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| Semiconductor DN200 NPN Silicon Transistor Features * Extremely low collector-to-emitter saturation voltage ( VCE(SAT)= 0.3V Typ. @IC /IB =1A/50mA) * Suitable for low voltage large current drivers * Complementary pair with DP200 * Switching Application Ordering Information Type NO. DN200 Marking DN200 Package Code TO-92 Outline Dimensions unit : mm PIN Connections 1. Emitter 2. Collector 3. Base KST-9085-000 1 DN200 Absolute maximum ratings Characteristic Collector-Base voltage Collector-Emitter voltage Emitter-Base voltage Collector current Collector dissipation Junction temperature Storage temperature (Ta=25 C) Symbol VCBO VCEO VEBO IC PC Tj T stg Ratings 15 12 5 2 625 150 -55~150 Unit V V V A mW C C Electrical Characteristics Characteristic Collector-Base breakdown voltage Collector-Emitter breakdown voltage Emitter-Base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-Emitter saturation voltage Base-Emitter saturation voltage Transition frequency Collector output capacitance (Ta=25 C) Symbol BVCBO BVCEO BVEBO ICBO IEBO h FE1 h FE2 VCE(sat)1 VCE(sat)2 VBE(sat) fT C ob Test Condition IC=50A, I E =0 IC=1mA, IB =0 IE =50A, IC =0 VCB=12V, IE =0 VEB =5V, I C=0 VCE=1V, IC =100mA VCE=1V, IC =2A IC=1A, I B=50mA IC=2A, I B=50mA IC=1A, I B=50mA VCE=5V, IC =50mA VCB=10V, IE =0, f=1MHz Min. 15 12 5 200 40 - Typ. 260 5 Max. 0.1 0.1 450 0.3 0.5 1.2 - Unit V V V A A V V MHz pF KST-9085-000 2 DN200 Electrical Characteristic Curves Fig. 1 PC - Ta Fig. 2 IC - VBE Fig. 3 hFE- IC Fig. 4 VCE(sat)-IC KST-9085-000 3 |
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