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| LF451 Wide-Bandwidth JFET-Input Operational Amplifier December 1995 LF451 Wide-Bandwidth JFET-Input Operational Amplifier General Description The LF451 is a low-cost high-speed JFET-input operational amplifier with an internally trimmed input offset voltage (BIFET IITM technology) The device requires a low supply current and yet maintains a large gain bandwidth product and a fast slew rate In addition well matched high voltage JFET input devices provide very low input bias and offset currents The LF451 is pin compatible with the standard LM741 allowing designers to upgrade the overall performance of existing designs The LF451 may be used in such applications as high-speed integrators fast D A converters sample-and-hold circuits and many other circuits requiring low input bias current high input impedance high slew rate and wide bandwidth Features Y Y Y Y Y Y Y Y Y Y Internally trimmed offset voltage 5 0 mV (max) Low input bias current 50 pA (typ) Low input noise current 0 01 pA 0Hz (typ) Wide gain bandwidth 4 MHz (typ) High slew rate 13 V ms (typ) Low supply current 3 4 mA (max) High input impedance 1012X (typ) k 0 02% (typ) Low total harmonic distortion AV e 10 RL e 10k VO e 20 Vp- p f e 20 Hz - 20 kHz Low 1 f noise corner 50 Hz (typ) Fast settling time to 0 01% 2 ms (typ) Connection Diagram S O Package Typical Connection TL H 9660 - 2 Top View Order Number LF451CM See NS Package Number M08A TL H 9660 - 1 Simplified Schematic TL H 9660 - 3 BI-FETTM is a trademark of National Semiconductor Corporation C1995 National Semiconductor Corporation TL H 9660 RRD-B30M125 Printed in U S A Absolute Maximum Ratings (Note 1) If Military Aerospace specified devices are required please contact the National Semiconductor Sales Office Distributors for availability and specifications Supply Voltage (V a b Vb) Input Voltage Range Differential Input Voltage (Note 2) Junction Temperature (TJ MAX) Output Short Circuit Duration Power Dissipation (Note 3) Vb 36V s VIN s V a g30V ESD Tolerance Soldering Information (Note 5) SO Package Vapor Phase (60 sec) Infrared (15 sec) TBD 215 C 220 C Operating Ratings (Note 1) Temperature Range LF451CM Junction Temperature (TJ max) Supply Voltage (V a b Vb) V a e a 15V and TMIN s TA s TMAX 0 C s TA s a 70 C 125 C 10V to 32V Vb e b15V Bold- 150 C Continuous 500 mW DC Electrical Characteristics The following specifications apply for face limits apply for TMIN to TMAX all other limits TA e TJ e 25 C Symbol Parameter Conditions LF451CM Typical (Note 6) 03 25 50 1012 200 g13 5 Tested Limit (Note 7) 5 100 Design Limit (Note 8) Units VOS IOS IB RIN AVOL VO VCM CMRR PSRR IS Maximum Input Offset Voltage Maximum Input Offset Current Maximum Input Bias Current Input Resistance Minimum Large Signal Voltage Gain Minimum Output Voltage Swing Minimum Input Common Mode Voltage Range Minimum Common-Mode Rejection Ratio Minimum Supply Voltage Rejection Ratio Maximum Supply Current RS e 10 kX (Note 10) (Notes 9 10) (Notes 9 10) TJ e 25 C VO e g10V RL e 2 kX (Note 10) RL e 10k TJ e 25 C TJ e 70 C TJ e 25 C TJ e 70 C mV 2 pA nA pA nA X 200 4 50 g12 25 g12 V mV V V V dB dB mA a 14 5 b 11 5 a 11 b 11 a 11 b 11 RS s 10 kX (Note 11) 100 100 80 80 34 80 80 34 AC Electrical Characteristics The following specifications apply for V a e a 15V and Vb e b15V Boldface limits apply for TMIN to TMAX all other limits TA e TJ e 25 C LF451CM Symbol Parameter Conditions Typical (Note 6) 13 4 25 0 01 Tested Limit (Note 7) 8 27 Design Limit (Note 8) Units SR GBW en in Slew Rate Minimum Gain-Bandwidth Product Equivalent Input Noise Voltage Equivalent Input Noise Current AV e a 1 f e 100 kHz RS e 100X f e 1 kHz RS e 100X f e 1 kHz V ms MHz nV 0Hz pA 0Hz Note 1 Absolute Maximum Ratings indicate limits beyond which damage to the device may occur DC and AC electrical specifications do not apply when operating the device beyond its specified operating ratings Note 2 When the input voltage exceeds the power supplies the current should be limited to 1 mA Note 3 The maximum power dissipation must be derated at elevated temperatures and is dictated by TJ MAX iJA and the ambient temperature TA The maximum allowable power dissipation at any temperature is PD e (TJ MAX b TA) iJA or the number given in the Absolute Maximum Ratings whichever is lower For guaranteed operation TJ max e 125 C The typical thermal resistance (iJA) of the LF451CM when board-mounted is 170 C W Note 5 See AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' (Appendix D) for other methods of soldering surface mount devices Note 6 Typicals are at TJ e 25 C and represent most likely parametric norm 2 Note 7 Tested limits are guaranteed to National's AOQL (Average Outgoing Quality Level) Note 8 Design limits are guaranteed to National's AOQL but not 100% tested Note 9 The input bias currents are junction leakage currents which approximately double for every 10 C increase in the junction temperature TJ Due to limited production test time the input bias currents are correlated to junction temperature In normal operation the junction temperature rises above the ambient temperature as a result of internal power dissipation PD TJ e TA a iJAPD where iJA is the thermal resistance from junction to ambient Note 10 VOS IB AVOL and IOS are measured at VCM e 0V Note 11 Supply voltage rejection ratio is measured for both supply magnitudes increasing or decreasing simultaneously in accordance with common practice Typical Performance Characteristics Distortion vs Frequency Undistorted Output Voltage Swing Open Loop Frequency Response Common-Mode Rejection Ratio Power Supply Rejection Ratio Equivalent Input Noise Voltage Open Loop Voltage Gain (V V) Output Impedance Inverter Settling Time TL H 9660 - 5 3 Typical Performance Characteristics Input Bias Current (Continued) Supply Current Input Bias Current Positive Common-Mode Input Voltage Limit Negative Common-Mode Input Voltage Limit Positive Current Limit Negative Current Limit Voltage Swing Output Voltage Swing Gain Bandwidth Bode Plot Slew Rate TL H 9660 - 4 4 Pulse Response Small Signal Inverting Small Signal Non-Inverting TL H 9660 - 6 TL H 9660 - 7 Large Signal Inverting Large Signal Non-Inverting TL H 9660 - 8 TL H 9660 - 9 Current Limit (RL e 100X) TL H 9660 - 10 Application Hints The LF451CM is an op amp with an internally trimmed input offset voltage and JFET input devices (BI-FET II) These JFETs have large reverse breakdown voltages from gate to source and drain eliminating the need for clamps across the inputs Therefore large differential input voltages can easily be accommodated without a large increase in input current The maximum differential input voltage is independent of the supply voltages However neither of the input voltages should be allowed to exceed the negative supply as this will cause large currents to flow which can result in a destroyed unit Exceeding the negative common-mode limit with the non-inverting input or with both inputs will force the output to a high state potentially causing a reversal of phase to the output In neither case does a latch occur since raising the input back within the common-mode range again puts the input stage and thus the amplifier in a normal operating mode 5 Application Hints (Continued) Exceeding the positive common-mode limit on a single input will not change the phase of the output however if both inputs exceed the limit the output of the amplifier will be forced to a high state The amplifier will operate with a common-mode input voltage equal to the positive supply however the gain bandwidth and slew rate may be decreased in this condition When the negative common-mode voltage swings to within 3V of the negative supply an increase in input offset voltage may occur The LF451 is biased by a zener reference which allows normal circuit operation on g4V power supplies Supply voltages less than these may result in lower gain bandwidth and slew rate The LF451 will drive a 2 kX load resistance to g10V over the full temperature range of 0 C to a 70 C If the amplifier is forced to drive heavier load currents however an increase in input offset voltage may occur on the negative voltage swing and finally reach an active current limit on both positive and negative swings Precautions should be taken to ensure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit As with most amplifiers care should be taken with lead dress component placement and supply decoupling in order to ensure stability For example resistors from the output to an input should be placed with the body close to the input to minimize ``pick-up'' and maximize the frequency of the feedback pole by minimizing the capacitance from the input to ground A feedback pole is created when the feedback around any amplifier is resistive The parallel resistance and capacitance from the input of the device (usually the inverting input) to AC ground set the frequency of the pole In many instances the frequency of this pole is much greater than the expected 3 dB frequency of the closed loop gain and consequently there is negligible effect on stability margin However if the feedback pole is less than approximately 6 times the expected 3 dB frequency a lead capacitor should be placed from the output to the input of the op amp The value of the added capacitor should be such that the RC time constant of this capacitor and the resistance it parallels is greater than or equal to the original feedback pole time constant The benefit of the S O package results from its very small size It follows however that the die inside the S O package is less protected from external physical forces than a die in a standard DIP would be because there is so much less plastic in the S O Therefore not following certain precautions when board mounting the LF451CM can put mechanical stress on the die lead frame and or bond wires This can cause shifts in the LF451CM's parameters even causing them to exceed limits specified in the Electrical Characteristics For recommended practices in LF451CM surface mounting refer to Application Note AN-450 ``Surface Mounting Methods and Their Effect on Product Reliability'' and to Section 6 ``Surface Mount'' found in any Rev 1 Linear Databook volume Detailed Schematic TL H 9660 - 11 6 7 LF451 Wide-Bandwidth JFET-Input Operational Amplifier Physical Dimensions inches (millimeters) Lit 106161 Small Outline Package (M) Order Number LF451CM NS Package Number M08A LIFE SUPPORT POLICY NATIONAL'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF NATIONAL SEMICONDUCTOR CORPORATION As used herein 1 Life support devices or systems are devices or systems which (a) are intended for surgical implant into the body or (b) support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in a significant injury to the user National Semiconductor Corporation 1111 West Bardin Road Arlington TX 76017 Tel 1(800) 272-9959 Fax 1(800) 737-7018 2 A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system or to affect its safety or effectiveness National Semiconductor Europe Fax (a49) 0-180-530 85 86 Email cnjwge tevm2 nsc com Deutsch Tel (a49) 0-180-530 85 85 English Tel (a49) 0-180-532 78 32 Fran ais Tel (a49) 0-180-532 93 58 Italiano Tel (a49) 0-180-534 16 80 National Semiconductor Hong Kong Ltd 13th Floor Straight Block Ocean Centre 5 Canton Rd Tsimshatsui Kowloon Hong Kong Tel (852) 2737-1600 Fax (852) 2736-9960 National Semiconductor Japan Ltd Tel 81-043-299-2309 Fax 81-043-299-2408 National does not assume any responsibility for use of any circuitry described no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications |
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