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S289P
Vishay Telefunken
Silicon Darlington Phototransistor
Description
S289P is an extra high sensitive monolithic silicon epitaxial planar Darlington phototransistor in a standard T-1 (o 3 mm) package. The epoxy package itself is an IR filter, spectrally matched to GaAs IR emitters with lp >850nm. A plastic lens provides a wide viewing angle of 30.
Features
D D D D D
Extra high radiant sensitivity Very low temperature drift Standard T-1 (o 3 mm) package with IR filter Wide viewing angle = 30 Suitable for near infrared radiation
94 8396
Applications
Any applications requiring high sensitivity at low light levels e.g. Direct driving of relays and small motors Special light barriers and switches
Absolute Maximum Ratings
Tamb = 25_C Parameter Collector Emitter Voltage Collector Current Peak Collector Current Total Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient Test Conditions Symbol VCEO IC ICM Ptot Tj Tamb Tstg Tsd RthJA Value 40 0.1 1 185 100 -55...+100 -55...+100 260 400 Unit V A A mW C C C C K/W
tp/T = 0.05, tp Tamb 25 C
x
x 10 ms
t
x5s
Document Number 81541 Rev. 2, 20-May-99
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S289P
Vishay Telefunken Basic Characteristics
Tamb = 25_C Parameter Collector Emitter Breakdown Voltage Collector Dark Current Collector Light Current Test Conditions IC = 1 mA VCE = 20 V, E = 0 Ee = 0.3 mW/cm2, l = 950 nm, VCE = 5 V Symbol V(BR)CE
O
Min 40
Typ
Max
Unit V nA mA deg nm nm V
ICEO Ica lp l0.5 VCEsat ton toff
4
10 15 30 920 830...1000 0.75 40 50
200
Angle of Half Sensitivity Wavelength of Peak Sensitivity Range of Spectral Bandwidth Collector Emitter Saturation Ee = 0.3 mW/cm2, Voltage l = 950 nm, IC = 1 mA Turn-On Time VS = 5 V, IC = 5 mA, RL = 100 W Turn-Off Time VS = 5 V, IC = 5 mA, RL = 100 W
1.1
ms ms
Typical Characteristics (Tamb = 25_C unless otherwise specified)
250 P tot - Total Power Dissipation ( mW ) 200 I CEO - Collector Dark Current ( nA ) 105 104 103 102 101 100 0
94 8307
VCE=20V
150 RthJA 100
50 0 20 40 60 80 100 Tamb - Ambient Temperature ( C )
20
94 8231
40
60
80
100
Tamb - Ambient Temperature ( C )
Figure 1. Total Power Dissipation vs. Ambient Temperature
Figure 2. Collector Dark Current vs. Ambient Temperature
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Document Number 81541 Rev. 2, 20-May-99
S289P
Vishay Telefunken
S ( l ) rel - Relative Spectral Sensitivity 60 80 100
94 8519
3.0 I ca rel - Relative Collector Current 2.5 2.0 1.5 1.0 0.5 0 0
94 8232
1.0 0.8 0.6 0.4 0.2 0 700
VCE=5V Ee=0.1mW/cm2 l=950nm
20
40
800
900
1000
1100
Tamb - Ambient Temperature ( C )
l - Wavelength ( nm )
Figure 3. Relative Collector Current vs. Ambient Temperature
100 Ica - Collector Light Current ( mA )
Figure 6. Relative Spectral Sensitivity vs. Wavelength
0 10 20
30
10
S rel - Relative Sensitivity
40 1.0 0.9 0.8 0.7 50 60 70 80
1 VCE=5V l=950nm 0.1
0.01 0.01
94 8233
0.1 Ee - Irradiance (
1 mW / cm2 )
10
94 8520
0.6
0.4
0.2
0
0.2
0.4
0.6
Figure 4. Collector Light Current vs. Irradiance
Figure 7. Relative Radiant Sensitivity vs. Angular Displacement
100 Ica - Collector Light Current ( mA ) Ee=1 mW/cm2
0.5 mW/cm2
l=950nm
10
0.2 mW/cm2 0.1 mW/cm2 0.05 mW/cm2
1 0.1
94 8234
1
10
100
VCE - Collector Emitter Voltage ( V )
Figure 5. Collector Light Current vs. Collector Emitter Voltage
Document Number 81541 Rev. 2, 20-May-99
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S289P
Vishay Telefunken Dimensions in mm
96 12190
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Document Number 81541 Rev. 2, 20-May-99
S289P
Vishay Telefunken Ozone Depleting Substances Policy Statement
It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances.
We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423
Document Number 81541 Rev. 2, 20-May-99
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