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| IIIIIIIIIIIIIIIIIIIIIII I I I II I I I IIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII I I III I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I I III II IIIIIIIIIIIIIIIIIIIIIII I III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II III I I I I I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II II II IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II II IIIIIIIIIIIIIIIIIIIIIII (1) Indicates JEDEC Registered Data. (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data * Excellent DC Current Gain -- hFE = 30 - 250 @ IC = 100 mAdc * Current-Gain -- Bandwidth Product -- fT = 10 MHz (Min) @ IC = 50 mAdc . . . designed for use in line-operated equipment such as audio output amplifiers; low-current, high-voltage converters; and AC line relays. Plastic NPN Silicon High-Voltage Power Transistor SEMICONDUCTOR TECHNICAL DATA MOTOROLA THERMAL CHARACTERISTICS MAXIMUM RATINGS (1) REV 3 Safe Area Limits are indicated by Figures 3 and 4. Both limits are applicable and must be observed. PD, POWER DISSIPATION (WATTS) Thermal Resistance, Junction to Case Operating and Storage Junction Temperature Range Total Power Dissipation @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous Peak Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage 10 20 30 40 0 25 Characteristic Rating 50 Figure 1. Power Derating 75 100 TC, CASE TEMPERATURE (C) Symbol TJ, Tstg VCEO VCB VEB PD IC IB Symbol 125 JC 2N5655 275 250 - 65 to + 150 2N5656 150 0.25 20 0.16 325 300 0.5 1.0 6.0 6.25 Max 2N5657 375 350 Hg RELAY _C/W Watts W/_C Unit Unit Adc Adc Vdc Vdc Vdc _C Figure 2. Sustaining Voltage Test Circuit + 6.0 V 300 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 - 300 - 350 VOLTS 20 WATTS 1.0 2N5655 2N5656 2N5657 CASE 77-08 TO-225AA TYPE TO SCOPE Order this document by 2N5655/D Y X 50 mH 50 V 200 + - 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII 2N5655 2N5656 2N5657 * Indicates JEDEC Registered Data for 2N5655 Series. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%. (2) fT is defined as the frequency at which |hfe| extrapolates to unity. *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Base-Emitter Voltage (1) (IC = 100 mAdc, VCE = 10 Vdc) DYNAMIC CHARACTERISTICS ON CHARACTERISTICS OFF CHARACTERISTICS 2 Small-Signal Current Gain (IC = 100 mAdc, VCE = 10 Vdc, f = 1.0 kHz) Collector-Emitter Saturation Voltage (1) (IC = 100 mAdc, IB = 10 mAdc) (IC = 250 mAdc, IB = 25 mAdc) (IC = 500 mAdc, IB = 100 mAdc) DC Current Gain (1) (IC = 50 mAdc, VCE = 10 Vdc) (IC = 100 mAdc, VCE = 10 Vdc) (IC = 250 mAdc, VCE = 10 Vdc) (IC = 500 mAdc, VCE = 10 Vdc) Emitter Cutoff Current (VEB = 6.0 Vdc, IC = 0) Collector Cutoff Current (VCB = 275 Vdc, IE = 0) (VCB = 325 Vdc, IE = 0) (VCB = 375 Vdc, IE = 0) Collector Cutoff Current (VCE = 250 Vdc, VEB(off) = 1.5 Vdc) (VCE = 300 Vdc, VEB(off) = 1.5 Vdc) (VCE = 350 Vdc, VEB(off) = 1.5 Vdc) (VCE = 150 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 200 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) (VCE = 250 Vdc, VEB(off) = 1.5 Vdc, TC = 100_C) Collector Cutoff Current (VCE = 150 Vdc, IB = 0) (VCE = 200 Vdc, IB = 0) (VCE = 250 Vdc, IB = 0) Collector-Emitter Breakdown Voltage (IC = 1.0 mAdc, IB = 0) Collector-Emitter Sustaining Voltage (IC = 100 mAdc (inductive), L = 50 mH) 0.02 IC, COLLECTOR CURRENT (AMP) 0.05 0.01 1.0 0.1 0.2 0.5 20 Second Breakdown Limit Thermal Limit @ TC = 25C Bonding Wire Limit Curves apply below rated VCEO 2N5655 2N5656 2N5657 Current-Gain -- Bandwidth Product (2) (IC = 50 mAdc, VCE = 10 Vdc, f = 10 MHz) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 100 kHz) Figure 3. Active-Region Safe Operating Area TJ = 150C 30 40 60 100 200 300 400 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) v dc Characteristic 1.0 ms 500 s v 10 s 600 There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate I C - V CE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 3 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. v 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 2N5655 2N5656 2N5657 Motorola Bipolar Power Transistor Device Data VCEO(sus) V(BR)CEO VCE(sat) Symbol ICBO ICEO IEBO ICEX VBE fT Cob hFE hfe Min 250 300 350 250 300 350 25 30 15 5.0 20 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Max -- 250 -- -- 1.0 1.0 2.5 10 0.1 0.1 0.1 1.0 1.0 1.0 0.1 0.1 0.1 25 10 10 10 10 -- -- -- -- -- -- -- -- mAdc mAdc Adc Adc MHz Unit Vdc Vdc Vdc Vdc -- pF -- 2N5655 2N5656 2N5657 300 200 hFE , DC CURRENT GAIN TJ = +150C +100C + 25C VCE = 10 V VCE = 2.0 V 100 70 50 30 20 - 55C 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 IC, COLLECTOR CURRENT (mA) 70 100 200 300 500 Figure 4. Current Gain 1.0 300 200 TJ = + 25C Cib C, CAPACITANCE (pF) 100 70 50 30 20 Cob 0.8 V, VOLTAGE (VOLTS) VBE(sat) @ IC/IB = 10 VBE @ VCE = 10 V 0.6 0.4 VCE(sat) @ IC/IB = 10 0.2 IC/IB = 5.0 0 10 20 50 100 200 300 30 IC, COLLECTOR CURRENT (mA) 500 TJ = + 25C 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 VR, REVERSE VOLTAGE (VOLTS) 50 100 Figure 5. "On" Voltages Figure 6. Capacitance 10 5.0 2.0 1.0 t, TIME ( s) 0.5 0.2 0.1 0.05 0.02 0.01 1.0 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 500 td tr IC/IB = 10 VCC = 300 V, VBE(off) = 2.0 V (2N5656, 2N5657, only) VCC = 100 V, VBE(off) = 0 V t, TIME ( s) 10 5.0 IC/IB = 10 2.0 1.0 0.5 VCC = 300 V (Type 2N5656, 2N5657, only) 2.0 5.0 10 20 50 100 IC, COLLECTOR CURRENT (mA) 200 tf ts VCC = 100 V 0.2 0.1 1.0 500 Figure 7. Turn-On Time Figure 8. Turn-Off Time Motorola Bipolar Power Transistor Device Data 3 2N5655 2N5656 2N5657 PACKAGE DIMENSIONS -B- U Q F M C NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- -A- 123 H K V G S D 2 PL 0.25 (0.010) M J R 0.25 (0.010) A M A M M B M B M STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 4 Motorola Bipolar Power Transistor Device Data *2N5655/D* 2N5655/D |
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