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| PD-95087 IRF7341IPBF l l l l l l l l Generation V Technology Ultra Low On-Resistance Dual N-Channel Mosfet Surface Mount Available in Tape & Reel Dynamic dv/dt Rating Fast Switching Lead-Free HEXFET(R) Power MOSFET S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = 55V 3 6 4 5 RDS(on) = 0.050 Top View Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. SO-8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. 55 4.7 3.8 38 2.0 1.3 0.016 20 30 72 5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W www.irf.com 1 07/07/06 IRF7341IPBF Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. 55 --- --- --- 1.0 7.9 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. --- 0.059 0.043 0.056 --- --- --- --- --- --- 24 2.3 7.0 8.3 3.2 32 13 740 190 71 Max. Units Conditions --- V VGS = 0V, ID = 250A --- V/C Reference to 25C, ID = 1mA 0.050 VGS = 10V, ID = 4.7A 0.065 VGS = 4.5V, I D = 3.8A --- V VDS = VGS, ID = 250A --- S VDS = 10V, ID = 4.5A 2.0 VDS = 55V, VGS = 0V A 25 VDS = 55V, VGS = 0V, TJ = 55C -100 VGS = -20V nA 100 VGS = 20V 36 ID = 4.5A 3.4 nC VDS = 44V 10 VGS = 10V, See Fig. 10 12 VDD = 28V 4.8 ID = 1.0A ns 48 RG = 6.0 20 RD = 16, --- VGS = 0V --- pF VDS = 25V --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- 60 120 2.0 A 38 1.2 90 170 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = 2.0A, VGS = 0V TJ = 25C, IF = 2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 4.7A, di/dt 220A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 6.5mH RG = 25, IAS = 4.7A. (See Figure 8) Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7341IPBF 100 I D , Drain-to-Source Current (A) 10 I D , Drain-to-Source Current (A) VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 100 VGS 15V 12V 10V 8.0V 6.0V 4.5V 4.0V 3.5V BOTTOM 3.0V TOP 10 3.0V 3.0V 1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 I D , Drain-to-Source Current (A) TJ = 25 C TJ = 150 C 10 ISD , Reverse Drain Current (A) 10 TJ = 150 C TJ = 25 C 1 1 3 4 V DS = 25V 20s PULSE WIDTH 5 6 0.1 0.2 0.5 0.8 V GS = 0 V 1.1 1.4 VGS , Gate-to-Source Voltage (V) VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7341IPBF RDS(on) , Drain-to-Source On Resistance (Normalized) ID = 4.7A 2.0 R DS (on), Drain-to-Source On Resistance () 2.5 0.120 0.100 1.5 0.080 1.0 VGS = 4.5V 0.060 0.5 VGS = 10V 0.0 -60 -40 -20 VGS = 10V 0 20 40 60 80 100 120 140 160 0.040 0 10 20 30 40 TJ , Junction Temperature ( C) I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.12 200 RDS(on) , Drain-to-Source On Resistance ( ) EAS , Single Pulse Avalanche Energy (mJ) TOP 160 BOTTOM ID 2.1A 3.8A 4.7A 0.10 120 0.08 80 I D = 4.7A 0.06 40 0.04 0 2 4 6 8 10 A 0 25 50 75 100 125 150 V GS , Gate-to-Source Voltage (V) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com IRF7341IPBF 1200 1000 VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = 4.5A VDS = 48V VDS = 30V VDS = 12V 16 C, Capacitance (pF) 800 Ciss 12 600 8 400 Coss 200 4 Crss 0 1 10 100 0 0 10 20 30 40 VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7341IPBF SO-8 Package Outline Dimensions are shown in milimeters (inches) 9DH 6 6 i p 9 @ r r C F G DI8C@T HDI H6Y $"! %'' # (' " ! &$ (' '( (%' #(& $&# $AA76TD8 !$AA76TD8 !!'# !## (( (% % $ A A' HDGGDH@U@ST HDI H6Y "$ &$ !$ "" $ ( !$ #' $ "' # !&AA76TD8 %"$AA76TD8 $' %! !$ $ # !& A' A 9 6 ' & ! % " $ 7 % @ $ # C !$Ab dA 6 %Y r r 6 FAA#$ 8 Ab#dA 'YAG & 'YAp 'YAi !$Ab dA 6 867 APPUQSDIU IPU@T) AA9DH@ITDPIDIBAEAUPG@S6I8DIBAQ@SA6TH@A #$H ((# !AA8PIUSPGGDIBA9DH@ITDPI)AHDGGDH@U@S "AA9DH@ITDPITA6S@ATCPXIADIAHDGGDH@U@STAbDI8C@Td #AAPVUGDI@A8PIAPSHTAUPAE@9@8APVUGDI@AHT !66 $AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A $Ab%d %AAA9DH@ITDPIA9P@TAIPUADI8GV9@AHPG9AQSPUSVTDPIT AAAAAHPG9AQSPUSVTDPITAIPUAUPA@Y8@@9A!$Ab d &AAA9DH@ITDPIADTAUC@AG@IBUCAPAAG@69AAPSATPG9@SDIBAUP AAAAA6ATV7TUS6U@ 'YA&!Ab!'d %#%Ab!$$d "YA !&Ab$d 'YA &'Ab&d SO-8 Part Marking Information @Y6HQG@)AUCDTADTA6IADSA& AHPTA@U 96U@A8P9@AXX QA2A9DTBI6U@TAG@69AAAS@@ QSP9V8UAPQUDPI6G A2AG6TUA9DBDUAPAAUC@A@6S XXA2AX@@F 6A2A6TT@H7GATDU@A8P9@ GPUA8P9@ Q6SUAIVH7@S DIU@SI6UDPI6G S@8UDAD@S GPBP ;;;; ) 6 www.irf.com IRF7341IPBF SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 12.3 ( .484 ) 11.7 ( .461 ) 8.1 ( .318 ) 7.9 ( .312 ) FEED DIRECTION NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 330.00 (12.992) MAX. 14.40 ( .566 ) 12.40 ( .488 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA-541. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualifications Standards can be found on IR's Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 07/2006 www.irf.com 7 |
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