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T0930 SiGe Power Amplifier for CW Applications Description The T0930 is a monolithic integrated power amplifier IC. The device is manufactured in Atmel Wireless & Microcontrollers' Silicon-Germanium (SiGe) technology and has been designed for use in 900-MHz two-way pagers, PDAs, meter readers and ISM phones. With a single supply voltage operation of + 2.4 to 3.4 V and a neglectable leakage current in power-down mode, the pager amplifier needs less external components and thus helps to reduce system costs. It is suited for operation in CW mode. Electrostatic sensitive device. Observe precautions for handling. Features D Up to 33 dBm output power in CW mode D Power Added Efficiency (PAE) 47% D Single supply operation at 2.4 V (1 W) or 3.2 V (2 W) no negative voltage necessary D Current consumption in power-down mode 10 A, no external power supply switch required D Power ramp control D Simple input and output matching D Simple output matching for maximum flexibility D SMD package (PSSOP16 with heat slug) Block Diagram VCC1 5 1 VCC2 2 3 GND 4 10 16 11 RFin (900 MHz) 8 9 7 6 12 Match Match Match 13 14 15 VCTL VCC,CTL GND Harmonic tuning RFout/VCC3 (900 MHz) Control Figure 1. Block diagram Ordering Information Extended Type Number T0930-TJT T0930-TJQ Package PSSOP16 PSSOP16 Tube Taped and reeled Remarks Rev. A2, 12-Sep-00 1 (8) T0930 Pin Description Pin 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 Symbol VCC2 VCC2 VCC2 GND VCC1 RFin GND VCTL VCC,CTL GND Function Supply voltage 2 Supply voltage 2 Supply voltage 2 Ground Supply voltage 1 RF input Ground (control) Control input Supply voltage for control Ground (optional) RFin GND VCTL 6 7 8 11 10 9 RFout/VCC3 GND VCC,CTL VCC1 5 T0930 12 RFout/VCC3 VCC2 2 VCC2 GND 3 4 15 14 13 RFout/VCC3 RFout/VCC3 RFout/VCC3 VCC2 1 16 GND RFout/VCC3 RF output / supply voltage 3 RFout/VCC3 RF output / supply voltage 3 RFout/VCC3 RF output / supply voltage 3 RFout/VCC3 RF output / supply voltage 3 RFout/VCC3 RF output / harmonic tuning GND Ground Figure 2. Pinning Absolute Maximum Ratings All voltages are referred to GND Parameter Supply voltage VCC @ VCTL = 1.7 V Pin 5 Pin 1, 2, 3 Pins 11, 12, 13, 14 and 15 Pin 9 Pin 6 Pin 8 Symbol VCC1 VCC2 VCC3 VCC, CTL Pin VCTL Tj Tstg - 40 0 Min. Max. 4.0 4.0 4.0 4.0 12 2 100 + 150 +150 Unit V V V V dBm V % C C Input power Gain control voltage *) Duty cycle for operation Junction temperature Storage temperature Operating Range All voltages are referred to GND Parameter Supply voltage VCC *) 1 W application Supply voltage VCC *) 2 W application Ambient temperature Input frequency Symbol VCC1, VCC2, VCC3, VCC, CTL VCC1, VCC2, VCC3, VCC, CTL Tamb fin Min. 1.8 2.6 - 25 900 Typ. 2.4 3.2 Max. 3.0 3.6 + 85 Unit V V C MHz Note: *) The gain control voltage should be always 0.2 V below the supply voltage. RF should be applied before ramp-up. 2 (8) Rev. A2, 12-Sep-00 T0930 Electrical Characteristics for 1 Watt Application VCC = VCC1, ... , VCC3, VCC, CTL = + 2.4 V, VCTL = 1.7 V, Tamb = + 25C, 50- input and 50- external output match Parameter Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Pin = 5 dBm, RL = RG = 50 VCC = 2.4 V, Tamb = +25C VCC = 1.8 V, Tamb = +25C VCTL = 0.3 V VCC = 2.4 V, Pout = 27 dBm VCC = 2.4 V, Pout = 30 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 30 dBm, all phases PAE PAE VSWR VSWR 2fo 3fo Pout = 30 dBm, RBW = 100 kHz Pin = 0 to 10 dBm, VCTL 0.2 V (power down) Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V ICTL 50 0.3 2.0 200 50 -73 -85 Zo 50 W Pin = 0 to 12 dBm, Pout = 30 dBm Pout = 30 dBm, PAE = 47% VCTL 0.2 V VCC I I 1.8 2.4 0.9 10 3.0 V A mA Test Conditions / Pins Symbol Min. Typ. Max. Unit fin Zi Pin 880 900 50 5 935 12 2:1 MHz W dBm Pout Pout 30 27 - 20 40 47 10 : 1 10 : 1 -35 -35 -70 -82 0.5 dBm dBm dBm % % Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current dBc dBc dBm dBm ms dB 150 dB/V dB V mA Note: *) with external matching (see application circuit) Rev. A2, 12-Sep-00 3 (8) T0930 Electrical Characteristics for 2 Watt Application VCC = VCC1, ... , VCC3, VCC, CTL = + 3.2 V, VCTL = 1.9 V, Tamb = + 25C, 50- input and 50- external output match Parameter Power supply Supply voltage Current consumption: active mode Current consumption (leakage current) in power-down mode RF input Frequency range Input impedance *) Input power Input VSWR *) RF output Output impedance *) Output power: normal conditions Minimum output power Power-added efficiency Stability Load mismatch (stable, no damage) Second harmonic distortion Third harmonic distortion Noise power f = 925 to 935 MHz f 935 MHz Rise and fall time Isolation between input and output Power control Control curve Power control range Control voltage range Control current Pin = 0 to 10 dBm, VCTL = 0 to 2.0 V Pout 25 dBm VCTL = 0.3 to 2.0 V VCTL ICTL 50 0.3 2.0 200 150 dB/V dB V mA Pin = 0 to 10 dBm, VCTL 0.2 V (power down) 50 Pout = 33 dBm, RBW = 100 kHz Pin = 5 dBm, RL = RG = 50 VCC = 3.2 V, Tamb = +25C VCC = 2.2 V, Tamb = +25C VCTL = 0.3 V VCC = 3.2 V, Pout = 27 dBm Temp = -25 to + 85 C, no spurious >= -60 dBc Pout = 33 dBm, all phases PAE VSWR VSWR 2fo 3fo -73 -85 Zo Pout Pout 50 33 30 - 20 47 10 : 1 10 : 1 -35 -35 -70 -82 0.5 dBc dBc dBm dBm ms dB W dBm dBm dBm % Pin = 0 to 12 dBm, Pout = 30 dBm fin Zi Pin 880 900 50 5 12 2:1 935 MHz W dBm Pout = 33 dBm, PAE = 47% VCTL 0.2 V VCC I I 2.6 3.2 1.33 10 3.6 V A mA Test Conditions / Pins Symbol Min. Typ. Max. Unit Note: *) with external matching (see application circuit) 4 (8) Rev. A2, 12-Sep-00 T0930 50 PAE 45 40 35 Pout [dBm], PAE [%] 30 25 20 15 10 5 0 1.8 Pout 2.0 2.2 2.4 2.6 2.8 VCC [V] 3.8 3.2 3.4 3.6 Figure 3. Pout and PAE versus VCC (1 W application) 50 PAE 40 Pout Pout [dBm], PAE [%] 30 20 10 0 -10 -20 1.00 1.25 1.50 Vramp [V] 1.75 2.00 Figure 4. Pout and PAE versus Vramp (1 W application) Rev. A2, 12-Sep-00 5 (8) T0930 50 PAE 45 40 35 Pout [dBm], PAE [%] Pout 30 25 20 15 10 5 0 1.8 2.0 2.2 2.4 2.6 2.8 3.0 VCC [V] 3.2 3.4 3.6 3.8 4.0 Figure 5. Pout and PAE versus VCC (2 W application) 50 40 30 20 10 0 -10 -20 -30 -40 0.50 PAE Pout Pout [dBm], PAE [%] 0.60 0.70 0.80 0.90 1.00 1.10 1.20 1.30 Vramp [V] 1.40 1.50 1.60 1.70 1.80 1.90 2.00 Figure 6. Pout and PAE versus Vramp (2 W application) 6 (8) Rev. A2, 12-Sep-00 T0930 Application Circuit VCC C1 220nF C2 220nF C3 39pF AVX T3 15pF AVX C4 C5 RFIN 900 MHz 12pF L1 3.3nH VCTL T5 7 10 4 13 12 11 C13 220nF T1 T2 2 3 15 1 16 C12 220nF C11 100pF T6 1/4 wavelength line T7 C9 8.2pF AVX harmonic tuning T8 14 T9 C10 RFOUT 56pF T4 5 6 Control C6 22pF 8 9 VCC,CTL C7 22pF C8 1nF Microstrip line : FR4 ; Epsilon(r) : 4.3 ; metal Cu : 35 um distance 1. layer - rf ground : 0.5 mm l/mm l/mm w/mm T1 20.5 x 1.0 T6 43.1 T2 1.3 x 1.0 T7 6.0 T3 14.8 x 0.5 T8 10.0 T4 14.2 x 0.5 T9 4.0 T5 2.5 x 1.0 x x x x w/mm 0.5 1.25 0.5 1.25 Figure 7. Application circuit GSM pager (900 MHz) Package Information Package PSSOP16 Dimensions in mm 4.98 4.80 1.60 1.45 0.25 0.64 4.48 16 9 0.10 0.00 3.91 6.02 0.2 2.21 1.80 technical drawings according to DIN specifications 1 3.12 2.72 8 Rev. A2, 12-Sep-00 7 (8) T0930 Ozone Depleting Substances Policy Statement It is the policy of Atmel Germany GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Atmel Germany GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Atmel Germany GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. 1. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Atmel Wireless & Microcontrollers products for any unintended or unauthorized application, the buyer shall indemnify Atmel Wireless & Microcontrollers against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Data sheets can also be retrieved from the Internet: http://www.atmel-wm.com Atmel Germany GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2594, Fax number: 49 (0)7131 67 2423 8 (8) Rev. A2, 12-Sep-00 |
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