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| DTC125TUA / DTC125TKA / DTC125TSA Transistors Digital transistor (built-in resistor) DTC125TUA / DTC125TKA / DTC125TSA Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. 2) The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input, and parasitic effects are almost completely eliminated. 3) Only the on / off conditions need to be set for operation, making device design easy. 4) Higher mounting densities can be achieved. External dimensions (Unit : mm) 0.65 0.65 0.7 DTC125TUA 0.3 (3) (1) 1.25 2.1 0.15 0.2 (2) 0.1 to 0.4 0 to 0.1 Each lead has same dimensions 0.9 1.3 2.0 ROHM : UMT3 EIAJ : SC-70 (1) Emitter (2) Base (3) Collector (1) DTC125TKA 0.4 (3) B R1 C 0.15 1.6 2.8 0.3 to 0.6 0 to 0.1 E : Emitter C : Collector B : Base Each lead has same dimensions 0.8 1.1 E (2) Circuit schematic 0.95 0.95 1.9 2.9 ROHM : SMT3 EIAJ : SC-59 (1) Emitter (2) Base (3) Collector DTC125TSA 3 4 2 (15Min.) 3Min. 0.45 2.5 5 (1) (2) (3) 0.5 0.45 Taping specifications ROHM : SPT EIAJ : SC-72 (1) Emitter (2) Collector (3) Base Absolute maximum ratings (Ta=25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation DTC125TUA / DTC125TKA DTC125TSA Symbol VCBO VCEO VEBO IC Pc Tj Tstg Limits 50 50 5 100 200 300 150 -55 to +150 Unit V V V mA mW C C Junction temperature Storage temperature Rev.A 1/2 DTC125TUA / DTC125TKA / DTC125TSA Transistors Package, marking, and packaging specifications Part No. Package Marking Packaging code Basic ordering unit (pieces) DTC125TUA UMT3 0A T106 3000 DTC125TKA SMT3 0A T146 3000 DTC125TSA SPT - TP 5000 Electrical characteristics (Ta=25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Input resistance Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R1 fT Min. 50 50 5 - - - 100 140 - Typ. - - - - - - 250 200 250 Max. - - - 0.5 0.5 0.3 600 260 - Unit V V V A A V - k MHz IC=50A IC=1mA IE=50A VCB=50V VEB=4V IC=0.5mA , IB=0.05mA IC=1mA , VCE=5V - VCE=10V , IE= -5mA , f=100MHz Conditions Transition frequency Transition frequency of the device. Electrical characteristic curves VCE=5V COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 1k 500 1 500m 200m 100m 50m 20m 10m 5m 2m 1m 10 20 50 100 200 500 1m 2m 5m 10m Ta= -40C Ta=100C Ta=25C Ta=100C IC/IB=10/1 DC CURRENT GAIN : hFE 200 100 50 20 10 5 2 1 10 20 50 100 200 500 1m 2m 5m 10m Ta=25C Ta= -40C COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 DC current gain vs. Collector current Fig.2 Collector-Emitter saturation voltage vs. Collector current Rev.A 2/2 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0 |
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