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| Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package SFH 9201 0...0.1 6.2 5.8 3.4 3.0 4.2 3.8 0.15 0.13 2.1 1.7 0.5 0.3 1.27 spacing GEO06840 1 2 3 1 Anode 2 3 Emitter 6 5 4 4 Collector 5 - Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q Optimaler Arbeitsabstand 1 mm bis 5 mm q IR-GaAs-Lumineszenzdiode: Sender q Si-NPN-Fototransistor: Empfanger q Tageslichtsperrfilter q Hoher Kollektor-Emitter-Strom typ. 0.7 mA q Geringe Sattigungsspannung q Sender und Empfanger galvanisch getrennt Anwendungen q Positionsmelder q Endabschalter q Drehzahluberwachung, -regelung q Bewegungssensor Typ Type SFH 9201 SFH 9201-1/2 SFH 9201-2/3 SFH 9201-3/4 Bestellnummer Ordering Code Q62702-P5038 Q62702-P5055 Q62702-P5056 Q62702-P5057 Features q Optimal operating distance 1 mm to 5 mm q IR-GaAs-emitter q Silicon NPN phototransistor detector q Daylight filter against undesired light effects q High collector-emitter current typ. 0.7 mA q Low saturation voltage q Emitter and detector electrically isolated Applications q Position reporting q End position switch q Speed monitoring and regulating q Motion transmitter ICE IF = 10 mA, VCE = 5 V, d = 1 mm mA 0.25 ... 2.00 0.25 ... 0.80 0.40 ... 1.25 0.63 ... 2.00 Semiconductor Group 1 1998-08-25 feo06422 6 Cathode SFH 9201 Grenzwerte Maximum Ratings Bezeichnung Description Sender (GaAs-Diode) Emitter (GaAs diode) Sperrspannung Reverse voltage Vorwartsgleichstrom Forward current Verlustleistung Power dissipation Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage Kollektor-Emitter-Sperrspannung, (t 2 min) Collector-emitter voltage, (t 2 min) Emitter-Kollektor-Sperrspannung Emitter-collector voltage Kollektorstrom Collector current Verlustleistung Total power dissipation Reflexlichtschranke Light reflection switch Lagertemperatur Storage temperature range Umgebungstemperatur Ambient temperature range Elektrostatische Entladung Electrostatic discharge Umweltbedingungen / Environment conditions Symbol Symbol Wert Value Einheit Unit VR IF Ptot 5 50 80 V mA mW VCE VCE VEC IC Ptot 16 30 7 10 100 V mA mW Tstg TA ESD - 40 ... + 85 - 40 ... + 85 2 C KV 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Semiconductor Group 2 1998-08-25 SFH 9201 Lothinweise Soldering conditions Bauform Type Drypack Level acc. to IPSstand. 020 Tauch-, Schwalllotung Dip, wave soldering Reflowlotung Reflow soldering Kolbenlotung Iron soldering Peak temp. Max. time in Peak temp. (solderbath) peak zone (package temp.) n. a. - 245 C Max. time in (Iron temp.) peak zone 10 sec. 300 C < 5 sec. SFH 9201 4 Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Sender (IR-GaAs-Diode) Emitter (IR-GaAs diode) Durchlaspannung Forward voltage IF = 50 mA Sperrstrom Reverse current VR = 5 V Kapazitat Capacitance VR = 0 V, f = 1 MHz Warmewiderstand1) Thermal resistance1) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Kapazitat Capacitance VCE = 5 V, f = 1 MHz Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, EV = 1000 Lx Symbol Symbol Wert Value Einheit Unit VF 1.25 ( 1.65) V IR 0.01 ( 1) A CO 25 pF RthJA 400 K/W CCE 10 pF ICEO 3 ( 200) nA IP 3.5 mA Semiconductor Group 3 1998-08-25 SFH 9201 Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Warmewiderstand1) Thermal resistance1) Reflexlichtschranke Light reflection switch Kollektor-Emitterstrom ICE min. Collector-emitter current ICE typ. Kodak neutral white test card, 90 % Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm Kollektor-Emitter-Sattigungsspannung VCE sat Collector-emitter-saturation voltage Kodak neutral white test card, 90 % Reflexion IF = 10 mA; d = 1 mm; IC = 85 A 1) 1) Symbol Symbol Wert Value 400 Einheit Unit K/W RthJA 0.25 0.70 mA mA 0.15 ( 0.6) V Montage auf PC-Board mit >5 mm2 Padgroe Mounting on pcb with >5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 Semiconductor Group 4 1998-08-25 SFH 9201 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 1 mA1), RL = 1 k) Switching times F RL C VCC Output OHM02258 Bezeichnung Description Einschaltzeit Turn-on time Anstiegzeit Rise time Ausschaltzeit Turn-off time Abfallzeit Fall time 1) 1) Symbol Symbol Wert Value 65 50 55 50 Einheit Unit s s s s tein ton tr taus toff tf IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) Collector current C ---------- = f ( d ) I Cmax I Permissible power dissipation for diode and transistor Ptot = f (TA ) Switching characteristics t = f (RL) TA = 25 oC, IF = 10 mA C max % 80 C 100 OHO02255 160 OHO02260 Total power dissipation 10 3 OHO00785 Ptot mW 120 t s C = 100 A t on Detector 60 80 Emitter 10 2 t off t on 40 t off C = 1 mA 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 4 mm 5 d 0 20 40 60 80 C 100 10 1 -1 10 10 0 TA k RL 10 1 Semiconductor Group 5 1998-08-25 SFH 9201 Max. permissible forward current IF = f (TA) 120 OHO02259 Transistor capacitance (typ.) CCE = f (VCE), TA = 25 oC, f = 1 MHz 50 pF OHO00374 Collector current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection 3.0 OHO00783 F mA 100 C mA 2.5 C CE 40 80 35 30 2.0 60 25 20 1.5 40 15 10 5 1.0 VCE = 5 V 0.5 20 0 0 0 20 40 60 80 C 100 10 -2 10 -1 10 0 TA 10 1 V VCE 10 2 0 0 4 8 12 16 mA 20 F Forward voltage (typ.) of the diode VF = f (T) 1.30 OHO02256 Relative spectral emission of emitter (GaAs) Irel = f () and detector (Si) Srel = f () 100 rel S rel % 80 OHO00786 Output characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 oC 2.0 OHO00781 VF V 1.25 C mA 1.6 1.4 F = 25 mA 1.20 F = 20 mA 10 mA 5 mA 60 F = 20 mA 1.2 1.0 Detector F = 15 mA 1.15 40 0.8 0.6 1.10 20 F = 10 mA 1.05 0.4 0.2 Emitter F = 5 mA 1 -40 -20 0 20 40 60 C T 100 0 700 800 900 1000 nm 1100 0 0.1 10 0 10 1 V VCE Semiconductor Group 6 1998-08-25 |
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