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| BB 804 Silicon Variable Capacitance Diode q q q q BB 804 For FM tuners Monolithic chip with common cathode for perfect tracking of both diodes Uniform "square law" characteristics Ideal Hifi tuning device when used in low-distortion, back-to-back configuration Type BB 804 Ordering Code (tape and reel) Q62702-B372 Pin Configuration Marking SF (see Characteristics for marking of capacitance subgroups) Package SOT-23 Maximum Ratings per Diode Parameter Reverse voltage Peak reverse voltage Forward current, TA 60 C Operating temperature Storage temperature range Thermal Resistance Junction - ambient Rth JA Symbol VR VRM IF Top Tstg Values 18 20 50 100 - 65 ... + 150 Unit V mA C 600 K/W Semiconductor Group 1 10.94 BB 804 Electrical Characteristics per Diode at TA = 25 C, unless otherwise specified. Parameter Reverse current VR = 16 V VR = 16 V, TA = 60 C Diode capacitance VR = 2 V, f = 1 MHz Capacitance ratio VR = 2 V, 8 V, f = 1 MHz Series resistance VR = 2 V, f = 100 MHz Q factor VR = 2 V, f = 100 MHz Temperature coefficient of diode capacitance VR = 2 V, f = 1 MHz Diode capacitance1) VR = 2 V, f = 1 MHz Subgroups: 0 1 2 3 4 Symbol min. IR - - CT CT2 CT8 rs Q TCC 42 1.65 - - - - - - 1.71 0.18 200 330 20 200 47.5 - - - - pF - - ppm/K Values typ. max. nA Unit CT 42 43 44 45 46 - - - - - 43.5 44.5 45.5 46.5 47.5 pF 1) The capacitance subgroup is marked by the subgroup number printed on the component and the package label. A packaging unit (e.g. 8-mm tape) contains diodes of one subgroup only. Delivery of different capacitance subgroups requires a special agreement. Semiconductor Group 2 BB 804 Diode capacitance CT = f (VR) per diode, f = 1 MHz Capacitance ratio CTref / CT = f (VR) per diode; Vref = 1 V, 2 V, f = 1 MHz Temperature coefficient TCC = f (VR) per diode, f = 1 MHz Semiconductor Group 3 |
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