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MBRF20S100CT Schottky Barrier Rectifier MBRF20S100CT Schottky Barrier Rectifier Features * Low forward voltage drop * High frequency properties and switching speed * Guard ring for over-voltage protection Applications * Switched mode power supply * Freewheeling diodes TO-220F 123 Marking: YM20S100CT 1. Anode 2.Cathode 3. Anode Absolute Maximum Ratings Symbol VRRM VR IF(AV) IFSM TJ, TSTG Ta = 25C unless otherwise noted Parameter Maximum Repetitive Reverse Voltage Maximum DC Reverse Voltage Average Rectified Forward Current @TC = 125C Value 100 100 20 200 -65 to +150 Units V V A A C Non-Repetitive Peak Surge Current (per diode) 60Hz Single Half-Sine Wave Operating Junction and Storage Temperature Thermal Characteristics Symbol RJC Parameter Maximum Thermal Resistance, Junction to Case (per diode) TC = 25C unless otherwise noted Value 2.8 Units C/W Electrical Characteristics Symbol VFM* Parameter Maximum Instantaneous Forward Voltage IF = 10A IF = 10A IF = 20A IF = 20A Maximum Instantaneous Reverse Current @ rated VR TC TC TC TC = 25C = 125C = 25C = 125C Value 0.70 0.95 0.85 0.1 20 Units V V V V mA mA IRM* TC = 25C TC = 125C * Pulse Test: Width = 300s, Duty Cycle = 2% (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com MBRF20S100CT Rev. A MBRF20S100CT Schottky Barrier Rectifier Typical Performance Characteristics Figure 1. Typical Forward Voltage Characteristics (per diode) Figure 2. Typical Reverse Current vs. Reverse Voltage (per diode) 10 -2 10 Forward Current, IF[A] 1 TJ=125C TJ=100C Reverse Current, IR[A] 10 -3 TJ=125C TJ=100C 10 -4 TJ=75C 10 -5 0.1 TJ=75C TJ=25C 0.01 0.0 10 -6 TJ=25C 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop, VF[V] Reverse Voltage, VR[V] Figure 3. Typical Junction Capacitance (per diode) 800 700 600 500 400 300 200 Figure 4. Forward Current Derating Curve 25 [A] TJ=25C DC 20 Juntion Capacitance, CJ[pF] Average Forward Current, I F(AV) 15 10 100 90 80 70 60 50 0 20 40 60 80 100 5 0 0 20 40 60 80 100 120 140 160 Reverse Voltage, VR[V] Case Temperature, TC[C] Figure 5. Non-Repetive Surge Current (per diode) 250 Max. Forward Surge Current, IFSM[A] 200 150 100 50 0 1 10 100 Number of Cycles @ 60Hz 2 MBRF20S100CT Rev. A www.fairchildsemi.com MBRF20S100CT Schottky Barrier Rectifier Mechanical Dimensions TO-220F 3.30 0.10 10.16 0.20 (7.00) o3.18 0.10 2.54 0.20 (0.70) 6.68 0.20 15.80 0.20 (1.00x45) MAX1.47 9.75 0.30 0.80 0.10 (3 ) 0 0.35 0.10 2.54TYP [2.54 0.20] #1 0.50 -0.05 2.54TYP [2.54 0.20] 4.70 0.20 +0.10 2.76 0.20 9.40 0.20 Dimensions in Millimeters 3 MBRF20S100CT Rev. A 15.87 0.20 www.fairchildsemi.com MBRF20S100CT Schottky Barrier Rectifier TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 4 MBRF20S100CT Rev. A www.fairchildsemi.com |
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