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| FDG314P July 2000 FDG314P Digital FET, P-Channel General Description This P-Channel enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is tailored to minimize onstate resistance at low gate drive conditions. This device is designed especially for battery power applications such as notebook computers and cellular phones. This device has excellent on-state resistance even at gate drive voltages as low as 2.5 volts. Features * -0.65 A, -25 V. RDS(ON) = 1.1 @ VGS = -4.5 V RDS(ON) = 1.5 @ VGS = -2.7 V. * * * Very low gate drive requirements allowing direct operation in 3V cirucuits (VGS(th) <1.5 V). Gate-Source Zener for ESD ruggedness (>6 kV Human Body Model). Compact industry standard SC70-6 surface mount package. Applications * Power Management * Load switch * Signal switch D D S 1 6 2 5 SC70-6 D D G 3 4 Absolute Maximum Ratings Symbol V DSS V GSS ID PD T J, T stg ESD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed T A = 25C unless otherwise noted Parameter Ratings -25 (Note 1a) Units V V A W C kV 8 -0.65 -1.8 0.75 0.48 -55 to +150 6.0 Power Dissipation for Single Operation (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Electrostatic Discharge Rating MIL-STD-883D Human Body Model (100pf/1500 Ohm) Thermal Characteristics R JA Thermal Resistance, Junction-to-Ambient (Note 1b) 260 C/W Package Marking and Ordering Information Device Marking .14 Device FDG314P Reel Size 7'' Tape Width 8mm Quantity 3000 units 2000 Fairchild Semiconductor International FDG314P Rev.C FDG314P Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -20 V, VGS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -0.5 A VGS = -4.5 V, ID = -0.5 A @ 125C VGS = -2.7 V, ID = -0.25 A VGS = -4.5 V, VDS = -5 V VDS = -4.5 V, ID = -0.5 A Min Typ Max Units Off Characteristics BVDSS BVDSS TJ IDSS IGSS Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current (Note 2) -25 -19 -1 -100 V mV/C A nA On Characteristics VGS(th) VGS(th) TJ RDS(on) ID(on) gFS Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance -0.65 -0.72 2 0.77 1.08 1.06 -1.5 V mV/C 1.1 1.8 1.5 -1 0.9 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 63 34 10 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -6 V, ID = -0.5 A, VGS = -4.5 V, RGEN = 50 7 8 55 35 20 20 110 70 1.5 ns ns ns ns nC nC nC VDS = -5 V, ID = -0.25 A, VGS = -4.5 V 1.1 0.32 0.25 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = -0.42 A Voltage -0.42 (Note 2) A V -0.85 -1.2 Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 170C/W when mounted on a 1 in2 pad of 2oz copper. b) 260C/W when mounted on a minimum mounting pad. 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% FDG314P Rev.C FDG314P Typical Characteristics 2 -4.0V -ID, DRAIN CURRENT (A) 1.6 -3.5V -3.0V -2.7V 1.2 -2.5V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2 -VDS, DRAIN-SOURCE VOLTAGE (V) -ID, DRAIN CURRENT (A) VGS = -2.5V -2.7V -3.0V -3.5V -4.0V -4.5V 0.8 -2.0V 0.4 -1.5V 0 Figure 1. On-Region Characteristics. 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE RDS(ON), ON-RESISTANCE (OHM) ID = -0.5A VGS = -4.5V 1.4 2.8 2.4 2 1.6 Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. ID = -0.33A 1.2 TA = 125oC 1.2 0.8 0.4 0 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 125 150 1 2 3 4 5 TJ, JUNCTION TEMPERATURE (oC) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 1.2 25 C -ID, DRAIN CURRENT (A) 0.9 125 C o o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 10 -IS, REVERSE DRAIN CURRENT (A) VGS = 0V 1 TA = 125 C 0.1 25 C -55oC 0.01 o o VDS = -5V TA = -55 C o 0.6 0.3 0.001 0 0 1 2 3 4 -VGS, GATE TO SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDG314P Rev.C FDG314P Typical Characteristics 5 -VGS, GATE-SOURCE VOLTAGE (V) ID = -0.5A 4 (continued) 150 VDS = -5V -15V CAPACITANCE (pF) -10V 120 f = 1MHz VGS = 0 V 3 90 2 60 CISS 1 30 COSS CRSS 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 Qg, GATE CHARGE (nC) 0 0 5 10 15 20 25 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 10 30 Figure 8. Capacitance Characteristics. SINGLE PULSE -ID, DRAIN CURRENT (A) 1ms 10ms POWER (W) RDS(ON) LIMIT 1s 10s DC 0.1 VGS = -4.5V SINGLE PULSE o RJA = 260 C/W TA = 25 C 0.01 0.1 1 10 100 -VDS, DRAIN-SOURCE VOLTAGE (V) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 o 24 RJA= 260 C/W TA= 25 C o o 1 100ms 18 12 6 SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 D = 0.5 0.2 R JA (t) = r(t) * R JA R JA =260C/W P(pk) 0.1 0.05 0.1 0.05 0.01 0.02 Single Pulse t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.01 0.005 0.0001 0.001 0.01 0.1 t1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient themal response will change depending on the circuit board design. FDG314P Rev.C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) DISCLAIMER FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. F1 |
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