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Schottky Barrier Diodes (SBD)
MA27728
Silicon epitaxial planar type
Unit: mm
0.15 min.
For switching circuits
0.27-0.02
+0.05
0.13-0.02
+0.05
2
Features
* High-density mounting is possible * Low forward voltage VF and good wave detection efficiency * Small temperature coefficient of forward characteristic * Small reverse current IR * SSS-Mini type 2-pin package
5
1.000.05 1.400.05 (0.94) 0.15 min.
1
0.600.05
0.15 min.
Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Junction temperature Storage temperature
Symbol VR VRM IF IFM Tj Tstg
Rating 30 30 30 150 125 -55 to +125
Unit
0 0.01
V V mA mA C C
0.520.03
Absolute Maximum Ratings Ta = 25C
(0.50)
1: Anode 2: Cathode SSSMini2-F2 Package
Marking Symbol: R
Electrical Characteristics Ta = 25C 3C
Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time Detection efficiency
*
Conditions VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Irr = 1 mA, RL = 100 Vin = 3 V(peak) , f = 30 MHz RL = 3.9 k, CL = 10 pF
Min
Typ
5
Max 300 0.4 1.0
Unit nA V
Ct trr
1.5 1.0 65
pF ns %
Note) 1. This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 2 GHz 3. *: trr measuring instrument
Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Output Pulse
A
VR Pulse Generator (PG-10N) Rs = 50 Wave Form Analyzer (SAS-8130) Ri = 50
90% tp = 2 s tr = 0.35 ns = 0.05
Publication date: June 2002
SKH00119AED
1
MA27728
IF VF
103 75C 25C 102
102 103
IR V R
1.6 1.4
VF Ta
Forward current IF (mA)
Reverse current IR (A)
Forward voltage VF (V)
Ta = 125C 10
-20C
Ta = 125C
1.2 1.0 0.8 0.6 0.4 3 mA 0.2 1 mA 0 40 80 120 160 200
10 75C
IF = 30 mA
1
1
10-1
10-1
25C
10-2
0
0.2
0.4
0.6
0.8
1.0
1.2
10-2
0
5
10
15
20
25
30
0 -40
Forward voltage VF (V)
Reverse voltage VR (V)
Ambient temperature Ta (C)
IR T a
102 VR = 30 V 10 V 1V
3.0
Ct VR
1 000 300
IF(surge) tW
Ta = 25C IF(surge) tW 100 30 10 3 1 0.3
2.5
Reverse current IR (A)
10
2.0
1
1.5
1.0
10-1
0.5
10-2 -40
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
0
0
40
80
120
160
200
0
5
10
15
20
25
30
0.1 0.03
0.1
0.3
1
3
10
30
Ambient temperature Ta (C)
Reverse voltage VR (V)
Pulse width tW (ms)
2
SKH00119AED
Request for your special attention and precautions in using the technical information and semiconductors described in this book
(1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this book and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this book is limited to showing representative characteristics and applied circuits examples of the products. It neither warrants non-infringement of intellectual property right or any other rights owned by our company or a third party, nor grants any license. (3) We are not liable for the infringement of rights owned by a third party arising out of the use of the product or technologies as described in this book. (4) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (5) The products and product specifications described in this book are subject to change without notice for modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products. (7) When using products for which damp-proof packing is required, observe the conditions (including shelf life and amount of time let standing of unsealed items) agreed upon when specification sheets are individually exchanged. (8) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita Electric Industrial Co., Ltd.
2002 MAY

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