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| 2N/SST5484 Series Vishay Siliconix N-Channel JFETs 2N5484 2N5485 2N5486 PRODUCT SUMMARY Part Number 2N/SST5484 2N/SST5485 2N/SST5486 SST5484 SST5485 SST5486 VGS(off) (V) -0.3 to -3 -0.5 to -4 -2 to -6 V(BR)GSS Min (V) -25 -25 -25 gfs Min (mS) 3 3.5 4 IDSS Min (mA) 1 4 8 FEATURES D Excellent High-Frequency Gain: Gps 13 dB (typ) @ 400 MHz - 5485/6 D Very Low Noise: 2.5 dB (typ) @ 400 MHz - 5485/6 D Very Low Distortion D High AC/DC Switch Off-Isolation BENEFITS D D D D D Wideband High Gain Very High System Sensitivity High Quality of Amplification High-Speed Switching Capability High Low-Level Signal Amplification APPLICATIONS D D D D High-Frequency Amplifier/Mixer Oscillator Sample-and-Hold Very Low Capacitance Switches DESCRIPTION The 2N/SST5484 series consists of n-channel JFETs designed to provide high-performance amplification, especially at high frequencies up to and beyond 400 MHz. The 2N series, TO-226AA (TO-92), and SST series, TO-236 (SOT-23), packages provide low-cost options and are available with tape-and-reel to support automated assembly (see Packaging Information). TO-226AA (TO-92) D 1 D 1 TO-236 (SOT-23 ) 3 S 2 S 2 G G 3 Top View 2N5484 2N5485 2N5486 Top View SST5484 (H4)* SST5485 (H5)* SST5486 (H6)* *Marking Code for TO-236 For applications information see AN102 and AN105. Document Number: 70246 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-1 2N/SST5484 Series Vishay Siliconix ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -25 V Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 mA Lead Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300_C Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 150_C Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to 150_C Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350 mW Notes a. Derate 2.8 mW/_C above 25_C SPECIFICATIONS FOR 2N SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits 2N5484 2N5485 2N5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Symbol Test Conditions Typa Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 4 -4 10 -1 -200 -25 V -2 8 -6 20 -1 -200 nA pA V mA -0.002 -0.2 -20 0.8 Gate-Source Forward Voltagec Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 0.7 1 10 5 1 2 3.5 7 60 5 1 2 4 8 75 5 1 2 nV Hz pF mS mS High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs(RE) Yos(RE) Yis(RE) VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Common-Source Power Gain Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 2.5 3 2 4 2 4 16 25 18 10 30 20 2.5 18 10 30 20 2.5 dB 0.1 1 1 mS 75 100 100 2.5 3 3.5 mS mS m VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW www.vishay.com f = 100 MHz f = 400 MHz 7-2 Document Number: 70246 S-04028--Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix SPECIFICATIONS FOR SST SERIES (TA = 25_C UNLESS OTHERWISE NOTED) Limits SST5484 SST5485 SST5486 Parameter Static Gate-Source Breakdown Voltage Gate-Source Cutoff Voltage Saturation Drain Currentb Gate Reverse Current Gate Operating Currentc Gate-Source Forward Voltagec Symbol Test Conditions Typb Min Max Min Max Min Max Unit V(BR)GSS VGS(off) IDSS IGSS IG VGS(F) IG = -1 mA , VDS = 0 V VDS = 15 V, ID = 10 nA VDS = 15 V, VGS = 0 V VGS = -20 V, VDS = 0 V TA = 100_C VDG = 10 V, ID = 1 mA IG = 10 mA , VDS = 0 V -35 -25 -0.3 1 -3 5 -1 -200 -25 -0.5 -4 10 -1 -200 -25 V -2 8 -6 20 -1 -200 nA pA V mA 4 -0.002 -0.2 -20 0.8 Dynamic Common-Source Forward Transconductanceb Common-Source Output Conductanceb Common-Source Input Capacitance Common-Source Reverse Transfer Capacitance Common-Source Output Capacitance Equivalent Input Noise Voltagec gfs gos Ciss Crss Coss en VDS = 15 V, VGS = 0 V f = 100 Hz VDS = 15 V, VGS = 0 V f = 1 MHz 3 VDS = 15 V, VGS = 0 V f = 1 kHz 6 50 2.2 3.5 7 60 4 8 75 mS mS 0.7 pF 1 10 nV Hz High-Frequency Common-Source Transconductance Common-Source Output Conductance Common-Source Input Conductance f = 100 MHz Yfs Yos Yis VDS = 15 V VGS = 0 V f = 400 MHz f = 100 MHz f = 400 MHz f = 100 MHz f = 400 MHz VDS = 15 V, ID = 1 mA f = 100 MHz Gps VDS = 15 V ID = 4 mA f = 100 MHz f = 400 MHz 5.5 5.5 45 65 0.05 0.8 20 21 13 0.3 2 1 2.5 NH dB mS mS mS m Common-Source Power Gain VDS = 15 V, VGS = 0 V RG = 1 MW , f = 1 kHz Noise Figure NF VDS = 15 V, ID = 1 mA RG = 1 kW , f = 100 MHz VDS = 15 V ID = 4 mA RG = 1 kW f = 100 MHz f = 400 MHz Notes a. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. b. Pulse test: PW v300 ms duty cycle v3%. c. This parameter not registered with JEDEC. Document Number: 70246 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-3 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Drain Current and Transconductance vs. Gate-Source Cutoff Voltage 20 IDSS - Saturation Drain Current (mA) 10 rDS(on) - Drain-Source On-Resistance ( ) gfs - Forward Transconductance (mS) 500 On-Resistance and Output Conductance vs. Gate-Source Cutoff Voltage 100 rDS @ ID = 1 mA, VGS = 0 V 400 gos @ VDS = 10 V, VGS = 0 V f = 1 kHz gos - Output Conductance (S) 80 16 IDSS 8 12 gfs 6 300 rDS gos 60 8 4 200 40 4 IDSS @ VDS = 10 V, VGS = 0 V gfs @ VDS = 10 V, VGS = 0 V f = 1 kHz 2 100 20 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 0 0 0 -2 -4 -6 -8 VGS(off) - Gate-Source Cutoff Voltage (V) -10 0 Gate Leakage Current 100 nA 10 ID = 5 mA 1 mA 0.1 mA IG - Gate Leakage 1 nA TA = 125_C gfs - Forward Transconductance (mS) 8 Common-Source Forward Transconductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz 10 nA 6 25_C 4 TA = -55_C 100 pA ID = 5 mA 1 mA 0.1 mA TA = 25_C IGSS @ 125_C 10 pA 125_C 2 1 pA IGSS @ 25_C 0.1 pA 0 4 8 12 16 VDG - Drain-Gate Voltage (V) 20 0 0.1 1 ID - Drain Current (mA) 10 Output Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) ID - Drain Current (mA) VGS = 0 V 6 -0.2 V -0.4 V 4 -0.6 V -0.8 V 2 -1.0 V -1.2 V -1.4 V 8 12 15 Output Characteristics VGS(off) = -3 V VGS = 0 V 9 -0.3 V -0.6 V 6 -0.9 V -1.2 V -1.5 V 3 -1.8 V 0 0 2 4 6 10 0 0 2 4 6 8 10 VDS - Drain-Source Voltage (V) VDS - Drain-Source Voltage (V) Document Number: 70246 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-4 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Transfer Characteristics 10 VGS(off) = -2 V 8 ID - Drain Current (mA) TA = -55_C 6 25_C ID - Drain Current (mA) VDS = 10 V 8 10 VGS(off) = -3 V TA = -55_C 25_C 6 125_C 4 VDS = 10 V Transfer Characteristics 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 VGS - Gate-Source Voltage (V) -2 0 0 -0.6 -1.2 -1.8 -2.4 VGS - Gate-Source Voltage (V) -3 Transconductance vs. Gate-Source Voltage 10 VGS(off) = -2 V gfs - Forward Transconductance (mS) 8 TA = -55_C 6 25_C VDS = 10 V f = 1 kHz gfs - Forward Transconductance (mS) 8 10 Transconductance vs. Gate-Source Voltage VGS(off) = -3 V VDS = 10 V f = 1 kHz TA = -55_C 6 25_C 4 125_C 4 125_C 2 2 0 0 -0.4 -0.8 -1.2 -1.6 -2 VGS - Gate-Source Voltage (V) 0 0 -0.6 -1.2 -1.8 -2.4 -3 VGS - Gate-Source Voltage (V) On-Resistance vs. Drain Current 300 rDS(on) - Drain-Source On-Resistance ( ) TA = 25_C 240 AV - Voltage Gain VGS(off) = -2 V 180 -3 V 120 80 100 Circuit Voltage Gain vs. Drain Current g fs R L AV + 1 ) R g L os Assume VDD = 15 V, VDS = 5 V RL + 60 10 V ID 40 VGS(off) = -2 V 60 20 -3 V 0 0.1 0 1 ID - Drain Current (mA) 10 0.1 1 ID - Drain Current (mA) 10 Document Number: 70246 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-5 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Common-Source Input Capacitance vs. Gate-Source Voltage 5 Crss - Reverse Feedback Capacitance (pF) f = 1 MHz Ciss - Input Capacitance (pF) 4 3 f = 1 MHz 2.4 Common-Source Reverse Feedback Capacitance vs. Gate-Source Voltage 3 VDS = 0 V 1.8 VDS = 0 V 2 10 V 1 1.2 10 V 0.6 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 0 0 -4 -8 -12 -16 VGS - Gate-Source Voltage (V) -20 Input Admittance 100 TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gis (mS) (mS) 100 Forward Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 10 gfs -bfs 1 bis 1 0.1 100 200 500 1000 0.1 100 200 500 1000 f - Frequency (MHz) f - Frequency (MHz) Reverse Admittance 10 10 TA = 25_C VDS = 15 V VGS = 0 V Common Source Output Admittance TA = 25_C VDS = 15 V VGS = 0 V Common Source 1 (mS) -brs bos 1 (mS) -grs 0.1 0.1 gos 0.01 100 200 500 f - Frequency (MHz) 1000 0.01 100 200 500 f - Frequency (MHz) 1000 www.vishay.com 7-6 Document Number: 70246 S-04028--Rev. E, 04-Jun-01 2N/SST5484 Series Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) 20 Equivalent Input Noise Voltage vs. Frequency VGS(off) = -3 V VDS = 10 V 20 Output Conductance vs. Drain Current VGS(off) = -3 V VDS = 10 V f = 1 kHz Hz gos - Output Conductance (S) 16 16 TA = -55_C 12 en - Noise Voltage nV / 12 8 8 125_C 4 25_C 4 ID = IDSS 0 10 100 1k ID = 5 mA 0 10 k 100 k 0.1 1 ID - Drain Current (mA) 10 f - Frequency (Hz) Document Number: 70246 S-04028--Rev. E, 04-Jun-01 www.vishay.com 7-7 |
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