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| VCES Low VCE(sat) IGBT High Speed IGBT IXSH/IXSM 25 N100 1000 V IXSH/IXSM 25 N100A 1000 V I C25 50 A 50 A VCE(sat) 3.5 V 4.0 V Short Circuit SOA Capability Symbol V CES V CGR V GES V GEM I C25 I C90 I CM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight g Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient T C = 25C T C = 90C T C = 25C, 1 ms V GE = 15 V, TJ = 125C, RG = 4.7 Clamped inductive load, L = 30 H V GE = 15 V, VCE = 0.6 * V CES, TJ = 125C RG = 33 , non repetitive T C = 25C Maximum Ratings 1000 1000 20 30 50 25 100 ICM = 50 @ 0.8 VCES 10 200 -55 ... +150 150 -55 ... +150 V V V V A A A A s TO-247 AD (IXSH) G C E TO-204 AE (IXSM) C W C C C G = Gate, E = Emitter, C = Collector, TAB = Collector Mounting torque 1.13/10 Nm/lb.in. TO-204 = 18 g, TO-247 = 6 300 C Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 1000 5 TJ = 25C TJ = 125C 8 250 1 100 25N100 25N100A 3.5 4.0 V V A mA nA V V Features International standard packages Guaranteed Short Circuit SOA capability Low VCE(sat) - for low on-state conduction losses High current handling capability MOS Gate turn-on - drive simplicity Fast Fall Time for switching speeds up to 20 kHz q q q q q q BVCES VGE(th) I CES I GES VCE(sat) IC IC = 3 mA, VGE = 0 V = 2.5 mA, VCE = VGE V CE = 0.8 * VCES V GE = 0 V V CE = 0 V, VGE = 20 V IC = IC90, VGE = 15 V Applications AC motor speed control Uninterruptible power supplies (UPS) Welding q q q q q Advantages Easy to mount with 1 screw (TO-247) (isolated mounting screw hole) High power density (c) IXYS Corporation. All rights reserved. IXYS reserves the right to change limits, test conditions and dimensions. 91548F (4/96) IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 10 17 140 2850 VCE = 25 V, VGE = 0 V, f = 1 MHz 210 50 112 IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, T J = 25C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 4.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG 25N100 25N100A 25N100 25N100A 25N100 25N100A 25N100 25N100A 28 50 70 580 150 1200 800 10 8 70 580 4.2 200 1500 1000 15 11 550 3000 1500 130 40 75 S A pF pF pF nC nC nC ns ns ns ns ns mJ mJ ns ns mJ ns ns ns mJ mJ 0.63 K/W 0.25 K/W TO-204AE Outline 1 = Gate 2 = Collector 3 = Emitter Tab = Collector TO-247 AD Outline gfs I C(on) Cies C oes C res Qg Q ge Q gc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle d 2 % VGE = 15 V, VCE = 10 V 1 = Gate 2 = Emitter Case = Collector IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS MOSFETs and IGBTs are covered by one of the following U.S.patents: 4,835,592 4,881,108 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A Fig. 1 Saturation Characteristics 50 TJ = 25C VGE = 15V Fig. 2 180 160 140 TJ = 25C Output Characterstics 13V 11V 40 VGE =15V IC - Amperes IC - Amperes 120 100 80 60 40 20 30 20 9V 13V 11V 10 7V 9V 7V 0 0 1 2 3 4 5 0 0 2 4 6 8 10 12 14 16 18 20 VCE - Volts VCE - Volts Fig. 3 Collector-Emitter Voltage vs. Gate-Emitter Voltage 10 9 8 7 T J = 25C Fig. 4 1.6 VGE = 15V Temperature Dependence of Output Saturation Voltage IC = 50A 6 5 4 3 2 1 0 8 9 10 11 12 13 VCE(sat) - Normalized 1.4 1.2 IC = 25A VCE - Volts IC = 50A IC = 25A IC = 12.5A 1.0 0.8 0.6 -50 IC = 12.5A 14 15 -25 0 25 50 75 100 125 150 VGE - Volts TJ - Degrees C Fig. 5 Input Admittance 50 VCE = 10V 1.3 Fig. 6 Temperature Dependence of Breakdown and Threshold Voltage 40 BV / VGE(th) - Normalized 1.2 VGE(th) IC = 2.5mA IC - Amperes 1.1 1.0 30 20 10 0 5 6 7 8 9 10 11 12 13 14 15 T J = 125C TJ = 25C T J = - 40C 0.9 BVCES IC = 3mA 0.8 0.7 -50 -25 0 25 50 75 100 125 150 GE (c) IXYS Corporation. All rights reserved. V - Volts TJ - Degrees C IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXSH 25N100 IXSM 25N100 IXSH 25N100A IXSM 25N100A Fig.7 Turn-Off Energy per Pulse and Fall Time on Collector Current 1500 TJ = 125C Fig.8 Dependence of Turn-Off Energy Per Pulse and Fall Time on RG 20 1500 T J = 125C 10 IC = 25A 1200 RG = 10 18 16 9 8 6 5 4 3 2 1 0 7 1200 tfi - nanoseconds Eoff - Millijoules 900 600 300 0 tfi 12 10 8 6 4 2 0 900 600 300 0 0 tfi Eoff Eoff 10 15 20 25 30 35 40 45 50 10 20 30 40 50 60 70 80 90 100 IC - Amperes RG - Ohms Fig.9 Gate Charge Characteristic Curve 15 12 VCE = 500V IC = 25A Fig.10 100 Turn-Off Safe Operating Area T J = 125C 10 RG = 4.7 dV/dt < 6V/ns 9 6 3 0 0 25 50 75 100 125 150 IC - Amperes VGE - Volts 1 0.1 0.01 0 200 400 600 800 1000 QG- nanocoulombs VCE - Volts Fig.11 Transient Thermal Impedance 1.000 D=0.5 D=0.2 ZthJC - K/W 0.100 D=0.1 D=0.05 D=0.02 D=0.01 D = Duty Cycle 0.010 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 Eoff - Millijoules 14 tfi - nanoseconds (c) IXYS Corporation. All rights reserved. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS Corporation 3540 Bassett Street, Santa Clara CA 95054 Phone: 408-982-0700, Fax: 408-496-0670 IXYS Semiconductor GmbH Edisonstr. 15, D-68623 Lampertheim Phone: +49-6206-503-0, Fax: +49-6206-503627 |
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