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| USB10H February 1999 USB10H Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive SO-8 and TSSOP-8 packages are impractical. Features * -1.9 A, -20 V. RDS(on) = 0.170 @ VGS = -4.5 V RDS(on) = 0.250 @ VGS = -2.5 V * * * * Low gate charge (3 nC typical). Fast switching speed. High performance trench technology for extremely low RDS(ON). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick). Applications * Load switch * Battery protection * Power management D2 S1 D1 4 3 5 2 G2 SuperSOT TM -6 S2 G1 TA = 25C unless otherwise noted 6 1 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Parameter Ratings -20 8 (Note 1a) Units V V A W -1.9 -5 0.96 0.9 0.7 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, Tstg Operating and Storage Junction Temperature Range C Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 130 60 C/W C/W Package Outlines and Ordering Information Device Marking .306 Device USB10H Reel Size 7'' Tape Width 8mm Quantity 3000 units 1999 Fairchild Semiconductor Corporation USB10H Rev. C USB10H Electrical Characteristics Symbol Off Characteristics BVDSS BVDSS TJ IDSS IGSSF IGSSR TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage Current, Forward Gate-Body Leakage Current, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A, Referenced to 25C VDS = -16 V, VGS = 0 V VGS = 8 V, VDS = 0 V VGS = -8 V, VDS = 0 V Min -20 Typ Max Units V -18 -1 100 -100 mV/C A nA nA On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance VDS = VGS, ID = -250 A ID = -250 A, Referenced to 25C VGS = -4.5 V, ID = -1.9 A VGS = -4.5 V, ID = -1.9 A @125C VGS = -2.5 V, ID = -1.7 A VGS = -4.5 V, VDS =- 5 V VDS = -5 V, ID = -1.9 A -0.4 -0.9 3 0.127 0.182 0.194 -1.5 V mV/C 0.170 0.270 0.250 ID(on) gFS -5 4 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = -10 V, VGS = 0 V, f = 1.0 MHz 441 127 67 pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, ID = -1 A, VGS = -4.5 V, RGEN = 6 6 9 14 3 12 18 25 9 4.2 ns ns ns ns nC nC nC VDS = -10 V, ID = -1.9 A, VGS = -4.5 V 3 0.7 0.8 Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = -0.8 A (Note 2) -0.8 -0.8 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RJA is determined by the user's board design.Both devices are assumed to be operating and sharing the dissipated heat energy equally. a) 130 C/W when mounted on a 0.125 in2 pad of 2 oz. copper. b) 140 C/W when mounted on a 0.005 in2 pad of 2 oz. copper. c) 180 C/W when mounted on a 0.0015 in2 pad of 2 oz. copper. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width 300 s, Duty Cycle 2.0% USB10H Rev. C USB10H Typical Characteristics 12 - ID , DRAIN-SOURCE CURRENT (A) 2 -4.0V R D S(on), NORMALI ZED DRAIN-SOURCE O N-RESI STANCE V GS= -4.5V 10 8 6 -3.5V -3.0V 1.8 1.6 1.4 1.2 1 0.8 VGS = -2 .5 V -3.0V -3.5V -4.0V -4.5V -2.5V 4 2 0 0 1 2 3 4 5 -V DS , DRAIN-SOURCE VOLTAG E (V) -2.0V 0 2 4 6 8 10 - I D , DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.5 1.6 DRAIN-SOURCE O N-RESISTANCE 1.4 V GS= -4.5V R D S(ON) , ON-RESISTANCE (OHM) I D = -1.9A ID = -1A 0.4 R D S(ON), NORMALIZED 1.2 0.3 1 0.2 TJ = 1 25 C 0.8 0.1 25 C 0.6 -50 0 -25 0 25 50 75 100 125 150 T , JUNCTION T EM PERAT URE (C) J 1 2 3 4 5 -VGS , GATE TO SOURCE VOLT AG E (V) Figure 3. On-Resistance Variation with Temperature. 10 10 Figure 4. On-Resistance Variation with Gate-to-Source Voltage. TJ = -55C 25C 1 25C 8 -I S , REVERSE DRAIN CURRENT (A) VDS = -5V - ID , DRAIN CURRENT (A) VGS = 0V 1 T = 125C J 25 C -55C 6 0.1 4 0.01 2 0.001 0 0 1 2 3 4 5 -VGS , GATE T O SOURCE VOLTAGE (V) 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD , BODY DIODE FORWARD VOLT AGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. USB10H Rev. C USB10H Typical Characteristics 5 -VGS , GATE-SOURCE VOLT AGE (V) (continued) 1000 I D = -1.9A 4 VDS = -5V CAPACI TANCE (pF) -10V -15V Ciss 300 3 2 100 Coss f = 1 MHz VGS = 0 V Crss 1 0 0 1 2 Q g , GAT E CHARGE (nC) 3 4 30 0.1 0.2 0.5 1 2 5 10 20 -VDS , DRAIN T O SOURCE VOLTAGE (V) Figure 7. Gate-Charge Characteristics. 30 10 -ID, DRAIN CURRENT (A) 3 1 0.3 0.1 L N) S(O RD T IMI Figure 8. Capacitance Characteristics. 5 100 1m s 10m s us 4 POWER (W) SINGLE PULSE R JA=180C/W TA = 25C 3 10 0.03 0.01 0.1 V GS = -4.5V SINGLE PULSE R JA = 180C/W T A = 25C 0.2 1s DC 0m s 2 1 0.5 1 2 5 10 -V DS , DRAIN-SOURCE VOLTAGE (V) 20 50 0 0.01 0.1 1 10 SINGLE PULSE TIME (SEC) 100 300 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. TRANSIENT THERMAL RESISTANCE 1 0.5 D = 0.5 r(t), NORMALIZED EFFECTIVE 0.2 0.1 0.05 0.2 0.1 0.05 0.02 0.01 R JA (t) = r(t) * R JA R JA =180C/W P(pk) t1 t2 0.02 0.01 0.0001 Single Pulse TJ - T A = P * R JA (t) Duty Cycle, D = t 1 / t 2 0.001 0.01 0.1 t 1 , TIME (sec) 1 10 100 300 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient themal response will change depending on the circuit board design. USB10H Rev. C TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM CoolFETTM CROSSVOLTTM E2CMOSTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM GTOTM HiSeCTM DISCLAIMER ISOPLANARTM MICROWIRETM POPTM PowerTrench QFETTM QSTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. D |
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