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| MICROCIRCUIT DATA SHEET MNLM6165-X REV 2A1 HIGH SPEED OPERATIONAL AMPLIFIER General Description The LM6165 high-speed amplifier exhibits an excellent speed-power product in delivering 300 V/uS and 725 MHz GBW (stable down to gains as low as +25) with only 5 mA of supply current. Further, power savings and application convenience are possible by taking advantage of the wide dynamic range in operating supply voltage which extends all the way down to +5V. This amplifier is built with National's VIP[TM] (Vertically Integrated PNP) proces which provides fast PNP transistors that are true complements to the already fast NPN devices. This advanced junction-isolated process delivers high speed performance without the need for complex and expensive dielectric isolation. Original Creation Date: 08/03/95 Last Update Date: 06/17/98 Last Major Revision Date: 05/27/98 Industry Part Number LM6165 NS Part Numbers LM6165J-QMLV* LM6165J/883** LM6165WG-QMLV*** LM6165WG/883**** Prime Die LM6165B Controlling Document See Features Page Processing MIL-STD-883, Method 5004 Subgrp Description 1 2 3 4 5 6 7 8A 8B 9 10 11 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 Quality Conformance Inspection MIL-STD-883, Method 5005 1 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Features High slew rate 300 V/uS High GBW product 725MHz Low supply current 5mA Fast settling 80nS to 0.1% Low differential gain <0.1% Low differential phase <0.1 degrees Wide supply range 4.75V to 32V Stable with unlimited capacitive load SMD : 5962-8962501VPA*, PA**, VXA***, XA**** Applications Video amplifier Wide-bandwidth signal conditioning Radar Sonar 2 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET (Absolute Maximum Ratings) (Note 1) Supply Voltage (V+ - V-) Differential Input Voltage Range (Note 4) Common-Mode Voltage Range (Note 6) (V+ - 0.7V) to (V- - 7V) Output Short Circuit to Gnd (Note 3) Continuous Power Dissipation (Note 2) 400mW Soldering Information (Soldering, 10 seconds) Storage Temperature Range Maximum Junction Temperature 150 C Thermal Resistance ThetaJA CERDIP CERAMIC SOIC ThetaJC CERDIP CERAMIC SOIC Package Weight (Typical) CERDIP CERAMIC SOIC ESD Tolerance (Note 4, 5) 260 C -65 C to +150 C 36V +8V (Still Air) (500LF/Min Air flow) (Still Air) (500LF/Min Air flow) 113 51 228 140 C/W C/W C/W C/W 21 C/W 21 C/W TBD 220mg +500V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is Pdmax - (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150 C. In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage results in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially Vio, Ios, and Noise). The average voltage that the weakest pin combinations (those involving Pin 2 or Pin 3) can withstand and still conform to the datasheet limits. The test circuit used consists of the human body model of 100pF in series with 1500 Ohms. The voltage between V+ and either input pin must not exceed 36V. Note 2: Note 3: Note 4: Note 5: Note 6: 3 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Recommended Operating Conditions (Note 1) Temperature Range -55 C < TA < +125 C Supply Voltage Range 4.75V to 32V Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. 4 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +15V, Vcm = 0V, Rl > 100K Ohms, Rs = 10K Ohms. SYMBOL Vio PARAMETER Input Offset Voltage Input Bias Current Input Offset Current Positive Common-Mode Voltage Range Vcc = +15V Vcc = +15V Vcc = +5V 2 2 -Vcmr Negative Common-Mode Voltage Range Vcc = +15V Vcc = +15V Vcc = +5V 2 2 CMRR Common-Mode Rejection Ratio Power Supply Rejection Ratio Output Short Circuit Current -13.4V < Vcm < 13.9V -13.2V < Vcm < 13.8V PSRR +10V < Vcc < +16V +10V < Vcc < +16V Ios Source 88 82 88 82 -30 -20 Sink 30 20 Icc Supply Current 6.5 6.8 Avs Large Signal Voltage Gain Positive Voltage Swing Vout = +10V, Rl = 2K Ohms Vout = +10V, Rl = 2K Ohms +Vop Vcc = +15V, Rl = 2K Ohms Vcc = +15V, Rl = 2K Ohms Vcc = +5V, Rl = 2K Ohms 1 1 7.5 5.0 13.5 13.3 3.5 3.3 CONDITIONS NOTES PINNAME MIN -3 -4 Iib -3 -6 Iio -350 -800 +Vcmr 13.9 13.8 3.9 3.8 -13.4 -13.2 1.6 1.8 3 4 3 6 350 800 MAX UNIT mV mV uA uA nA nA V V V V V V V V dB dB dB dB mA mA mA mA mA mA SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 1 2, 3 V/mV 1 V/mV 2, 3 V V V V 1 2, 3 1 2, 3 5 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +15V, Vcm = 0V, Rl > 100K Ohms, Rs = 10K Ohms. SYMBOL -Vop PARAMETER Negative Voltage Swing CONDITIONS Vcc = +15V, Rl = 2K Ohms Vcc = +15V, Rl = 2K Ohms Vcc = +5V, Rl = 2K Ohms NOTES PINNAME MIN MAX -13.0 -12.7 1.7 2.0 UNIT V V V V SUBGROUPS 1 2, 3 1 2, 3 AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: Vcc = +15V, Vcm = 0V, Rl > 100K Ohms, Rs = 10K Ohms. Gbw Gain Bandwidth Product Slew Rate f = 20Mhz 575 350 +Sr Output step = -10V to +10V, Av = +25, Vin = 0.8V step Output step = +10V to -10V, Av = +25, Vin = 0.8V step 10V step to 0.1% , Av = -25, Rl = 2K Ohms 200 180 -Sr Slew Rate 200 180 ts Setting Time 250 275 MHz MHz 4 5, 6 V/uS 4 V/uS 5, 6 V/uS 4 V/uS 5, 6 nS nS 9 10, 11 DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: Vcc = +15V, Vcm = 0V, Rl > 100K Ohms, Rs = 10K Ohms. "Delta calculations performed on QMLV devices at Group B, Subgroup 5 ONLY" Vio Iib Iio CMRR Input Offset Voltage Input Bias Current Input Offset Current Common-Mode Rejection Ratio Note 1: Note 2: -13.4V < Vcm < 13.9V -0.6 -0.5 -35 -5 +0.6 +0.5 +35 +5 mV uA nA dB 1 1 1 1 Voltage gain is the total output swing (20V) divided by the signal required to produce that swing. For single supply operation, the following conditions apply: V+ = 5V, V- = 0V, Vcm = 2.5V, Vout = 2.5V. Vio adjust pins are each connected to V- to realize maximum output swing. This connection will degrade Vio. 6 MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Graphics and Diagrams GRAPHICS# 05885HRA4 06190HRA3 J08ARL P000249A P000260A WG10ARC CERDIP (J), 8 LEAD (B/I CKT) CERPACK (W, WG), 10LD (B/I CKT) CERDIP (J), 8 LEAD (P/P DWG) CERDIP (J), 8 LEAD (PINOUT) CERAMIC SOIC (WG), 10 LEAD (PINOUT) CERAMIC SOIC (WG), 10 LEAD (P/P DWG) DESCRIPTION See attached graphics following this page. 7 N N MNLM6165-X REV 2A1 MICROCIRCUIT DATA SHEET Revision History Rev 1A1 ECN # Rel Date Originator Barbara Lopez Changes Update MDS: MNLM6165-X Rev. 0A0 to MNLM6165-X Rev. 1A1. Deleted E and W-SMD ID. Added WG ID. Added SMD number for WG package. Added WG package to thermal resistance, updated note 6, deleted note 7, added power dissipation limit and package weights to Absolute section. Updated Subgroups to match SMD, added note 2 to Electrical section. Added MKT, Burn-In CKT and Pinouts for all packages. Updated MDS: MNLM6165-X, Rev. 1A1 to MNLM6165-X, Rev. 2A1. Package Weight for Ceramic SOIC, Drift Section and QMLV reference. Arranged SMD references in Features section to match Main Table. Removed CERPACK references for low sales volume. M0002854 06/17/98 2A1 M0002907 06/17/98 Rose Malone 8 |
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