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LAPT
sAbsolute maximum ratings
Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC2921 160 160 5 15 4 150(Tc=25C) 150 -55 to +150
2SC2921
Application : Audio and General Purpose
(Ta=25C) 2SC2921 100max 100max 160min 50min 2.0max 60typ 200typ V MHz pF
20.0min 4.0max
Silicon NPN Epitaxial Planar Transistor (Complement to type 2SA1215)
(Ta=25C) Unit V V V A A W C C
sElectrical Characteristics
Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) fT COB Conditions VCB=160V VEB=5V IC=25mA VCE=4V, IC=5A IC=5A, IB=0.5A VCE=12V, IE=-2A VCB=10V, f=1MHz
External Dimensions MT-200
36.40.3 24.40.2 2-o3.20.1 9 7 21.40.3 2.1 6.00.2
Unit
A A
V
a b
2 3 1.05 +0.2 -0.1 5.450.1 B C E 5.450.1 0.65 +0.2 -0.1 3.0 +0.3 -0.1
hFE Rank O(50 to 100), P(70 to 140), Y(90 to 180)
sTypical Switching Characteristics (Common Emitter)
VCC (V) 60 RL () 12 IC (A) 5 VB2 (V) -5 IB1 (mA) 500 IB2 (mA) -500 ton (s) 0.2typ tstg (s) 1.5typ tf (s) 0.35typ
Weight : Approx 18.4g a. Type No. b. Lot No.
IC - VCE Characteristics (Typical)
0m
0 60 mA
500 mA
VCE( sa t ) - IB Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s a t)( V ) 3
I C - V BE Temperature Characteristics (Typical)
15 (V CE= 4V)
15
400
mA
300 mA
75
A
Collector Current I C( A)
10
15 0m A
2
Collector Current I C( A)
200m
A
10
10 0m A
p)
as
eT
5
1 I C =10A 5A 0
5
(C 5C
12
C
0
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
0
0
-30
25
1 Base-Emittor Voltage V B E( V)
C
IB=20mA
(Ca
se
Tem
50mA
em
p)
2
Collector-Emitter Voltage V C E( V)
Base Current I B( A)
(VCE=4V) 200 DC Cur rent Gain h F E D C Cur r ent Gai n h F E 200 125C 100
(V C E= 4V)
j - a( C/W)
h FE - IC Characteristics (Typical)
h FE - I C Temperature Characteristics (Typical)
j-a - t Characteristics
2
Transient Thermal Resistance
Typ
1
100
25C -30C
50
0.5
50
10 0.02
0.1
0.5
1
10 15
20 0.02
0.1
0.5
1
5
10 15
0.1
1
10
100 Time t(ms)
1000
2000
Collector Current I C( A)
Collector Current I C (A)
fT - IE Characteristics (Typical)
(V C E= 12V) 80
Safe Operating Area (Single Pulse)
40 160
10
P c - T a Derating
Cut- off F re quen cy f T( MH Z)
Typ
60 Collector Curre nt I C( A) 10
D C
m
s
M aximu m Power Di ssip ation P C( W)
120
W ith In fin
5
ite he
40
80
at si nk
20
1 Without Heatsink Natural Cooling
40
0.5 0 -0.02 0.3 -0.1 -1 -10 2
10
100
200
5 0
Without Heatsink 0 25 50 75 100 125 150
Emitter Current I E( A)
Collector-Emitter Voltage V C E( V)
Ambient Temperature Ta(C)
60

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