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| SI4300T Tri-Band Monolithic Power Amplifier System Description The SI4300T is a complete, monolithic, high-power, and high-performance power amplifier system that integrates all functions and all components between the transmit portion of the transceiver and antenna switch module (ASM). The integrated circuit consists of two amplification paths which supports GSM 900, DCS 1800, and PCS 1900. These amplifiers are General Packet Radio Service (GPRS) class 12 compatible and can be used in GPRS multi-slot applications. The SI4300T integrates the input and output matching networks, complete power control, thermal and load mismatch protection, and many other features and functions in a single, standard CMOS die on a ceramic substrate. Features - Small 25 mm2 package (3.9 x 6.4 x 1.3 mm) - Complete power control - Thermal and load mismatch protection - Harmonic filtering - Input and output matching circuits - Optimal average burst current (ABC) for all power levels - Low powerdown current during receive and standby - GPRS Class 12 compatible - 3.0 to 4.8 V operation - JEDEC moisture sensitivity level (MSL) 1 - RoHS compliant Applications - E-GSM 900, DCS 1800, and PCS 1900 dual-band cellular handsets - GPRS data terminals VBAT APC Low Pass Filter Power Control SI4300T RFIL Limiter PA Matching Network Harmonic Filter RFOL GND Matching Network Limiter PA RFOH Harmonic Filter RFIH TLIMIT PAEN VDD SHUTD BSEL Monitor, Control, and I/O Interface Temperature and Voltage Sensors Power Amplifier Copyright (c) 2005 by Silicon Laboratories 11.10.05 SI4300T Tri-Band Monolithic Power Amplifier System Selected Electrical Specifications Parameter Input Power Output Noise Power Symbol PIN Test Condition GSM Across all operating conditions RBW = 100 kHz, f = 925 to 935 MHz RBW = 100 kHz, f > 935 MHz, 6 dBm POUT = over all power levels, All combinations of the following: PIN = 3.5 to 11 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angles Post-PA loss 1.4 dB DCS Across all operating conditions RBW = 100 kHz, f = 1805-1880 MHz RBW = 100 kHz, f > 1880 MHz POUT = over all power levels, All combinations of the following: PIN = 3.5 to 9 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angles Post-PA loss 1.4 dB PCS Across all operating conditions RBW = 100 kHz, f = 1930-1990 MHz RBW = 100 kHz, f > 1930 MHz POUT = over all power levels, All combinations of the following: PIN = 3.5 to 9 dBm, APC < 2.0 V, TC = -20 to 85 C, VBAT = 3.0 to 4.8 V, Antenna VSWR 20:1, all angles Post-PA loss 1.4 dB Min 3.5 -- -- -- -- Typ -- -- -86 1.6:1 -- Max 11 -72 -84 1.8:1 no damage or permanent degradation Unit dBm dBm dBm Input VSWR Ruggedness Input Power Output Noise Power PIN PNOISE 3.5 -- -- -- -- -- -- -- 1.6:1 -- 9 -77 -77 1.8:1 no damage or permanent degradation dBm dBm dBm Input VSWR Ruggedness Input Power Output Noise Power PIN PNOISE 3.5 -- -- -- -- -- -- -- 1.6:1 -- 9 -77 -77 1.8:1 no damage or permanent degradation dBm dBm dBm Input VSWR Ruggedness Pin Assignments (Top View) N/C BSEL RFIL GND RFIH APC N/C 1 E A Package Information C A M DETAIL A 0.10 M CAB NC 15 14 RFOH B (2X) aaa C C1 P1 S2 S1 C2 2 GND 16 VBAT VBAT 13 PAEN P4 3 17 4 5 12 11 18 10 TLIMIT SHUTD D C1 P2 P3 S3 S4 S5 DETAIL B (10X) 0.10 DETAIL D (6X) M CAB VDD GND (2X) Bottom View DETAIL C (3X) 0.10 M Top View aaa C 0.10 M CAB CAB Side View 6 GND 19 NC 20 9 H2 J2 h1 h2 DETAIL A DETAIL B DETAIL C K2 L2 H1 J1 K1 L1 7 8 RFOL Dimension A H1 h1 H2 h2 J1 J2 K1 K2 MIN 1.17 0.55 0.35 0.35 0.15 0.27 0.35 0.35 0.35 DETAIL D NOM MAX 1.30 0.60 0.40 0.40 0.20 0.32 0.40 0.40 0.40 1.43 0.65 0.45 0.45 0.25 0.37 0.45 0.45 0.45 Dimension MIN NOM MAX L1 L2 C1 C2 D E M P1 P2 0.35 0.40 0.45 1.65 1.70 1.75 2.70 BSC 2.60 BSC 6.40 BSC 3.90 BSC 2.90 BSC 1.70 BSC 0.50 BSC Dimension MIN NOM MAX P3 P4 S1 S2 S3 S4 S5 aaa 0.30 BSC 1.60 BSC 1.60 BSC 0.80 BSC 0.15 BSC 0.50 BSC 1.50 BSC 0.10 Power Amplifier Copyright (c) 2005 by Silicon Laboratories 11.10.05 Silicon Laboratories and Silicon Labs are trademarks of Silicon Laboratories Inc. Other products or brandnames mentioned herein are trademarks or registered trademarks of their respective holders |
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