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| NPN SILICON PLANAR MEDIUM POWER HIGH VOLTAGE TRANSISTOR ISSUE 2 MARCH 1994 FEATURES * 300 Volt VCEO * 0.5 Amp continuous current * Ptot= 1 Watt ZTX457 C B E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg E-Line TO92 Compatible VALUE 300 300 5 1 500 1 -55 to +200 UNIT V V V A mA W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn On Voltage SYMBOL V(BR)CBO VCEO(sus) V(BR)EBO ICBO MIN. 300 300 5 100 10 100 0.3 1 1 50 50 25 75 TYP. MAX. UNIT V V V nA CONDITIONS. IC=100A, IE=0 IC=10mA, IB=0* IE=100A VCB=200V VCB=200V, Tamb=100C VEB=4V IC=100mA, IB=10mA* IC=100mA, IB=10mA* IC=100mA, VCE=10V* IC=10mA, VCE=10V* IC=50mA, VCE=10V* IC=100mA, VCE=10V* MHz IC=50mA, VCE=10V f=20MHz A Emitter Cut-Off Current IEBO VCE(sat) VBE(sat) VBE(on) nA V V V Static Forward Current hFE Transfer Ratio Transition Frequency fT 300 *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3-181 |
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