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| ISO LINK 1 ANODE BASE OLS 249 Radiation Tolerant Phototransistor Hermetic Surface Mount Optocoupler .170.010 .100 .050 .065 4 COLLECTOR OLS XXX 3 4 5 XXYY 3 CATHODE EMITTER .245.010 1 2 6 .090 6 5 .025 (6 PLS) .080 MAX. SCHEMATIC PACKAGE OUTLINE Features Hermetic SMT package 1500 Vdc electrical isolation High current transfer ratio Small package size High reliability and rugged construction Hi-rel screening available Radiation tolerant NOTES: Description The OLS249 consists of a light emitting diode optically coupled to a NPN silicon phototransistor mounted and coupled in a custom hermetic surface mount LCC package. The very low input current makes the OLS249 well suited for direct CMOS to LSTTL / TTL interfaces. Electrical parameters are similar to the JEDEC registered 4N49 optocoupler but with much better CTR degradation characteristics due to radiation exposure Special electrical parametric selections are availabe on request. 1. Measured between pins 1, 2 and 6 shorted together and pins 3,4 and 5 shorted together. TA = 25 C and duration = 1 second. 2. Derate linearly to 125C free-air temperature at 0.67 mA / C above 65C. 3. For pulse width 1 S, pulse repetition rate 300 pps. 4. Derate linearly to 125C free-air temperature at 3.0 mW / C above 25 C Absolute Maximum Ratings Coupled Input to Output Isolation Voltage1 Storage Temperature Range Operation Temperature Range Mounting Temperature Range ( 10 seconds max. ) Input Diode Average Input Current2 Peak Forward Current3 Reverse Voltage Output Detector Collector - Emitter Voltage Emitter - Base Voltage Collector - Base Voltage Continuous Collector Current Power Dissipation4 1500 Vdc -65 C to + 150 C -55 C to + 125 C 240 C 40 mA 1A 2.0 V 40 V 7V 45 V 50 mA 300 mW ELECTRICAL CHARACTERISTIC ( TA = 25 C, Unless Otherwise Specified ) Parameter On-State Collector Current Symbol IC (ON) Min 2.0 2.8 2.0 30 Max 12 Units mA mA mA A Test Conditions I F = 1 mA, VCE = 5.0V I F = 2 mA, VCE = 5.0V, TA = -55C I F = 2 mA, VCE = 5.0V, TA = 100C I F = 10 mA, VCB = 5.0V I F = 2mA, IC =2.0mA Fig. Note 2,3 On-State Coll.-Base Current Saturation Voltage Breakdown Voltage Collector to Emitter Collector to Base Emitter to Base Off-State Leakage Current Collector to Emitter Collector to Base Input Forward Voltage ICB(ON) VCE(SAT) 0.3 V BVCEO BVCBO BVEBO ICE(OFF) ICB(OFF) VF 40 45 7 100 100 10 1.8 1.4 1.2 2.2 1.8 1.6 100 10 11 5 25 25 V V V nA A nA V V V A pF S S I CE = 1 mA I CB = 100 A I EB = 100 A VCE = 20V VCE = 20V, TA =100 C VCB = 20V I F = 10mA, TA = -55C I F = 10mA I F = 10mA, TA = 100C V R = 2.0V V I-O = 1000Vdc V I-O = 0V, f = 1 MHz VCC = 10V, RL = 100 I F = 5mA 4 1 1 1 1 1 Input Reverse Current Input to Output Resistance Input to Output Capacitance Rise Time Fall Time IR rI-O c I-O tr tf TYPICAL PERFORMANCE CURVES 100 9 NORMALIZED COLLECTOR CURRENT I F - FORWARD CURRENT ( mA ) 8 7 6 5 4 3 2 1 0 0 1 NORMALIZED TO: I F = 1 mA VCE = 5V 125 C 25 C -55 C 10 TA = 25 C 1 .1 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2 3 4 5 6 7 8 9 10 V F - FORWARD VOLTAGE ( V ) I F = FORWARD CURRENT ( mA ) Fig. 1 - Diode Forward Characteristics 1.8 1.6 NORMALIZED TO: Fig. 2 - Normalized Ic vs. I F NORMALIZED CTRCE 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -75 VCE = 5V TA = 25 C I F = 1 mA -50 -25 0 25 50 75 100 125 150 AMBIENT TEMPERATURE (C) Fig. 3 - Normalized CTR vs. Temperature INPUT IF 0 VCC Pulse Width = 100S Duty Cycle = 1% IF VOUT 0 90 % 10 % tr tf 100 RL VOUT Fig. 4 - Switching Test Circuit |
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