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1SMBXXXAT3 Series
Zener Transient Voltage Suppressors
GENERAL DATA IS APPLICABLE TO ALL SERIES IN THIS GROUP
The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor's exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications.
Specification Features: http://onsemi.com
PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 5.0-170 VOLTS 600 WATT PEAK POWER
* * * * * * *
Standard Zener Breakdown Voltage Range -- 6.4 to 200 V Stand-off Voltage Range -- 5 to 170 V Peak Power -- 600 Watts @ 1 ms Maximum Clamp Voltage @ Peak Pulse Current Low Leakage < 5 A Above 10 V UL Recognition Response Time is Typically < 1 ns
SMB PLASTIC CASE 403A
Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are
ORDERING INFORMATION
Device SMBXXXAT3 Package SMB Shipping Tape and Reel 2500 Units/Reel
readily solderable POLARITY: Cathode indicated by molded polarity notch. When operated in zener mode, will be positive with respect to anode MOUNTING POSITION: Any LEADS: Modified L-Bend providing more contact area to bond pad
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value.
260C for 10 Seconds
WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seremban, Malaysia
MAXIMUM RATINGS
Rating Peak Power Dissipation (1) @ TL 25C Forward Surge Current (2) @ TA = 25C Thermal Resistance from Junction to Lead (typical) Operating and Storage Temperature Range
NOTES: 1. Nonrepetitive current pulse per Figure 2 and derated above TA = 25C per Figure 3. NOTES: 2. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
Symbol PPK IFSM RqJL TJ, Tstg
Value 600 100 25 - 55 to +150
Unit Watts Amps C/W C
(c) Semiconductor Components Industries, LLC, 1999
1
December, 1999 - Rev. 2
Publication Order Number: 1SMB5.0AT3/D
1SMBXXXAT3 Series
ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted).
Breakdown Voltage* Reverse R Stand Off Voltage Stand-Off VR Volts (1) VBR @ IT Volts Min mA Maximum Mi Clamping Voltage VC @ Ipp Volts Peak Pulse Current P lse C rrent (See Figure 2) Ipp{ Amps Maximum Reverse L k R Leakage @ VR IR A
Device{{
Device Marking
1SMB5.0AT3 1SMB6.0AT3 1SMB6.5AT3 1SMB7.0AT3
1SMB7.5AT3 1SMB8.0AT3 1SMB8.5AT3 1SMB9.0AT3 1SMB10AT3 1SMB11AT3 1SMB12AT3 1SMB13AT3 1SMB14AT3 1SMB15AT3 1SMB16AT3 1SMB17AT3 1SMB18AT3 1SMB20AT3 1SMB22AT3 1SMB24AT3 1SMB26AT3 1SMB28AT3 1SMB30AT3 1SMB33AT3 1SMB36AT3 1SMB40AT3 1SMB43AT3 1SMB45AT3 1SMB48AT3 1SMB51AT3 1SMB54AT3 1SMB58AT3 1SMB60AT3 1SMB64AT3 1SMB70AT3 1SMB75AT3 1SMB78AT3 1SMB85AT3 1SMB90AT3 1SMB100AT3 1SMB110AT3 1SMB120AT3 1SMB130AT3 1SMB150AT3 1SMB160AT3 1SMB170AT3
5.0 6.0 6.5 7.0
7.5 8.0 8.5 9.0 10 11 12 13 14 15 16 17 18 20 22 24 26 28 30 33 36 40 43 45 48 51 54 58 60 64 70 75 78 85 90 100 110 120 130 150 160 170
6.40 6.67 7.22 7.78
8.33 8.89 9.44 10.0 11.1 12.2 13.3 14.4 15.6 16.7 17.8 18.9 20.0 22.2 24.4 26.7 28.9 31.1 33.3 36.7 40.0 44.4 47.8 50.0 53.3 56.7 60.0 64.4 66.7 71.1 77.8 83.3 86.7 94.4 100 111 122 133 144 167 178 189
10 10 10 10
1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0 1.0
9.2 10.3 11.2 12.0
12.9 13.6 14.4 15.4 17.0 18.2 19.9 21.5 23.2 24.4 26.0 27.6 29.2 32.4 35.5 38.9 42.1 45.4 48.4 53.3 58.1 64.5 69.4 72.7 77.4 82.4 87.1 93.6 96.8 103 113 121 126 137 146 162 177 193 209 243 259 275
65.2 58.3 53.6 50.0
46.5 44.1 41.7 39.0 35.3 33.0 30.2 27.9 25.8 24.0 23.1 21.7 20.5 18.5 16.9 15.4 14.2 13.2 12.4 11.3 10.3 9.3 8.6 8.3 7.7 7.3 6.9 6.4 6.2 5.8 5.3 4.9 4.7 4.4 4.1 3.7 3.4 3.1 2.9 2.5 2.3 2.2
800 800 500 200
100 50 10 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0 5.0
KE KG KK KM
KP KR KT KV KX KZ LE LG LK LM LP LR LT LV LX LZ ME MG MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR
Devices listed in bold, italic are ON Semiconductor Preferred devices.
Note 1: A transient suppressor is normally selected according to the reverse "Stand Off Voltage" (VR) which should be equal to or greater than the DC or continuous peak operating voltage level. * * VBR measured at pulse test current IT at an ambient temperaure of 25C.
{{ Surge current waveform per Figure 2 and derate per Figure 3 of the General Data -- 600 Watt at the beginning of this group. {{ T3 suffix designates tape and reel of 2500 units.
ABBREVIATIONS AND SYMBOLS VR Stand Off Voltage. Applied reverse voltage to assure a non-conductive condition (See Note 1). V(BR)min This is the minimum breakdown voltage the device will exhibit and is used to assure that conduction does not occur prior to this voltage level at 25C. VC Maximum Clamping Voltage. The maximum peak voltage appearing across the transient suppressor when
IPP PP IR
subjected to the peak pusle current in a one millisecond time interval. The peak pulse voltages are the combination of voltage rise due to both the series resistance and thermal rise. Peak Pulse Current -- See Figure 2 Peak Pulse Power Reverse Leakage
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1SMBXXXAT3 Series
100 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 2 10 tr 100 VALUE (%) PEAK VALUE - IRSM PULSE WIDTH (tP) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 50% OF IRSM. tr 10 s
PP, PEAK POWER (kW)
1
50 tP
I HALF VALUE - RSM 2
0.1
0.1 s
1 s
10 s
100 s
1 ms
10 ms
0
0
1
2 t, TIME (ms)
3
4
tP, PULSE WIDTH
Figure 1. Pulse Rating Curve
160 PEAK PULSE DERATING IN % OF PEAK POWER OR CURRENT @ T = 25 C A 140 120 100 80 60 40 20 0 0 25 50 75 100 125 150 Vin
Figure 2. Pulse Waveform
TYPICAL PROTECTION CIRCUIT
Zin
LOAD
VL
TA, AMBIENT TEMPERATURE (C)
Figure 3. Pulse Derating Curve
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1SMBXXXAT3 Series
APPLICATION NOTES
RESPONSE TIME
In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 5. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < 1 ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout,
minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Zin is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation.
DUTY CYCLE DERATING
The data of Figure 1 applies for non-repetitive conditions and at a lead temperature of 25C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 25C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 10 ms pulse has a higher derating factor than the 10 s pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure 1 for the same pulse, the results follow the expected trend.
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1SMBXXXAT3 Series
OVERSHOOT DUE TO INDUCTIVE EFFECTS Vin (TRANSIENT) VL VL
V
Vin (TRANSIENT)
V
Vin td tD = TIME DELAY DUE TO CAPACITIVE EFFECT t
t
Figure 4.
Figure 5.
1 0.7 0.5 DERATING FACTOR 0.3 0.2 0.1 0.07 0.05 0.03 0.02 10 s 0.01 0.1 0.2 0.5 1 2 5 10 D, DUTY CYCLE (%) 20 50 100 100 s PULSE WIDTH 10 ms
1 ms
Figure 6. Typical Derating Factor for Duty Cycle
UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #116110. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category.
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1SMBXXXAT3 Series
OUTLINE DIMENSIONS
Transient Voltage Suppressors - Surface Mounted
600 Watt Peak Power
0.089 2.261 S A 0.108 2.743
D
B
0.085 2.159
inches mm
SMB Footprint
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES MIN MAX 0.160 0.180 0.130 0.150 0.075 0.095 0.077 0.083 0.0020 0.0060 0.006 0.012 0.030 0.050 0.020 REF 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59
C
K
P
J
H
DIM A B C D H J K P S
CASE 403A PLASTIC
(Refer to Section 10 of the TVS/Zener Data Book (DL150/D) for Surface Mount, Thermal Data and Footprint Information.)
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1SMBXXXAT3 Series
Notes
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1SMBXXXAT3 Series
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
North America Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (M-F 2:30pm to 5:00pm Munich Time) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (M-F 2:30pm to 5:00pm Toulouse Time) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (M-F 1:30pm to 5:00pm UK Time) Email: ONlit@hibbertco.com ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong 800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-8549 Phone: 81-3-5487-8345 Email: r14153@onsemi.com Fax Response Line: 303-675-2167 800-344-3810 Toll Free USA/Canada ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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1N6267A/D

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