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| x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.11 MAX x Ultra High-Speed Switching x SOP-8 Package x Two FET Devices built-in s General Description The XP134A02A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.11(Vgs=-4.5V) Rds(on)=0.2(Vgs=-2.5V) Ultra high-speed switching Operational Voltage: -2.5V High density mounting: SOP-8 u s Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 s Pin Assignment PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain SOP-8 (TOP VIEW) s Equivalent Circuit 1 2 3 4 P-Channel MOS FET (2 devices built-in) s Absolute Maximum Ratings PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -20 12 -4 -12 -4 2 150 -55~150 Ta=25: UNITS V V A A A W : : 8 7 6 5 Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-20V, Vgs=0V Vgs=12V, Vds=0V Id=-1mA, Vds=-10V Id=-2A, Vgs=-4.5V Id=-2A, Vgs=-2.5V Id=-2A, Vds=-10V If=-4A, Vgs=0V MIN TYP MAX -10 1 -0.5 0.08 0.14 5.5 -0.85 -1.1 -1.2 0.11 0.2 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 800 550 200 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-2A Vdd=-10V CONDITIONS MIN TYP 15 25 30 15 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS :/W Drain Current vs. Drain /Source Voltage Pulse Test, Ta=25: Drain Current vs. Gate/Source Voltage Pulse Test, Vds=-10V Drain Current:Id (A) Drain Current:Id (A) Drain/Source Voltage:Vds (V) Gate/Source Voltage:Vgs (V) Drain/Source On-State Resistance vs. Gate/Source Voltage Pulse Test, Ta=25: Drain/Source On-State Resistance vs. Drain Current Pulse Test, Ta=25: Drain /Source On-State Resistance :Rds (on) () Drain/Source On-State Resistance :Rds (on) () u Gate/Source Voltage:Vgs (V) Drain Current:Id (A) Drain/Source On-State Resistance vs. Ambient Temp. Pulse Test Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Vds=-10V, Id=-1mA Ambient Temperature:Topr (:) Gate/Source Cut Off Voltage Variance :Vgs (off) Variance (V) Drain/Source On-State Resistance :Rds (on) () Ambient Temperature:Topr (:) Drain/Source Voltage vs. Capacitance Vgs=0V, f=1MHz Switching Time vs. Drain Current Vgs=-5V, Vdd -10V, PW=10sec. duty 1% Capacitance:Ciss, Coss, Crss (pF) Drain/Source Voltage:Vds (V) Switching Time:t (ns) Drain Current:Id (A) Gate/Source Voltage vs. Gate Charge Vds=-10V, Id=-4A Reverse Drain Current vs. Source/Drain Voltage Pulse Test u Reverse Drain Current:Idr (A) Gate/Source Voltage:Vgs (V) Gate Charge:Qg (nc) Source/Drain Voltage:Vsd (V) Standardized Transition Thermal Resistance vs. Pulse Width Rth (ch-a)=62.5C/W, (Implemented on a glass epoxy PCB) Single Pulse Pulse Width:PW (sec) x P-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.11 MAX x Ultra High-Speed Switching x SOP-8 Package x Two FET Devices built-in s General Description The XP134A11A1SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. s Applications q Notebook PCs q Cellular and portable phones q On-board power supplies q Li-ion battery systems s Features Low on-state resistance: Rds(on)=0.065(Vgs=-10V) Rds(on)=0.11(Vgs=-4.5V) Ultra high-speed switching Operational Voltage: -4.5V High density mounting: SOP-8 u s Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 s Pin Assignment PIN NUMBER 1 2 3 4 5~6 7~8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain SOP-8 (TOP VIEW) s Equivalent Circuit 1 2 3 4 P-Channel MOS FET (2 devices built-in) s Absolute Maximum Ratings PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS -30 20 -4 -16 -4 2 150 -55~150 Ta=25: UNITS V V A A A W : : 8 7 6 5 Drain-Source Voltage Gate-Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature Note: When implemented on a glass epoxy PCB s Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance (note) Body Drain Diode Forward Voltage Note: Effective during pulse test. Ta=25: SYMBOL Idss Igss Vgs(off) Rds(on) Yfs Vf CONDITIONS Vds=-30V, Vgs=0V Vgs=20V, Vds=0V Id=-1mA, Vds=-10V Id=-2A, Vgs=-10V Id=-2A, Vgs=-4.5V Id=-2A, Vds=-10V If=-4A, Vgs=0V MIN TYP MAX -10 1 -1.0 0.055 0.09 5 -0.85 -1.1 -2.5 0.065 0.11 UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss CONDITIONS Vds=-10V, Vgs=0V f=1MHz MIN TYP 680 450 170 MAX Ta=25: UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td (on) tr td (off) tf Vgs=-5V, Id=-2A Vdd=-10V CONDITIONS MIN TYP 15 20 30 20 MAX Ta=25: UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance (channel-surroundings) SYMBOL Rth (ch-a) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS :/W Electrical Characteristics Drain Current Vs. Drain / Source Voltage Drain Current Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Drain Current u Drain / Source On-State Resistance Vs. Ambient Temp. Gate / Source Cut Off Voltage Variance Vs. Ambient Temp. Electrical Characteristics Drain / Source Voltage Vs. Capacitance Switching Time Vs. Drain Current Gate / Source Voltage Vs. Gate Charge Reverse Drain Current Vs. Source / Drain Voltage u Standardized Transition Thermal Resistance Vs. Pulse Width P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.075 (max) Ultra High-Speed Switching SOP - 8 Package 2 FET Devices Built-in Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP134A1275SR is a P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.075 ( Vgs = -4.5V ) Rds (on) = 0.115 ( Vgs = -2.5V ) Ultra high-speed switching Operational Voltage : -2.5V High density mounting : SOP - 8 Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Assignment PIN NUMBER 1 2 3 4 5-6 7-8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source Gate Source Gate Drain Drain u SOP - 8 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS - 20 + 12 - 4.5 - 18 - 4.5 2 150 - 55 to 150 UNITS V V A A A W O 1 2 8 7 3 4 P - Channel MOS FET ( 2 devices built-in ) 6 5 Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel Power Dissipation (note) Channel Temperature Storage Temperature C C O ( note ) : When implemented on a glass epoxy PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 20 , Vgs = 0V Vgs = 12 , Vds = 0V Id = -1mA , Vds = - 10V Id = - 2.5A , Vgs = - 4.5V Id = - 2.5A , Vgs = - 2.5V Id = - 2.5A , Vds = - 10V If = - 4.5A , Vgs = 0V - 0.5 0.062 0.095 7.5 - 0.85 - 1.1 MIN TYP MAX - 10 1 Ta=25 C UNITS O A A V S V - 1.2 0.075 0.115 Dynamic characteristics PARAMETER SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 770 440 190 MAX Ta=25 C UNITS O u Input Capacitance Output Capacitance Feedback Capacitance pF pF pF Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 2.5A Vdd = - 10V CONDITIONS MIN TYP 15 20 55 30 MAX Ta=25 C UNITS O ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W Electrical Characteristics Drain Current Vs. Drain / Source Voltage Drain Current Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Gate / Source Voltage Drain / Source On-State Resistance Vs. Drain Current u Drain / Source On-State Resistance Vs. Ambient Temp. Gate / Source Cut Off Voltage Variance Vs. Ambient Temp. Electrical Characteristics Drain / Source Voltage Vs. Capacitance Switching Time Vs. Drain Current Gate / Source Voltage Vs. Gate Charge Reverse Drain Current Vs. Source / Drain Voltage u Standardized Transition Thermal Resistance Vs. Pulse Width N-Channel/P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.045 max (Nch) 0.110 max (Pch) Ultra High-Speed Switching SOP - 8 Package Two FET Devices Built-in Applications Notebook PCs Cellular and portable phones On - board power supplies General Description The XP135A1145SR is a N-Channel/P-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Two FET devices are built-into the one package. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. The small SOP-8 package makes high density mounting possible. Features Low on-state resistance (Nch) : Rds (on) = 0.033 ( Vgs = 10V ) Rds (on) = 0.045 ( Vgs = 4.5V ) Low on-state resistance (Pch) : Rds (on) = 0.065 ( Vgs = -10V ) Rds (on) = 0.110 ( Vgs = -4.5V ) Ultra high-speed switching Operational Voltage : 4.5V (Nch) : -4.5V (Pch) High density mounting : SOP - 8 Pin Configuration S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 Pin Assignment PIN NUMBER 1 2 3 4 5-6 7-8 PIN NAME S1 G1 S2 G2 D2 D1 FUNCTION Source (Nch) Gate (Nch) Source (Pch) Gate (Pch) Drain (Pch) Drain (Nch) u SOP - 8 Top View Equivalent Circuit Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS Nch 30 20 6 20 6 2 150 - 55 to 150 Pch - 30 20 -4 - 16 -4 UNITS V V A A A W O N-Channel/P - Channel MOS FET ( 2 devices built-in ) Power Dissipation (note) Channel Temperature Storage Temperature C C O ( note ) : When implemented on a glass epoxy PCB Electrical Characteristics DC characteristics (P-Channel Power MOS FET) PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = - 30 , Vgs = 0V Vgs = 20 , Vds = 0V Id = -1mA , Vds = -10V Id = - 2A , Vgs = -10V Id = - 2A , Vgs = - 4.5V Id = - 2A , Vds = - 10V If = - 4A , Vgs = 0V -1 0.055 0.09 5 - 0.85 - 1.1 MIN TYP MAX - 10 1 Ta=25 C UNITS O A A V S V - 2.5 0.065 0.11 Dynamic characteristics PARAMETER SYMBOL Ciss Coss Crss Vds = - 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 680 450 170 MAX Ta=25 C UNITS O u Input Capacitance Output Capacitance Feedback Capacitance pF pF pF Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = - 5V , Id = - 2A Vdd = - 10V CONDITIONS MIN TYP 15 20 30 20 MAX Ta=25 C UNITS O ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W Electrical Characteristics DC characteristics (N-Channel Power MOS FET) PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance ( note ) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. SYMBOL Idss Igss Vgs (off ) Rds ( on ) | Yfs | Vf CONDITIONS Vds = 30 , Vgs = 0V Vgs = 20 , Vds = 0V Id = 1mA , Vds = 10V Id = 3A , Vgs = 10V Id = 3A , Vgs = 4.5V Id = 3A , Vds = 10V If = 6A , Vgs = 0V 1.0 0.026 0.035 12 0.85 1.1 MIN TYP MAX 10 1 Ta=25 C UNITS O A A V S V 2.5 0.033 0.045 Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 620 350 120 MAX Ta=25 C UNITS O pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 3A Vdd = 10V CONDITIONS MIN TYP 15 20 30 10 MAX Ta=25 C UNITS O ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a glass epoxy resin PCB MIN TYP 62.5 MAX UNITS O C/W Electrical Characteristics (N-channel Power MOS FET) Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Vgs=4.5V 10V Drain/Source On-State Resistance vs. Ambient Temp Gate/Source Cut Off Voltage Variance vs. Ambient Temp. Id=7A Vgs=4.5V 4A 4A, 7A 10V Electrical Characteristics (N-channel Power MOS FET) Capacitance vs. Drain/Source Voltage Switching Time vs. Drain Current tf td(off) tr td(on) Gate/Source Voltage vs. Gate Charge Reverse Drain Current vs. Source/Drain Voltage u Standardized Transition Thermal Resistance vs. Pulse Width Single Pulse |
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