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 Preliminary Data Sheet
* FEATURES DC - 23 GHz Frequency Bandwidth 13 dB Small Signal Gain 4 Vpp Output Voltage -12 dB input/output return loss Chip Size: 1.18 x 1.50 mm
FMA500
OC-192 MODULATOR PRE-DRIVER AMPLIFIER
*
DESCRIPTION AND APPLICATIONS The Filtronic Solid State FMA500 is a high-gain pre-driver pHEMT amplifier that operates from DC to 23 GHz. This five-stage travelling wave amplifier provides 13 dB nominal small signal gain and 4 V peak-to-peak NRZ output at bit rates to 12.5 Gb/sec. The FMA500 is designed as the pre-driver stage for OC-192 MZ modulator driver amplifiers for optical data communication applications, and can be cascaded with the FMA501 Driver MMIC to provide 30 dB of voltage gain. The FMA500 can also be used as an EA driver amplifier or as a transimpedance amplifier (TIA) for photoreceiver applications.
*
ELECTRICAL SPECIFICATIONS @ TAmbient = 25C
(VDD = +4.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50) Parameter 3dB Operating Bandwidth Small Signal Gain Operating Current Input Return Loss Output Return Loss Gain Control Group Delay Variation Rise/Fall time, 20%-80% Output Voltage at Saturation Saturated Output Power Symbol BW S21 IOP S11 S22 GC grp R/F VOUT PSAT 10Gb/sec, NRZ, VIN = 2Vpp VIN = 2Vpp VGC = 0V to 1.5V Over Bandwidth Test Conditions Min Typ 23 13 100 -12 -12 6 20 20 4 20 30 Max Units GHz dB mA dB dB dB ps ps V dBm
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 3/15/02 Email: sales@filss.com
Preliminary Data Sheet
* ABSOLUTE MAXIMUM RATINGS
Parameter Drain Voltage Operating Current RF Input Power Channel Operating Temperature Storage Temperature Maximum Assembly Temperature (1 min. max.) Symbol VDD IOP PIN TCH TSTG TMAX Test Conditions TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C TAmbient = 22 3 C -- -- -65 Min
FMA500
OC-192 MODULATOR PRE-DRIVER AMPLIFIER
Max 5.0 150 12 150 165 300
Units V mA dBm C C C
Notes: * Operating conditions that exceed the Absolute Maximum Ratings could result in permanent damage to the device. * Recommended Continuous Operating Limits should be observed for reliable device operation. * This PHEMT is susceptible to damage from Electrostatic Discharge. Proper precautions should be used when handling these
devices.
*
MEASURED PERFORMANCE: 10 Gb/s NRZ Eye Test
(VDD = +4.0V, VGG = -3.0V; VGC = +1.5V; ZIN = ZOUT = 50)
Phone: (408) 988-1845 Fax: (408) 970-9950
http:// www.filss.com
Revised: 3/15/02 Email: sales@filss.com
Preliminary Data Sheet
* ASSEMBLY DIAGRAM
FMA500
OC-192 MODULATOR PRE-DRIVER AMPLIFIER
GND
Chip capacitor: 100nF VDD=3~5V
Inductor for drain = 300uH
Gate bias: VGG = -3.0 V
Gain control: VGC = +1.5 V
Notes: * Apply VGG first, then VGC and VDD. * Disconnect VGC first, then VDD and VGG when turning off. * Recommended lead bond technique is thermocompression wedge bonding with 0.001" (25m) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240C, heated tool (150-160C) is recommended. Ultrasonic bonding is not recommended. * The recommended die attach is Ablebond silver epoxy, the stabilize bake temperature is set at 150C for 45 minutes. * Bond on bond or stitch bonds acceptable. * Conductor over conductor acceptable. Conductors must not short.
Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/15/02 Email: sales@filss.com
Preliminary Data Sheet
* MECHANICAL OUTLINE
FMA500
OC-192 MODULATOR PRE-DRIVER AMPLIFIER
Notes: * All units are in microns (m). * All pads are 100 X 100 m2.
*
HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A (0-500 V). Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
All information and specifications are subject to change without notice.
Phone: (408) 988-1845 Fax: (408) 970-9950 http:// www.filss.com Revised: 3/15/02 Email: sales@filss.com


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