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| HSU119 Silicon Epitaxial Planar Diode for High Speed Switching ADE-208-444(Z) Rev 0 March 1996 Features * * * Low capacitance. (C=2.0pF max) Short reverse recovery time. (trr =3.0ns max) Ultra small Resin Package (URP) is suitablefor high density surface mounting and high speed assembly. Ordering Information Type No. HSU119 Laser Mark H1 Package Code URP Outline Cathode mark Mark 1 H1 2 1. Cathode 2. Anode HSU119 Absolute Maximum Ratings (Ta = 25C) Item Peak reverse voltage Reverse voltage Average forward current Peak forward current t Non-Repetitive peak forward surge current Junction temperature Storage temperature Note Symbol VRM VR IO IFM IFSM*1 Tj Tstg Value 85 80 100 225 4 125 -55A+125 Unit V V mA mA A C C 1. Within 1E s forward surge current. Electrical Characteristics (Ta = 25C) Item Forward voltage Symbol VF1 VF2 Reverse current Capacitance Reverse recovery time*1 IR C trr Min Typ Max 0.8 1.2 0.1 2.0 3.0 A pF ns Unit V Test Condition IF = 10 mA IF = 100 mA VR = 80V VR = 0V, f = 1 MHz IF = 10 mA, VR = 6V RL=50 A\ A\ A\ A\ A\ A\ A\ A\ A\ A\ Notes 1. Reverse recovery time test circuit DC Supply 0.1F 3k Sampling Rin =50 Oscilloscope Ro =50 Pulse Generator Trigger HSU119 Main Characteristic 1.0 10 10 -4 -5 Reverse current I R (A) (A) Forward current IF 10 -1 10 10 10 10 10 -6 Ta=75C Ta=50C -7 Ta=25C -8 10 -2 Ta= 75 C Ta= 25C Ta=25C -9 -10 10 -3 10 0 0.2 0.4 0.6 0.8 1.0 1.2 Forward voltage V F (V) -11 0 20 40 60 80 100 Reverse voltage V R (V) Fig.2 Reverse current Vs. Reverse voltage Fig.1 Forward current Vs. Forward voltage f=1MHz 10 Capacitance C (pF) 1.0 10 -1 10 -1 1.0 Reverse voltage V R (V) 10 Fig.3 Capacitance Vs. Reverse voltage HSU119 Package Dimensions Unit : mm Cathode Mark 1 H1 1.70.15 2.50.15 2 0.30.15 1.250.15 1. Cathode 2. Anode Hitachi Code JEDECCode EIAJCode Weight(g) URP -- -- 0.004 0 to 0.10 0.90.15 |
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