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| ADE-208-419(Z) HVC359 Variable Capacitance Diode for VCXO Rev. 0 Nov. 1995 Features * High capacitance ratio and good C-V linearity. * To be usable at low voltage. * Ultra small Flat Package (UFP) is suitable for surface mount design. 1 Outline Cathode mark Mark 2 1. Cathode 2. Anode Ordering Information Type No. HVC359 Laser Mark S Package Code UFP Absolute Maximum Ratings (Ta = 25C) Item Reverse voltage Junction temperature Storage temperature Symbol VR Tj Tstg Value 15 125 -55 to +125 Unit V C C Electrical Characteristics (Ta = 25C) Item Reverse current Capacitance Capacitance ratio Series resistance ESD-Capability Symbol IR1 IR2 C1 C4 n rs -- Min -- -- 24.8 6.0 3.0 -- 80 Typ -- -- -- -- -- -- -- Max 10 100 29.8 8.3 -- 1.5 -- Unit nA pF -- V Test Condition VR = 10 V VR = 10 V , Ta = 60 C VR = 1 V , f = 1 MHz VR = 4 V , f = 1 MHz C1 / C4 VR = 4 V , f = 100MHz *C=200pF,Both forward and reverse direction 1 pulse. * Failure criterion ; IR 20nA at VR = 10 V HVC359 10 -9 30 f=1MHz 25 Reverse current I R (A) Capacitance C (pF) 10 -10 20 10 -11 15 10 10 -12 5 10-13 0 0 4 8 12 16 Reverse voltage VR (V) 20 1.0 10 Reverse voltage VR (V) Fig.2 Capacitance Vs. Reverse voltage 30 Fig.1 Reverse current Vs. Reverse voltage Package Dimensions Unit: mm Cathode Mark S 1.2 0.10 1.6 0.10 0.3 0.05 0.8 0.10 1 Cathode 2 Anode 0.6 0.10 HITACHI Code JEDEC Code EIAJ Code Weight (g) UFP -- SC-79 0.0016 |
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