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| S T M8303 S amHop Microelectronics C orp. AP R ,27 2005 ver1.1 Dual E nhancement Mode Field E ffect Transistor ( N and P Channel) P R ODUC T S UMMAR Y (N-C hannel) V DS S 30V P R ODUC T S UMMAR Y (P -C hannel) V DS S -30V ID 6.5A R DS (ON) ( m W ) Max ID -5.3A R DS (ON) ( m W ) Max 32 @ V G S = 10V 48 @ V G S = 4.5V D1 8 45 @ V G S = -10V 60 @ V G S = -4.5V D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S 2 G2 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous a @ TJ=25 C b -P ulsed Drain-S ource Diode Forward C urrent a Maximum P ower Dissipation a Operating Junction and S torage Temperature R ange S ymbol VDS VGS ID IDM IS PD TJ, TS TG N-C hannel P-C hannel 30 20 6.5 26 1.7 2.0 -55 to 150 -30 20 -5.3 -20 -1.7 Unit V V A A A W C THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-Ambient a R JA 62.5 C /W 1 S T M8303 N-Channel ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) Parameter 5 S ymbol BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c Condition VGS = 0V, ID = 250uA VDS = 24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250uA VGS =10V, ID = 6A VGS =4.5V, ID= 4A VDS = 10V, VGS = 10V VDS = 10V, ID = 6A Min Typ C Max Unit 30 1 V uA 100 nA 1 1.4 25 39 20 8 511 110 76 3 V OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 32 m ohm 48 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd 2 VDD = 15V, ID = 1A, VGS = 10V, R GE N = 6 ohm VDS =15V, ID =6A,VGS =10V VDS =15V, ID =6A,VGS =4.5V VDS =10V, ID = 6A, VGS =10V 5 9.1 13.9 5 11.5 6.1 1.4 3.1 ns ns ns ns nC nC nC nC S T M8303 P-Channel ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS CISS COSS CRSS c S ymbol Condition VGS = 0V, ID = -250uA VDS = -24V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250uA VGS =-10V, ID = -4.5A VGS =-4.5V, ID = -3.6A VDS = -5V, VGS = -10V VDS = - 5V, ID =- 4.5A Min Typ C Max Unit -30 -1 V uA 100 nA -1 -1.5 35 48 -12 10 713 168 110 -3 V ON CHAR ACTE R IS TICS b Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 45 m ohm 60 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS c Input Capacitance Output Capacitance R everse Transfer Capacitance VDS =-15V, VGS = 0V f =1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VD = -15V, ID = -1A, VGEN = -10V, R GE N = 6 ohm VDS=-15V,ID=-4.5A,VGS=-10V VDS=-15V,ID=-4.5A,VGS=-4.5V VDS =-15V, ID = - 4.5A, VGS =-10V 3 6.5 10 62.6 41 14.8 7.4 1.8 3.7 ns ns ns ns nC nC nC nC S T M8303 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A VGS = 0V, Is =-1.7A N-Ch P-Ch Min Typ Max Unit 0.8 -0.78 1.2 -1.2 C DRAIN-SOURCE DIODE CHARACTERISTICS b V Notes a.Surface Mounted on FR4 Board, tO10sec. * R JA is 62.5 C/W when mounted on 1in2 FR-4 board with 2oz Copper * R JA is 125 C/W when mounted on 0.02 in2 FR-4 board with 2oz Copper b.Pulse Test:Pulse WidthO300gs, Duty Cycle O 2%. c.Guaranteed by design, not subject to production testing. N-Channel 20 16 VGS=4V 25 5 20 ID, Drain Current(A) 12 VGS=10,8,5V 8 VGS=3V 4 ID, Drain Current (A) 15 25 C 10 -55 C 5 0 Tj=125 C 0 0 1 2 3 4 5 6 0 0.8 1.6 2.4 3.2 4.0 4.8 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 1200 1000 2.2 1.8 Figure 2. Transfer Characteristics RDS(ON), On-Resistance (Normalized) V G S =10V ID=6A C, Capacitance (pF) 800 600 400 200 0 0 Crss 5 10 15 20 25 30 Coss Ciss 1.4 1.0 0.8 0.4 0 -50 -25 0 25 50 75 100 125 150 Tj=( C ) VDS, Drain-to Source Voltage (V) T j, J unction T emperature ( C ) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 4 S T M8303 N-C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 gFS , T rans conductance (S ) Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =10V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 5 S T M8303 P -C hannel 20 -V G S =4V 16 20 25 25 C -ID, Drain C urrent (A) -ID, Drain C urrent (A) -55 C 12 -V G S =10,8,5V 8 -VGS=3V 4 0 15 T j=125 C 10 5 0 0 1 2 3 4 5 6 0 0.8 1.6 2.4 3.2 4.0 4.8 -V DS , Drain-to-S ource Voltage (V ) -V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics F igure 2. Trans fer C haracteris tics 1200 1000 2.2 1.8 V G S =-10V ID=-4.5A C , C apacitance (pF ) RDS(ON), On-Resistance (Normalized) 800 600 400 200 0 C rs s 0 5 10 15 20 1.4 1.0 0.8 0.4 0 -50 C is s C os s 25 30 -25 0 25 50 75 100 125 150 Tj=( C ) -V DS , Drain-to S ource Voltage (V ) T j, J unction T emperature ( C ) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Temperature 6 S T M8303 P -C hannel 5 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.6 1.4 1.2 1.0 0.8 0.6 0.4 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=-250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=-250uA T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 15 F igure 6. B reakdown V oltage V ariation with T emperature 20.0 gFS , T rans conductance (S ) -Is , S ource-drain current (A) 20 12 9 6 3 0 0 5 10 V DS =-5V 15 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS , Drain-S ource C urrent (A) -V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 7 S T M8303 N-C hannel V G S , G ate to S ource V oltage (V ) 10 ID, Drain C urrent (A) 40 5 8 6 4 2 0 0 V DS=10V ID=6A 10 R (O DS N) L im it 10 1s 10m s 0m s 11 DC 0.1 0.03 VGS =10V S ingle P ulse T A=25 C 0.1 1 10 30 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area P -C hannel -V G S , G ate to S ource V oltage (V ) 10 -ID, Drain C urrent (A) 50 8 6 4 2 0 0 VDS =-15V ID=-4.5A 10 R (O DS N) L im it 10 10 1s DC ms 0m s 11 0.1 0.03 VGS =-10V S ingle P ulse T A=25 C 0.1 1 10 50 2 4 6 8 10 12 14 16 Q g, T otal G ate C harge (nC ) -V DS , B ody Diode F orward V oltage (V ) F igure 9. G ate C harge F igure 10. Maximum S afe O perating Area 8 S T M8303 V DD ton toff tr 90% 5 VG S R GE N V IN D G RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 90% S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms N-C hannel 9 Normalized Transient 1 0.5 0.2 Thermal Resistance 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 P-C hannel 9 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve Normalized Transient Thermal Resistance 1 0.5 0.2 0.1 0.1 0.05 0.02 0.01 on P DM t1 1. 2. 3. 4. t2 0.01 0.00001 0.0001 Single Pulse 0.001 0.01 0.1 1 10 R thJ A (t)=r (t) * R thJ A R thJ A=S ee Datas heet T J M-T A = P DM* R thJ A (t) Duty C ycle, D=t1/t2 100 1000 Square Wave Pulse Duration(sec) Normalized Thermal Transient Impedance Curve S T M8303 PAC K AG E OUT LINE DIME NS IONS S O-8 1 L E D 0.015X45X A e 0.05 TYP. B 0.016 TYP. A1 0.008 TYP. C H S Y MB OLS A A1 D E H L MILLIME T E R S MIN 1.35 0.10 4.80 3.81 5.79 0.41 0X MAX 1.75 0.25 4.98 3.99 6.20 1.27 8X MIN 0.053 0.004 0.189 0.150 0.228 0.016 0X INC HE S MAX 0.069 0.010 0.196 0.157 0.244 0.050 8X 10 S T M8303 SO-8 Tape and Reel Data SO-8 Carrier Tape unit:P PACKAGE SOP 8N 150O A0 6.40 B0 5.20 K0 2.10 D0 r1.5 (MIN) D1 r1.5 + 0.1 - 0.0 E 12.0 O0.3 E1 1.75 E2 5.5 O0.05 P0 8.0 P1 4.0 P2 2.0 O0.05 T 0.3 O0.05 SO-8 Reel UNIT:P TAPE SIZE 12 P REEL SIZE r330 M 330 O 1 N 62 O1.5 W 12.4 + 0.2 W1 16.8 - 0.4 H r12.75 + 0.15 K S 2.0 O0.15 G R V 11 |
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