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| RB400VA-50 Diodes Schottky barrier diode RB400VA-50 Applications General rectification External dimensions (Unit : mm) 0.170.1 0.05 1.30.05 CATHODEMARK Land size figure (Unit : mm) 1.1 Features 1) Small mold type. (TUMD2) 2) Low IF, Low IR. 3) High reliability. 1.90.1 2.50.2 00.1 0.80.05 0.60.1 0.05 1.30.1 0.04 0.60.1 0.05 0.47 TUMD2 1.450.1 00.1 0.150.03 Structure Construction Silicon epitaxial planar 250 0.03 Taping specifications (Unit : mm) 4.00.1 2.00.05 1.750.1 0.30.04 ROHM : TUMD2 dot (year w eek factory)+day 0.40.1 1.550.1 0.05 0.250.05 3.50.05 8.00.2 1.430.05 4.00.1 1.00.2 0 2.80.05 2.80.05 Absolute maximum ratings (Ta=25C) Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current Forward current surge peak 60Hz1cyc Junction temperature Storage temperature Symbol VRM VR Io IFSM Tj Tstg Limits 50 40 0.5 3 125 -40 to +125 Unit V V A A Electrical characteristics (Ta=25C) Parameter Forward voltage R everse current C apacitance between terminal Symbol VF1 IR1 IR2 Ct1 Ct2 Min. Typ. 125 20 Max. 0.55 30 50 Unit V A A pF pF IF=500mA VR=10V VR=30V VR=0V , f=1MHz VR=10V , f=1MHz Conditions 0.8 0.5 0.90.08 2.0 1/3 RB400VA-50 Diodes Electrical characteristic curves (Ta=25C) 1000 10000 Ta=125 FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA) CAPACITANCE BETWEEN TERMINALS:Ct(pF) 1000 f=1MHz 100 Ta=75 Ta=125 Ta=25 1000 100 10 Ta=25 1 Ta=-25 0.1 0.01 Ta=75 100 10 Ta=-25 1 10 0.1 0 200 400 600 FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS 1 0 5 10 15 20 25 30 35 40 0 5 REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS 10 15 20 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 25 30 520 Ta=25 IF=0.5A n=30pcs 10 9 REVERSE CURRENT:IR(uA) 10 Ta=25 VR=10V n=30pcs 9 REVERSE CURRENT:IR(uA) FORWARD VOLTAGE:VF(mV) 510 8 7 6 5 4 3 2 1 0 AVE:0.510uA 8 7 6 5 4 3 2 1 0 AVE:1.562uA Ta=25 VR=35V n=30pcs 500 490 480 AVE:495.8mV 470 VF DISPERSION MAP IR DISPERSION MAP IR DISPERSION MAP 200 190 180 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 170 160 150 140 130 120 110 100 Ct DISPERSION MAP AVE:117.5pF 22 21 20 19 18 17 16 15 Ct DISPERSION MAP AVE:20.66pF PEAK SURGE FORWARD CURRENT:IFSM(A) CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=25 f=1MHz VR=0V n=10pcs 25 24 23 Ta=25 f=1MHz VR=10V n=10pcs 30 Ifsm 1cyc 20 8.3ms 10 AVE:5.30A 0 IFSM DISRESION MAP 20 Ta=25 IF=0.5A IR=1A Irr=0.25*IR n=10pcs 10 Ifsm PEAK SURGE FORWARD CURRENT:IFSM(A) 10 Ifsm t RESERVE RECOVERY TIME:trr(ns) 15 PEAK SURGE FORWARD CURRENT:IFSM(A) 8 8 8.3ms 6 8.3ms 1cyc 6 10 4 4 5 AVE:9.3ns 0 trr DISPERSION MAP 2 2 0 1 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100 0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100 2/3 RB400VA-50 Diodes 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (/W) Mounted on epoxy board IM=10mA IF=0.2A 1 0.02 300us FORWARD POWER DISSIPATION:Pf(W) 1ms time D=1/2 Sin(180) 100 0.5 DC REVERSE POWER DISSIPATION:P R (W) Rth(j-a) 0.015 0.01 D=1/2 DC 0.005 Sin(180) Rth(j-c) 10 0.001 0.1 10 1000 TIME:t(s) Rth-t CHARACTERISTICS 0 0 0.2 0.4 0.6 0.8 AVERAGE RECTIFIED FORWARD CURRENTIo(A) Io-Pf CHARACTERISTICS 1 0 0 5 10 15 20 REVERSE VOLTAGE:VR(V) VR-P R CHARACTERISTICS 2 0A AVERAGE RECTIFIDE FORWARD CURRENT:Io(A) 2 Io AVERAGE RECTIFIED FORWARD CURRENT:Io(A) 0A 1.5 0V t T Io VR D=t/T VR=20V Tj=125 1.5 0V t DC T VR D=t/T VR=20V Tj=125 1 D=1/2 1 D=1/2 DC 0.5 Sin(180) 0 0 25 50 75 100 AMBIENT TEMPERATURE:Ta() Derating curv e (Io-Ta) 125 0.5 Sin(180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating curv e (Io-Tc) 125 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design. The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.1 |
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