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| June 1999 USB10P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P -Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for battery power applications: load switching and power management, battery charging circuits, and DC/DC conversion. Features -4.5 A, -20 V. RDS(ON) = 0.045 @ VGS = -4.5 V RDS(ON) = 0.065 @ VGS = -2.5 V. Low gate charge (13nC typical). High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). SOT-23 SuperSOTTM-6 SuperSOTTM-8 SO-8 SOT-223 SOIC-16 S D D 1 6 2 G D D pin 1 TM 5 3 4 SuperSOT -6 Absolute Maximum Ratings Symbol Parameter TA = 25C unless otherwise note Ratings Units VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage - Continuous Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1a) -20 8 -4.5 -20 1.6 0.8 -55 to 150 V V A W TJ,TSTG RJA RJC Operating and Storage Temperature Range C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 30 C/W C/W (c)1999 Fairchild Semiconductor Corporation USB10P Rev.D ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25 C VDS = -16 V, VGS = 0 V TJ = 55 oC VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25 C VGS = -4.5 V, ID = -4.5 A TJ = 125 C VGS = -2.5 V, ID = -3.8 A o o o -20 -18 -1 -10 100 -100 V mV/oC A A nA nA BVDSS/TJ IDSS IGSSF IGSSR VGS(th) Gate - Body Leakage, Forward Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Gate Threshold VoltageTemp.Coefficient Static Drain-Source On-Resistance -0.4 -0.9 3 0.039 0.054 0.057 -1.5 V mV/oC VGS(th)/TJ RDS(ON) 0.045 0.072 0.065 ID(on) gFS Ciss Coss Crss tD(on) tr tD(off) tf Qg Qgs Qgd IS VSD On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn - On Delay Time Turn - On Rise Time Turn - Off Delay Time Turn - Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Continuous Source Diode Current Drain-Source Diode Forward Voltage Notes: VGS = -4.5 V, VDS = -5 V VDS = -10 V, ID = -4.5 A VDS = -10 V, VGS = 0 V, f = 1.0 MHz -20 6.5 1240 270 100 A S pF pF pF 16 27 65 50 19 ns ns ns ns nC nC nC -1.3 A V DYNAMIC CHARACTERISTICS SWITCHING CHARACTERISTICS (Note 2) VDD = -5 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 8 15 45 30 VDS = -10 V, ID = -4.5 A, VGS = -5 V 13 1.8 3 DRAIN-SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = -1.3 A (Note 2) -0.75 -1.2 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a. 78oC/W when mounted on a 1 in2 pad of 2oz Cu on FR-4 board. b. 156oC/W when mounted on a minimum pad. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%. USB10P Rev.D Typical Electrical Characteristics 20 - ID , DRAIN-SOURCE CURRENT (A) 1.6 -3.0V RDS(ON) , NORMALIZED 16 DRAIN-SOURCE ON-RESISTANCE VGS = -4.5V - 2.5V VGS = -2.5V 1.4 12 -3.0V 1.2 -3.5V -4.0V -4.5V 8 - 2.0V 1 4 0 0 1 2 3 4 5 -VDS , DRAIN-SOURCE VOLTAGE (V) 0.8 0 5 10 - ID, DRAIN CURRENT (A) 15 20 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 1.6 0.15 RDS(ON) , ON-RESISTANCE (OHM) R DS(ON) , NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.4 I D = -4.5A VGS = -4.5V I D = -2.0A 0.12 1.2 0.09 1 0.06 T = 125C A 0.8 0.03 25C 0.6 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 5 - VGS , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (C) Figure 3. On-Resistance Variation with Temperature. Figure 4. On Resistance Variation with Gate-to-Source Voltage. 20 VDS = -5V - ID , DRAIN CURRENT (A) 16 TJ = -55C 25C 125C - I S , REVERSE DRAIN CURRENT (A) 20 10 VGS = 0V TJ = 125C 1 12 25C -55C 0.1 8 4 0.01 0 0 0.8 1.6 2.4 3.2 4 -VGS , GATE TO SOURCE VOLTAGE (V) 0.001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLTAGE (V) Figure 5.Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDC638P Rev.D Typical Electrical Characteristics 5 -VGS , GATE-SOURCE VOLTAGE (V) 2500 I D = -4.5A 4 3 CAPACITANCE (pF) VDS = -5V -10V -15V C iss 1000 400 200 100 Coss 2 C rss f = 1 MHz VGS = 0 V 0.3 1 3 10 20 1 0 0 3 6 9 12 15 Q g , GATE CHARGE (nC) 50 0.1 -V DS , DRAIN TO SOURCE VOLTAGE (V) Figure 7. Gate Charge Characteristics. Figure 8. Capacitance Characteristics. 30 S( ) ON LIM IT 100 us 1m s 10m s POWER (W) 5 - I D , DRAIN CURRENT (A) 5 RD 4 1 0.3 10 0m s 1s SINGLE PULSE RJA =156C/W T = 25C A 3 0.05 V GS = -4.5V SINGLE PULSE RJA =156 C/W TA = 25C A 0.2 0.5 1 2 DC 2 1 0.01 0.1 5 10 30 0 0.01 0.1 1 10 100 300 - VDS , DRAIN-SOURCE VOLTAGE (V) SINGLE PULSE TIME (SEC) Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. 1 TRANSIENT THERMAL RESISTANCE r(t), NORMALIZED EFFECTIVE 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D = 0.5 0.2 0.1 0.05 0.02 0.01 Single Pulse P(pk) R JA (t) = r(t) * R JA R JA = 156C/W t1 t2 TJ - TA = P * R JA (t) Duty Cycle, D = t 1/ t 2 0.00001 0.0001 0.001 0.01 0.1 t 1, TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDC638P Rev.D TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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