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PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
Rev. 02 -- 5 July 2002 Product data
1. Description
N-channel enhancement mode field-effect power transistor in a plastic package using TrenchMOSTM technology. Product availability: PHP73N06T in SOT78 (TO-220AB) PHB73N06T in SOT404 (D2-PAK).
2. Features
s Fast switching s Very low on-state resistance.
3. Applications
s General purpose switching s Switched mode power supplies.
4. Pinning information
Table 1: Pinning - SOT78 and SOT404, simplified outline and symbol Simplified outline
mb mb
Pin Description 1 2 3 mb gate (g)
Symbol
d
drain (d) source (s) mounting base; connected to drain (d)
[1]
g s
MBB076
2 1
MBK106
3
MBK116
123
SOT78 (TO-220AB)
[1] It is not possible to make connection to pin 2 of the SOT404 package.
SOT404 (D2-PAK)
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
5. Quick reference data
Table 2: VDS ID Ptot Tj RDSon Quick reference data Conditions 25 C Tj 175 C Tmb = 25 C; VGS = 10 V Tmb = 25 C Tj = 25 C; VGS = 10 V; ID = 25 A Typ 12 Max 60 73 149 175 14 Unit V A W C m drain-source voltage (DC) drain current (DC) total power dissipation junction temperature drain-source on-state resistance Symbol Parameter
6. Limiting values
Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDS VDGR VGS ID IDM Ptot Tstg Tj IS ISM EAS drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature operating junction temperature source (diode forward) current (DC) Tmb = 25 C peak source (diode forward) current Tmb = 25 C; pulsed; tp 10 s non-repetitive avalanche energy unclamped inductive load; IAS = 50 A; tp = 0.1 ms; VDD 25 V; RGS = 50 ; VGS = 5 V; starting Tj = 25 C; Tmb = 25 C; VGS = 10 V; Figure 2 and 3 Tmb = 100 C; VGS = 10 V; Figure 2 and 3 Tmb = 25 C; pulsed; tp 10 s; Figure 3 Tmb = 25 C; Figure 1 Conditions 25 C Tj 175 C 25 C Tj 175 C; RGS = 20 k Min -55 -55 Max 60 60 20 73 52 266 166 175 175 73 266 125 Unit V V V A A A W C C A A mJ
Source-drain diode
Avalanche ruggedness
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
2 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
120 Pder (%) 80
03aa16
120 Ider (%) 80
03aa24
40
40
0 0 50 100 150 200 Tmb (C)
0 0 50 100 150 200 Tmb (C)
P tot P der = ---------------------- x 100% P
tot ( 25 C )
VGS 5 V ID I der = ------------------ x 100% I
D ( 25 C )
Fig 1. Normalized total power dissipation as a function of mounting base temperature.
Fig 2. Normalized continuous drain current as a function of mounting base temperature.
103 ID (A)
003aaa083
Limit RDSon = VDS / ID tp = 10 s
102
100 s
1 ms 10 DC 10 ms 100 ms
1 1 10 VDS (V) 102
Tmb = 25 C; IDM is single pulse; VGS = 10V
Fig 3. Safe operating area; continuous and peak drain currents as a function of drain-source voltage.
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
3 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
7. Thermal characteristics
Table 4: Rth(j-mb) Rth(j-a) Thermal characteristics Conditions Min Typ Max Unit 60 50 0.9 K/W K/W K/W thermal resistance from junction to mounting base Figure 4 thermal resistance from junction to ambient SOT78 SOT404 vertical in still air SOT404 minimum footprint; mounted on a PCB Symbol Parameter
7.1 Transient thermal impedance
003aaa084
10 Zth(j-mb) (K/W) 1 = 0.5 0.2 10-1 0.1 0.05 0.02 P 10-2 single pulse tp T 10-3 10-6 10-5 10-4 10-3 10-2 10-1 tp (s)
=
tp T
t
1
Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration.
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
4 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
8. Characteristics
Table 5: Characteristics Tj = 25 C unless otherwise specified Symbol Parameter Static characteristics V(BR)DSS drain-source breakdown voltage VGS(th) gate-source threshold voltage ID = 250 A; VGS = 0 V ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C IDSS drain-source leakage current VDS = 55 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 Tj = 25 C Tj = 175 C Dynamic characteristics Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr Qr total gate charge gate-source charge gate-drain (Miller) charge input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain (diode forward) voltage IS = 25 A; VGS = 0 V; Figure 12 reverse recovery time recovered charge IS = 73 A; dIS/dt = -100 A/s; VGS = -10 V; VR = 30 V VDD = 30 V; RD = 1.2 ; VGS = 5 V; RG = 10 VGS = 0 V; VDS = 25 V; f = 1 MHz; Figure 11 ID = 50 A; VDD = 44 V; VGS = 10 V; Figure 13 54 10 19 421 231 17 79 57 51 0.85 54 0.12 506 317 26 119 80 71 1.2 nC nC nC pF pF ns ns ns ns V ns C 12 14 28 m m 0.05 2 10 500 100 A A nA 2 1 3 4 V V 60 V Conditions Min Typ Max Unit
1848 2464 pF
Source-drain diode
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
5 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
80 ID (A) 60 Tj = 25 C 10 V 8.5 V
003aaa086
80 ID (A) 60 VDS > ID x RDSon
003aa087
7.5 V 6.5 V
6V 40 40
5.5 V 20 5V VGS = 4.5 V 0 0 0.5 1 1.5 VDS (V) 2 0 0 2 4 6 VGS (V) 8 20 175 C Tj = 25 C
Tj = 25 C
Tj = 25 C and 175 C; VDS > ID x RDSon
Fig 5. Output characteristics: drain current as a function of drain-source voltage; typical values.
Fig 6. Transfer characteristics: drain current as a function of gate-source voltage; typical values.
30 Tj = 25 C RDSon (m) 20
003aaa088
2.4 a
03aa28
VGS = 7.5 V 8.5 V 10 V
1.8
1.2
10 0.6
0 0 20 40 60 ID (A) 80
0 -60 0 60 120 Tj (C) 180
Tj = 25 C
R DSon a = --------------------------R DSon ( 25 C )
Fig 7. Drain-source on-state resistance as a function of drain current; typical values.
Fig 8. Normalized drain-source on-state resistance factor as a function of junction temperature.
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
6 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
5 VGS(th) (V) 4 max
03aa32
10-1 ID (A) 10-2
03aa35
3
typ
10-3
min
typ
max
2
min
10-4
1
10-5
0 -60 0 60 120 Tj (C) 180
10-6 0 2 4 VGS (V) 6
ID = 1 mA; VDS = VGS
Tj = 25 C
Fig 9. Gate-source threshold voltage as a function of junction temperature.
Fig 10. Sub-threshold drain current as a function of gate-source voltage.
104
003aaa090
C (pF) Ciss 103
Coss Crss 102 10-1
1
10
VDS (V)
102
VGS = 0 V; f = 1 MHz
Fig 11. Input, output and reverse transfer capacitances as a function of drain-source voltage; typical values.
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
7 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
80 IS (A) 60 VGS = 0 V
003aaa091
10 VGS (V) 8 ID = 50 A Tj = 25 C VDD = 14 V 6 44 V
003aaa092
40 4 20 175 C Tj = 25 C 2
0 0 0.3 0.6 0.9 VSD (V) 1.2
0 0 20 40 QG (nC) 60
Tj = 25 C and 175 C; VGS = 0 V
ID = 50 A; VDD = 14 V and 44 V
Fig 12. Source (diode forward) current as a function of source-drain (diode forward) voltage; typical values.
Fig 13. Gate-source voltage as a function of gate charge; typical values.
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
8 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
9. Package outline
Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB SOT78
E p
A A1 q
D1
mounting base
D
L1(1)
L2 Q
L
b1
1
2
3
b c
e
e
0
5 scale
10 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.5 4.1 A1 1.39 1.27 b 0.9 0.7 b1 1.3 1.0 c 0.7 0.4 D 15.8 15.2 D1 6.4 5.9 E 10.3 9.7 e 2.54 L 15.0 13.5 L1(1) 3.30 2.79 L2 max. 3.0 p 3.8 3.6 q 3.0 2.7 Q 2.6 2.2
Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 REFERENCES IEC JEDEC 3-lead TO-220AB EIAJ SC-46 EUROPEAN PROJECTION ISSUE DATE 00-09-07 01-02-16
Fig 14. SOT78
9397 750 09938 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
9 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
Plastic single-ended surface mounted package (Philips version of D2-PAK); 3 leads (one lead cropped)
SOT404
A E A1 mounting base
D1
D
HD
2
Lp
1
3
b c Q
e
e
0
2.5 scale
5 mm
DIMENSIONS (mm are the original dimensions) UNIT mm A 4.50 4.10 A1 1.40 1.27 b 0.85 0.60 c 0.64 0.46 D max. 11 D1 1.60 1.20 E 10.30 9.70 e 2.54 Lp 2.90 2.10 HD 15.80 14.80 Q 2.60 2.20
OUTLINE VERSION SOT404
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 99-06-25 01-02-12
Fig 15. SOT404 (D2-PAK).
9397 750 09938 (c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
10 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
10. Revision history
Table 6: 02 Revision history CPCN Description Product data; second version; supersedes initial version 12 March 2001. Section 5, 6, 8 Increase in VDS Section 6 "Limiting values" Non-repetitive avalanche ruggedness derating graph removed Section 8 "Characteristics" Forward transconductance graph removed Section 7 "Thermal characteristics" Clarification of thermal resistance table Graphs updated to latest standard. 01 20010312 Product specification. Initial version.
Rev Date 20020705
9397 750 09938
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
11 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
11. Data sheet status
Data sheet status[1] Objective data Preliminary data Product status[2] Development Qualification Definition This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A.
Product data
Production
[1] [2]
Please consult the most recently issued data sheet before initiating or completing a design. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
12. Definitions
Short-form specification -- The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition -- Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information -- Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification.
13. Disclaimers
Life support -- These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes -- Philips Semiconductors reserves the right to make changes, without notice, in the products, including circuits, standard cells, and/or software, described or contained herein in order to improve design and/or performance. Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified.
14. Trademarks
-- TrenchMOS is a trademark of Koninklijke Philips Electronics N.V.
Contact information
For additional information, please visit http://www.semiconductors.philips.com. For sales office addresses, send e-mail to: sales.addresses@www.semiconductors.philips.com.
9397 750 09938
Fax: +31 40 27 24825
(c) Koninklijke Philips Electronics N.V. 2002. All rights reserved.
Product data
Rev. 02 -- 5 July 2002
12 of 13
Philips Semiconductors
PHP73N06T; PHB73N06T
TrenchMOSTM standard level FET
Contents
1 2 3 4 5 6 7 7.1 8 9 10 11 12 13 14 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 1 Quick reference data . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics. . . . . . . . . . . . . . . . . . . 4 Transient thermal impedance . . . . . . . . . . . . . . 4 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 12 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
(c) Koninklijke Philips Electronics N.V. 2002. Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 5 July 2002 Document order number: 9397 750 09938

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