 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BFQ19S NPN Silicon RF Transistor For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5 GHz at collector currents from 10 mA to 70 mA 1 2 3 Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point2) RthJS 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 2 VPS05162 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFQ19S Maximum Ratings Parameter Marking FG 1=B Pin Configuration 2=C 3=E Package SOT89 Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg Value 15 20 20 3 75 10 1 150 -65 ... 150 -65 ... 150 Unit V Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 85 C 1) mA W C 65 K/W 1 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 2 V, IC = 0 DC current gain IC = 70 mA, VCE = 8 V hFE 40 100 220 IEBO 10 A ICBO 100 nA ICES 100 A V(BR)CEO 15 V Symbol min. Values typ. max. Unit 2 Jun-22-2001 BFQ19S Electrical Characteristics at TA = 25C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (verified by random sampling) Transition frequency IC = 70 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure IC = 20 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz f = 1.8 GHz Power gain, maximum available 1) IC = 70 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz f = 1.8 GHz Transducer gain IC = 30 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz Third order intercept point IC = 70 mA, VCE = 8 V, ZS =ZSopt , ZL =ZLopt , f = 1.8 GHz IP3 |S21e|2 9.5 4 35 Gma 11.5 7 F 2.5 4 Ceb 4.4 Cce 0.4 Ccb 1 1.5 fT 4 5.5 typ. max. Unit GHz pF dB dBm 1G ma = |S21 / S12 | (k-(k2-1)1/2) 3 Jun-22-2001 BFQ19S Total power dissipation Ptot = f (TS ) 1200 mW 1000 900 P tot 800 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 C 150 TS Permissible Pulse Load RthJS = f (tp ) Permissible Pulse Load Ptotmax/P totDC = f (tp) 10 2 10 2 K/W Ptotmax / PtotDC - 10 1 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp 4 Jun-22-2001 |
Price & Availability of BFQ19S
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |