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  Datasheet File OCR Text:
 ADE-208-055C(Z)
HVM187S Silicon Epitaxial Planar PIN Diode for High Frequency Attenuator
Preliminary Rev. 3 Jun. 1993 Features
* Low forward resistance. (rf = 5.5 max) * MPAK package is suitable for high density surface mounting and high speed assembly.
Pin Arrangement
3
2
1
Ordering Information
Type No. HVM187S Laser Mark H3 Package Code MPAK
(Top View)
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2
Absolute Maximum Ratings (Ta = 25C)
Item Reverse voltage Forward current Power dissipation Junction temperature Storage temperature * Per one device Symbol VR IF Pd * Tj Tstg Value 60 50 100 125 -55 to +125 Unit V mA mW C C
Electrical Characteristics (Ta = 25C)
Item Forward voltage Reverse current Capacitance Forward resistance ESD-Capability Symbol Min VF IR C rf -- -- -- -- 3.5 200 Typ -- -- -- -- -- Max 1.0 100 2.4 5.5 -- Unit V nA pF V Test Condition IF = 10 mA VR = 60 V VR = 0 V , f = 1 MHz IF = 10 mA, f = 100 MHz *C=200pF,
Both forward and reverse direction 1 pulse
* Failure criterion ; IR 100nA at VR= 60V.
HVM187S
10
-2
10
-8
10 Forward current I F (A)
-4
10
-6
Reverse current I R (A) 0.6 0.8
10
-9
10
-10
10
-8
10 10
-10
-11
10
-12
0
0.2
0.4
1.0
10
-12
0
Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage
60 20 80 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage
100
10 f=1MHz
4
f=100MHz
Forward resistance r f ( )
2
10 Capacitance C (pF)
10
3
10
2
1.0
10
10
-1
1.0
1.0
10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage
10
10
-5
10
-4
10
-3
10
-2
Forward current I F (A) Fig.4 Forward resistance Vs. Forward current
HVM187S
Package Dimensions
0.65 - 0.3
+ 0.1
Unit: mm
Laser Mark
0.4 - 0.05
+ 0.10
0.16 - 0.06
+ 0.10
3
+ 0.2 - 0.6
0.1 0.65 + 0.3 -
2 0.95
1 0.95
2.8
H3
1.9
0.3 2.8 + 0.1 -
1.5
0 - 0.10
1 Cathode 2 2 Anode 1 3 Cathode 1 Anode 2 HITACHI Code MPAK(1) JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011
0.3
1.1 - 0.1
+ 0.2


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