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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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The RF MOSFET Line
RF Power Field Effect Transistor
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of this device make it ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. * Typical Single - Carrier N - CDMA Performance @ 880 MHz, VDD = 26 Volts, IDQ = 600 mA, Pout = 14 Watts Avg., IS - 95 CDMA (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Power Gain -- 17.8 dB Drain Efficiency -- 30% ACPR @ 750 kHz Offset -- - 47 dBc @ 30 kHz Bandwidth * Integrated ESD Protection * Lead - Free Terminations, 200C Capable Plastic Package * Designed for Maximum Gain and Insertion Phase Flatness * Capable of Handling 10:1 VSWR, @ 26 Vdc, 880 MHz, 70 Watts CW Output Power * Characterized with Series Equivalent Large - Signal Impedance Parameters * In Tape and Reel. R1 Suffix = 500 Units per 24 mm, 13 inch Reel. MAXIMUM RATINGS
Rating Drain - Source Voltage Gate - Source Voltage Total Device Dissipation @ TC = 25C Derate above 25C Storage Temperature Range Operating Junction Temperature
N - Channel Enhancement - Mode Lateral MOSFET
MRF5S9070NR1
880 MHz, 70 W, 26 V LATERAL N - CHANNEL RF POWER MOSFET
CASE 1265- 08, STYLE 1 TO - 270 - 2 PLASTIC
Symbol VDSS VGS PD Tstg TJ
Value 68 - 0.5, + 15 224 1.28 - 65 to +150 200
Unit Vdc Vdc W W/C C C
THERMAL CHARACTERISTICS
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 70 W CW Case Temperature 80C, 14 W CW Symbol RJC Value (1) 0.86 0.99 Unit C/W
ESD PROTECTION CHARACTERISTICS
Test Conditions Human Body Model Machine Model Charge Device Model Class 2 (Minimum) A (Minimum) 4 (Minimum)
(1) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf . Select Documentation/Application Notes - AN1955. NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed.
REV 1
MOTOROLA RF Motorola, Inc. 2004 DEVICE DATA
MRF5S9070NR1 1
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
Characteristic OFF CHARACTERISTICS Zero Gate Voltage Drain Leakage Current (VDS = 68 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 26 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = 10 Vdc, ID = 200 A) Gate Quiescent Voltage (VDS = 26 Vdc, ID = 600 mAdc) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 1.0 Adc) Forward Transconductance (VDS = 10 Vdc, ID = 4 Adc) DYNAMIC CHARACTERISTICS Input Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Reverse Transfer Capacitance (VDS = 26 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Ciss Coss Crss -- -- -- 126 34 1.37 -- -- -- pF pF pF VGS(th) VGS(Q) VDS(on) gfs 2 -- -- -- 2.7 3.7 0.18 4.7 4 -- 0.22 -- Vdc Vdc Vdc S IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) VDD = 26 Vdc, Pout = 14 W Avg. N - CDMA, IDQ = 600 mA, f = 880 MHz, Single - Carrier N - CDMA, 1.2288 MHz Channel Bandwidth Carrier, Peak/Avg. Ratio = 9.8 dB @ 0.01% Probability on CCDF Power Gain Drain Efficiency Adjacent Channel Power Ratio (750 kHz Offset, 30 kHz Bandwidth) Input Return Loss Gps D ACPR IRL 17 29 -- -- 17.8 30 - 47 - 19 -- -- - 45 -9 dB % dBc dB
TYPICAL GSM CW PERFORMANCE (In Motorola GSM Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, Pout = 60 W, IDQ = 400 mA, f = 921 - 960 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 940 MHz) Gps D IRL P1dB -- -- -- -- 16.4 62 - 12 68 -- -- -- -- dB % dB W
TYPICAL GSM EDGE PERFORMANCE (In Motorola GSM EDGE Test Fixture Optimized for 921 - 960 MHz, 50 hm system) VDD = 26 Vdc, Pout = 25 W Avg., IDQ = 400 mA, f = 921 - 960 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 44 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc (continued)
MRF5S9070NR1 2
MOTOROLA RF DEVICE DATA
ELECTRICAL CHARACTERISTICS -- continued (TC = 25C unless otherwise noted)
TYPICAL GSM CW PERFORMANCE (In Motorola GSM Test Fixture Optimized for 865 - 895 MHz, 50 hm system) VDD = 26 Vdc, Pout = 60 W, IDQ = 400 mA, f = 865 - 895 MHz Power Gain Drain Efficiency Input Return Loss Pout @ 1 dB Compression Point (f = 880 MHz) Gps D IRL P1dB -- -- -- -- 16.4 59 - 15 71 -- -- -- -- dB % dB W
TYPICAL GSM EDGE PERFORMANCE (In Motorola GSM EDGE Test Fixture Optimized for 865 - 895 MHz, 50 hm system) VDD = 26 Vdc, Pout = 25 W Avg., IDQ = 400 mA, f = 865 - 895 MHz, GSM EDGE Signal Power Gain Drain Efficiency Error Vector Magnitude Spectral Regrowth at 400 kHz Offset Spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 41 1.35 - 66 - 81 -- -- -- -- -- dB % % dBc dBc
MOTOROLA RF DEVICE DATA
MRF5S9070NR1 3
VSUPPLY B2 C18 VBIAS + C7 L2 R1 + C11 R2 R3 RF INPUT Z1 L1 C5 Z2 C1 C2 Z3 Z4 Z5 Z6 Z7 C3 Z8 C4 Z9 C6 DUT Z10 Z11 C13 C12 Z12 C14 Z13 Z14 C15 Z15 C16 C17 Z16 RF OUTPUT B1 C8 + C9 C10 C22 C19 + C20 + C21 R4
Z1 Z2 Z3 Z4 Z5 Z6 Z7 Z8 Z9
0.140 x 0.060 Microstrip 0.141 x 0.060 Microstrip 0.280 x 0.060 Microstrip 0.500 x 0.100 Microstrip 0.530 x 0.270 Microstrip 0.155 x 0.270 x 0.530 Taper 0.376 x 0.530 Microstrip 0.116 x 0.530 Microstrip 0.055 x 0.530 Microstrip
Z10 Z11 Z12 Z13 Z14 Z15 Z16 PCB
0.245 x 0.270 Microstrip 0.110 x 0.270 Microstrip 0.055 x 0.270 Microstrip 0.512 x 0.060 Microstrip 0.106 x 0.060 Microstrip 0.930 x 0.060 Microstrip 0.365 x 0.060 Microstrip Taconic RF - 35, 0.030, r = 3.5
Figure 1. MRF5S9070NR1 Test Circuit Schematic
Table 1. MRF5S9070NR1 Test Circuit Component Designations and Values
Part B1 B2 C1 C2 C3 C4, C16 C5, C6 C7, C8, C20 C9, C19, C22 C10, C18 C11 C12 C13, C14 C15 C17 C21 L1, L2 R1 R2 R3 R4 Description Small Ferrite Bead, Surface Mount Large Ferrite Bead, Surface Mount 0.6 - 6.0 pF Variable Capacitor, Gigatrim 16 pF Chip Capacitor, B Case 7.5 pF Chip Capacitor, B Case 0.8 - 8.0 pF Variable Capacitor, Gigatrim 15 pF Chip Capacitors, B Case 10 F, 35 V Tantalum Capacitors 0.58 F Chip Capacitors 18 pF Chip Capacitors, B Case 100 F, 50 V Electrolytic Capacitor 0.7 pF Chip Capacitor, B Case 13 pF Chip Capacitors, B Case 3.9 pF Chip Capacitor, B Case 22 pF Chip Capacitor, B Case 470 F, 63 V Electrolytic Capacitor 12.5 nH Surface Mount Inductors 1 kW Chip Resistor 560 kW Chip Resistor 12 W Chip Resistor 27 W Chip Resistor Part Number 2743019447 2743021447 272715L 100B160JP500X 100B7R5JP500X 272915L 100B150JP500X T491D106K035AS 700A561MP150X 100B180JP500X 515D107M050BB6A 100B0R7BP500X 100B130JP500X 100B3R9JP500X 100B180JP500X SME63VB471M12X25LL A04T - 5 CRCW12061001F100 CRCW12065603F100 CRCW120612R0F100 CRCW120627R0F100 Manufacturer Fair - Rite Fair - Rite Johanson ATC ATC Johanson ATC Kemet ATC ATC Vishay - Dale ATC ATC ATC ATC United Chemi - Con Coilcraft Vishay - Dale Vishay - Dale Vishay - Dale Vishay - Dale
MRF5S9070NR1 4
MOTOROLA RF DEVICE DATA
B1 C7 R1 VGG C11 C2 C1 R2 R3
C8 C9
C19 B2
C21 VDD C20 R4 C22
C10 C6 L1 C12 C3 C5
C18 L2 C15 C16 C13 C14 C17
C4
CUT OUT AREA
MRF5S9070N Rev 0
Figure 2. MRF5S9070NR1 Test Circuit Component Layout
MOTOROLA RF DEVICE DATA
MRF5S9070NR1 5
TYPICAL CHARACTERISTICS
D, DRAIN EFFICIENCY (%) 20 19 18 17 16 15 14 13 12 11 10 9 8 860 865 870 875 880 885 890 895 f, FREQUENCY (MHz) Gps D VDD = 26 Vdc, Pout = 14 W (Avg.), IDQ = 600 mA Single -Carrier N-CDMA, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) 45 40 35 30 25 -40 -45 ACPR ALT -50 -55 -60 -65 -70 900
G ps , POWER GAIN (dB)
ACPR (dBc), ALT (dBc)
IRL
-12 -15 -18 -21 -24 -27 -30
Figure 3. Class AB Broadband Performance
20 IM3, THIRD ORDER INTERMODULATION DISTORTION (dBc) IDQ = 900 mA 750 mA 600 mA 450 mA 17 300 mA 16 VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements 100 kHz Tone Spacing 10 Pout, OUTPUT POWER (WATTS) PEP 100
-20 -25 -30 -35 -40 -45 -50 -55 -60 1 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 450 mA 300 mA 750 mA 600 mA VDD = 26 Vdc f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements 100 kHz Tone Spacing IDQ = 900 mA
19 G ps , POWER GAIN (dB)
18
15
Figure 4. Two - Tone Power Gain versus Output Power
Figure 5. Third Order Intermodulation Distortion versus Output Power
D, DRAIN EFFICIENCY (%) IMD, INTERMODULATION DISTORTION (dBc)
IMD, INTERMODULATION DISTORTION (dBc)
20 Gps 18 G ps , POWER GAIN (dB) 16 D 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 IMD VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements, 100 kHz Tone Spacing
60 40 20 0 -20 -40 -60
-10 -20 -30 -40 -50 -60 -70 -80 -90 1 10 Pout, OUTPUT POWER (WATTS) PEP 100 VDD = 26 Vdc, IDQ = 600 mA f1 = 880 MHz, f2 = 880.1 MHz Two -Tone Measurements Center Frequency = 880 MHz 100 kHz Tone Spacing 3rd Order
5th Order 7th Order
Figure 6. Power Gain, Drain Efficiency and IMD versus Output Power
Figure 7. Intermodulation Distortion Products versus Output Power
MRF5S9070NR1 6
MOTOROLA RF DEVICE DATA
IRL, INPUT RETURN LOSS (dB)
TYPICAL CHARACTERISTICS
55 54 Pout , OUTPUT POWER (dBm) 53 52 51 50 49 48 47 46 45 27 28 29 30 31 32 33 34 35 36 37 Pin, INPUT POWER (dBm) Actual VDD = 26 Vdc, IDQ = 600 mA Pulsed CW, 8 sec (on), 1 msec (off) Center Frequency = 880 MHz P3dB = 49.78 dBm (94.97 W) Ideal
20 18 G ps , POWER GAIN (dB) 16 14 12 10 ACPR 8 ALT 6 1 10 Pout, OUTPUT POWER (WATTS) AVG. Gps
60 40 20 0 VDD = 26 Vdc, IDQ = 600 mA, f = 880 MHz -20 Single -Carrier N-CDMA, IS-95 (Pilot, Sync, Paging, Traffic Codes 8 through 13) -40 -60 -80
D
P1dB = 49.11 dBm (81.54 W)
Figure 8. Pulse CW Output Power versus Input Power
Figure 9. N - CDMA ACPR, Power Gain and Drain Efficiency versus Output Power
20 18 16 14 12 10 8 1 10 Pout, OUTPUT POWER (WATTS) CW 100 VDD = 26 Vdc IDQ = 600 mA f = 880 MHz Gps
70 60 50 40 30 20 10 D, DRAIN EFFICIENCY (%)
D
Figure 10. Power Gain and Drain Efficiency versus CW Output Power
MOTOROLA RF DEVICE DATA
MRF5S9070NR1 7
ACPR, ADJACENT CHANNEL POWER RATIO (dB D, DRAIN EFFICIENCY (%)
Zo = 2
f = 895 MHz Zsource
f = 895 MHz
f = 865 MHz
Zload*
f = 865 MHz
VDD = 26 Vdc, IDQ = 600 mA, Pout = 14 W Avg. f MHz 865 875 885 895 Zsource 0.7 + j0.4 0.7 + j0.5 0.6 + j0.5 0.5 + j0.5 Zload 2.1 + j0.6 2.0 + j0.7 1.8 + j0.8 1.8 + j0.9
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground.
Input Matching Network
Device Under Test
Output Matching Network
Z
source
Z
load
Figure 11. Series Equivalent Source and Load Impedance MRF5S9070NR1 8 MOTOROLA RF DEVICE DATA
NOTES
MOTOROLA RF DEVICE DATA
MRF5S9070NR1 9
NOTES
MRF5S9070NR1 10
MOTOROLA RF DEVICE DATA
PACKAGE DIMENSIONS
B E1 E4 aaa
M 2X
D3
2X
PIN ONE ID
DA
NOTES: 1. CONTROLLING DIMENSION: INCH. 2. INTERPRET DIMENSIONS AND TOLERANCES PER ASME Y14.5M-1994. 3. DATUM PLANE -H- IS LOCATED AT TOP OF LEAD AND IS COINCIDENT WITH THE LEAD WHERE THE LEAD EXITS THE PLASTIC BODY AT THE TOP OF THE PARTING LINE. 4. DIMENSIONS "D1" AND "E1" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .006 PER SIDE. DIMENSIONS "D1" AND "E1" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -H-. 5. DIMENSION b1 DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE .005 TOTAL IN EXCESS OF THE b1 DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. DATUMS -A- AND -B- TO BE DETERMINED AT DATUM PLANE -H-. 7. DIMENSION A2 APPLIES WITHIN ZONE "J" ONLY. 8. DIMENSIONS "D" AND "E2" DO NOT INCLUDE MOLD PROTRUSION. ALLOWABLE PROTRUSION IS .003 PER SIDE. DIMENSIONS "D" AND "E2" DO INCLUDE MOLD MISMATCH AND ARE DETER- MINED AT DATUM PLANE -D-. DIM A A1 A2 D D1 D2 D3 E E1 E2 E3 E4 E5 F b1 c1 aaa INCHES MIN MAX .078 .082 .039 .043 .040 .042 .416 .424 .378 .382 .290 .320 .016 .024 .436 .444 .238 .242 .066 .074 .150 .180 .058 .066 .231 .235 .025 BSC .193 .199 .007 .011 .004 MILLIMETERS MIN MAX 1.98 2.08 0.99 1.09 1.02 1.07 10.57 10.77 9.60 9.70 7.37 8.13 0.41 0.61 11.07 11.28 6.04 6.15 1.68 1.88 3.81 4.57 1.47 1.68 5.87 5.97 0.64 BSC 4.90 5.06 0.18 0.28 0.10
D aaa
M
DA
b1
2X
D1
E
A
PIN 2
D2
PIN 3
c1 H A1 A2
DATUM PLANE
NOTE 7
MOTOROLA RF DEVICE DATA
CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC CCCC
ZONE J
E5 E3
EXPOSED HEATSINK AREA PIN 1
BOTTOM VIEW F
A E2 E5
2X
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
D
CASE 1265 - 08 ISSUE G TO - 270- 2 PLASTIC
MRF5S9070NR1 11
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters that may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals", must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. MOTOROLA and the Stylized M Logo are registered in the US Patent and Trademark Office. All other product or service names are the property of their respective owners. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. E Motorola Inc. 2004 HOW TO REACH US: USA /EUROPE /LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217 1-800-521-6274 or 480-768-2130 JAPAN: Motorola Japan Ltd.; SPS, Technical Information Center, 3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan 81-3-3440-3569 ASIA /PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre, 2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong 852-26668334 HOME PAGE: http://motorola.com/semiconductors
MRF5S9070NR1 12
MOTOROLA RF DEVICE DATA
MRF5S9070NR1/D

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