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 MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPS3640/D
Switching Transistor
PNP Silicon
MPS3640
COLLECTOR 3 2 BASE 1 EMITTER
MAXIMUM RATINGS
Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value -12 -12 -4.0 -80 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C
1 2 3
CASE 29-04, STYLE 1 TO-92 (TO-226AA)
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector - Emitter Breakdown Voltage (IC = -100 Adc, VBE = 0) Collector - Emitter Sustaining Voltage(1) (IC = -10 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = -100 mAdc, IE = 0) Emitter - Base Breakdown Voltage (IE = -100 mAdc, IC = 0) Collector Cutoff Current (VCE = -6.0 Vdc, VBE = 0) (VCE = -6.0 Vdc, VBE = 0, TA = 65C) Base Current (VCE = -6.0 Vdc, VEB = 0) 1. Pulse Test: Pulse Width V(BR)CES VCEO(sus) V(BR)CBO V(BR)EBO ICES -- -- IB -- -0.01 -1.0 -10 nAdc -12 -12 -12 -4.0 -- -- -- -- Vdc Vdc Vdc Vdc Adc
v 300 ms, Duty Cycle v 2.0%.
Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1996
1
MPS3640
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued)
Characteristic Symbol Min Max Unit
ON CHARACTERISTICS(1)
DC Current Gain (IC = -10 mAdc, VCE = -0.3 Vdc) (IC = -50 mAdc, VCE = -1.0 Vdc) Collector - Emitter Saturation Voltage (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc, TA = 65C) Base - Emitter Saturation Voltage (IC = -10 mAdc, IB = -0.5 mAdc) (IC = -10 mAdc, IB = -1.0 mAdc) (IC = -50 mAdc, IB = -5.0 mAdc) hFE 30 20 VCE(sat) -- -- -- VBE(sat) -0.75 -0.75 -- -0.95 -1.0 -1.5 -0.2 -0.6 -0.25 Vdc 120 -- Vdc --
SMALL- SIGNAL CHARACTERISTICS
Current - Gain -- Bandwidth Product (IC = -10 mAdc, VCE = -5.0 Vdc, f = 100 MHz) Output Capacitance (VCB = -5.0 Vdc, IE = 0, f = 1.0 MHz) Input Capacitance (VEB = -0.5 Vdc, IC = 0, f = 1.0 MHz) fT Cobo Cibo 500 -- -- -- 3.5 3.5 MHz pF pF
SWITCHING CHARACTERISTICS
Delay Time Rise Time Storage Time Fall Time Turn-On Time (VCC = -6.0 Vdc, IC = -50 mAdc, IB1 = -5.0 mAdc) (VCC = -1.5 Vdc, IC = -10 mAdc, IB1 = -0.5 mAdc) Turn-Off Time (VCC = -6.0 Vdc, IC = -50 mAdc, IB1 = IB2 = -5.0 mAdc) (VCC = -1.5 Vdc, IC = -10 mAdc, IB1 = IB2 = -0.5 mAdc) 1. Pulse Test: Pulse Width (VCC = -6.0 Vdc, IC = -50 mAdc, VBE(off) = -1.9 Vdc, IB1 = -5.0 mAdc) (VCC = -6.0 Vdc, IC = -50 mAdc, IB1 = IB2 = -5.0 mAdc) td tr ts tf ton -- -- toff -- -- 35 75 25 60 ns -- -- -- -- 10 30 20 12 ns ns ns ns ns
v 300 ms, Duty Cycle v 2.0%.
VBB = +1.9 V VCC = -6.0 V 1.0 k 0 0.1 F 680 110 Vout 5.0 V
VBB = -6.0 V 5.0 k 0.1 F 5.0 k
VCC = 1.5 V 130 Vout
Vin -6.8 V TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 100 ns Zin = 50 OHMS NOTES: Collector Current = 50 mA, FALL TIME 1.0 ns NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 5.0 mA.
Vin 0 TO SAMPLING SCOPE PULSE SOURCE 51 INPUT Z 100 k RISE TIME 1.0 ns RISE TIME 1.0 ns PULSE WIDTH 200 ns Zin = 50 OHMS NOTES: Collector Current = 10 mA, FALL TIME 1.0 ns NOTES: Turn-On and Turn-Off Time NOTES: Base Currents = 0.5 mA.
Figure 1.
Figure 2.
2
Motorola Small-Signal Transistors, FETs and Diodes Device Data
MPS3640
200 VCE = -1.0 V hFE, DC CURRENT GAIN 100 70 50 30 20 -0.2 10 -0.1 -0.2 -5.0 -10 -20 -0.5 -1.0 -2.0 IC, COLLECTOR CURRENT (mA) -50 -100 0 -0.1 -0.2 VCE(sat) @ IC/IB = 10 -0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA) -50 -100 TJ = 125C V, VOLTAGE (VOLTS) 25C -55C -1.4 -1.2 -1.0 -0.8 VBE(on) @ VCE = -1.0 V -0.6 -0.4 TJ = 25C VBE(sat) @ IC/IB = 10
Figure 3. DC Current Gain
Figure 4. "On" Voltages
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
-1.0 TJ = 25C -0.8 IC = -1.0 mA -0.6 -5.0 mA -20 mA -80 mA V, TEMPERATURE COEFFICIENT (mV/ C)
+0.5
*APPLIES FOR IC/IB hFE/4 RVC for VCE(sat)
25C to 125C
0
-55C to 25C -0.5
-0.4
-1.0 25C to 125C RVB for VBE -2.0 -0.1 -0.2 -55C to 25C -50 -100
-0.2
-1.5
0 -0.01 -0.02
-0.05 -0.1 -0.2 -0.5 -1.0 IB, BASE CURRENT (mA)
-2.0
-5.0
-10
-0.5 -1.0 -2.0 -5.0 -10 -20 IC, COLLECTOR CURRENT (mA)
Figure 5. Collector Saturation Region
f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz)
Figure 6. Temperature Coefficients
2000 TJ = 25C f = 100 MHz 1000 800 600 400 -1.0 V VCE = -10 V C, CAPACITANCE (pF)
5.0 TJ = 25C 3.0 2.0 Cobo Cibo 1.0 0.7
200 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20 -30
-50 -70 -100
0.5 -0.2 -0.3
-0.5 -0.7 -1.0
-2.0 -3.0
-5.0 -7.0 -10
-20
IC, COLLECTOR CURRENT (mA)
VR, REVERSE VOLTAGE (VOLTS)
Figure 7. Current-Gain -- Bandwidth Product
Figure 8. Capacitance
Motorola Small-Signal Transistors, FETs and Diodes Device Data
3
MPS3640
PACKAGE DIMENSIONS
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 ---
A R P
SEATING PLANE
B
F
L K D
XX G H V
1
J
C N N
SECTION X-X
DIM A B C D F G H J K L N P R V
CASE 029-04 (TO-226AA) ISSUE AD
STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA/EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Small-Signal Transistors, FETs and Diodes Device Data
*MPS3640/D*
MPS3640/D


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