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| T0930 SiGe Power Amplifier for CW Applications Description The T0930 is a monolithic integrated power amplifier IC. The device is manufactured in TEMIC Semiconductors' Silicon-Germanium (SiGe) technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter readers and ISM phones. With a single supply voltage operation of + 2.4 to 3.4 V and a neglectable leakage current in power-down mode, the pager amplifier needs less external components and thus helps to reduce system costs. It is suited for operation in CW mode. Features D Up to 33 dBm output power in CW mode D Power Added Efficiency (PAE) 47% D Single supply operation at 2.4 V (1 W) or 3.2 V (2 W) no negative voltage necessary D Current consumption in power-down mode 10 A, no external power supply switch required D Power ramp control D Simple input and output matching D Simple output matching for maximum flexibility D SMD package (PSSOP16 with heat slug) Block Diagram VCC1 5 1 VCC2 2 3 GND 4 10 16 11 RFin (900 MHz) 8 VCTL VCC,CTL GND 9 7 6 12 Match Match Match 13 14 15 Harmonic tuning RFout/VCC3 (900 MHz) Control Figure 1. Block diagram Ordering Information Extended Type Number T0930-TJT T0930-TJQ Package PSSOP16 PSSOP16 Remarks Tube Taped and reeled Rev. A1, 05-May-00 1 (9) T0930 Pin Description VCC2 1 16 15 14 13 T0930 12 11 10 9 Figure 2. Pinning GND RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 GND VCC,CTL VCC2 2 VCC2 GND VCC1 RFin GND VCTL 3 4 5 6 7 8 Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VCC2 VCC2 VCC2 GND VCC1 RFin GND VCTL VCC,CTL GND RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 RFout/VCC3 GND Function Supply voltage 2 Supply voltage 2 Supply voltage 2 Ground Supply voltage 1 RF input Ground (control) Control input Supply voltage for control Ground (optional) RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / supply voltage 3 RF output / harmonic tuning Ground Absolute Maximum Ratings All voltages are referred to GND Parameters Supply voltage VCC @ VCTL = 1.7 V Pin 5 Pin 1, 2, 3 Pins 11, 12, 13, 14 and 15 Pin 9 Input power Gain control voltage *) Duty cycle for operation Junction temperature Storage temperature Pin 6 Pin 8 Symbol VCC1 VCC2 VCC3 VCC, CTL Pin VCTL Tj Tstg 0 Min. Typ. Max. 4.0 4.0 4.0 4.0 12 2 100 + 150 +150 Unit V V V V dBm V % C C - 40 Operation Range All voltages are referred to GND Parameters Supply voltage VCC *) 1 W application Supply voltage VCC *) 2 W application Ambient temperature Input frequency Symbol VCC1, VCC2 VCC3, VCC, CTL VCC1, VCC2 VCC3, VCC, CTL Tamb fin Min. 1.8 2.6 - 25 900 Typ. 2.4 3.2 Max. 3.0 3.6 + 85 Unit V V C MHz Note: *) The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up. 2 (9) Rev. A1, 05-May-00 T0930 Electrical Characteristics for 1 Watt Application VCC = VCC1, ... , VCC3, VCC, CTL = + 2.4 V, VCTL = 1.7 V, Tamb = + 25C, 50- input and 50- external output match Parameters Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Test Conditions / Pins Symbol VCC I I Min. 1.8 Typ. 2.4 0.9 Max. 3.0 Unit V A mA Pout = 30 dBm, PAE = 47% VCTL 0.2 V 10 fin Zi Pin Pin = 0 to 12 dBm, Pout = 30 dBm Zo Pin = 5 dBm, RL = RG = 50 VCC = 2.4 V, Tamb = +25C VCC = 1.8 V, Tamb = +25C VCTL = 0.3 V VCC = 2.4 V, Pout = 27 dBm VCC = 2.4 V, Pout = 30 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 30 dBm, all phases 880 900 50 5 935 12 2:1 MHz W dBm 50 W Pout Pout PAE PAE VSWR VSWR 2fo 3fo Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current 30 27 - 20 40 47 10 : 1 10 : 1 -35 -35 -73 -85 50 -70 -82 0.5 dBm dBm dBm % % dBc dBc dBm dBm ms dB Pout = 30 dBm, RBW = 100 kHz Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 150 50 0.3 2.0 200 dB/V dB V mA Note: *) with external matching (see application circuit) Rev. A1, 05-May-00 3 (9) T0930 Electrical Characteristics for 2 Watt Application VCC = VCC1, ... , VCC3, VCC, CTL = + 3.2 V, VCTL = 1.9 V, Tamb = + 25C, 50- input and 50- external output match Parameters Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Test Conditions / Pins Symbol VCC I I Min. 2.6 Typ. 3.2 1.33 Max. 3.6 Unit V A mA Pout = 33 dBm, PAE = 47% VCTL 0.2 V 10 fin Zi Pin Pin = 0 to 12 dBm, Pout = 30 dBm Zo Pin = 5 dBm, RL = RG = 50 VCC = 3.2 V, Tamb = +25C VCC = 2.2 V, Tamb = +25C VCTL = 0.3 V VCC = 3.2 V, Pout = 27 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 33 dBm, all phases 880 900 50 5 935 12 2:1 MHz W dBm 50 W Pout Pout PAE VSWR VSWR 2fo 3fo Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current 33 30 - 20 47 10 : 1 10 : 1 -35 -35 -73 -85 50 -70 -82 0.5 dBm dBm dBm % dBc dBc dBm dBm ms dB Pout = 33 dBm, RBW = 100 kHz Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 150 50 0.3 2.0 200 dB/V dB V mA Note: *) with external matching (see application circuit) 4 (9) Rev. A1, 05-May-00 T0930 50 PAE 45 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 1.8 Pout 2.0 2.2 2.4 2.6 2.8 VCC [V] 3.8 3.2 3.4 3.6 Figure 3. Pout and PAE versus VCC (1 W application) 50 PAE 40 Pout Pout [dBm], PAE [%] 30 20 10 0 -10 -20 1.00 1.25 1.50 Vramp [V] 1.75 2.00 Figure 4. Pout and PAE versus Vramp (1 W application) Rev. A1, 05-May-00 5 (9) T0930 50 PAE 45 40 35 Pout [dBm], PAE [%] Pout 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VCC [V] 3.2 3.4 3.6 3.8 4.0 Figure 5. Pout and PAE versus VCC (2 W application) 50 40 30 20 10 0 -10 -20 -30 -40 0.50 PAE Pout Pout [dBm], PAE [%] 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 Vramp [V] 1.40 1.50 1.60 1.70 1.80 1.90 2.00 Figure 6. Pout and PAE versus Vramp (2 W application) 6 (9) Rev. A1, 05-May-00 T0930 Application Circuit VCC C1 220nF C2 220nF C3 39pF AVX T3 15pF AVX C4 C5 RFIN 900 MHz 12pF L1 3.3nH VCTL T5 7 10 4 13 12 11 C13 220nF T1 T2 2 3 15 1 16 C12 220nF C11 100pF T6 1/4 wavelength line T7 C9 8.2pF AVX harmonic tuning T8 14 T9 C10 RFOUT 56pF T4 5 6 Control C6 22pF 8 9 VCC,CTL C7 22pF C8 1nF Microstrip line : FR4 ; Epsilon(r) : 4.3 ; metal Cu : 35 um distance 1. layer - rf ground : 0.5 mm l/mm 20.5 1.3 14.8 14.2 2.5 43.1 6.0 10.0 4.0 w/mm 1.0 1.0 0.5 0.5 1.0 0.5 1.25 0.5 1.25 Figure 7. Application circuit GSM pager (900 MHz) T1 T2 T3 T4 T5 T6 T7 T8 T9 x x x x x x x x x Rev. A1, 05-May-00 7 (9) T0930 Package Information Package PSSOP16 Dimensions in mm 4.98 4.80 1.60 1.45 0.25 0.64 4.48 16 9 0.10 0.00 3.91 6.02 0.2 2.21 1.80 technical drawings according to DIN specifications 1 3.12 2.72 8 8 (9) Rev. A1, 05-May-00 T0930 Ozone Depleting Substances Policy Statement It is the policy of TEMIC Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. TEMIC Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. TEMIC Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use TEMIC Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify TEMIC Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.temic-semi.com TEMIC Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423 Rev. A1, 05-May-00 9 (9) |
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