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| ADE-208-029B(Z) HSM2838C Silicon Epitaxial Planar Diode for High Speed Switching Rev. 2 Aug. 1995 Features * Fast recovery time. * MPAK package is suitable for high density surface mounting and high speed assembly. 2 Pin Arrangement 3 1 Ordering Information Type No. HSM2838C Laser Mark A6 Package MPAK (Top View) 1 Anode 2 Anode 3 Cathode Absolute Maximum Ratings ** (Ta = 25C) Item Peak reverse voltage Reverse voltage Peak forward current Non-Repetitive peak forward surge current Symbol VRM VR IFM IFSM * Io Tj Tstg Value 85 80 300 4 100 125 -55 to +125 Unit V V mA A mA C C Average forward current Junction temperature Storage temperature * Within 1s forward surge current. ** Per one device Electrical Characteristics * (Ta = 25C) Item Forward voltage Reverse current Capacitance Reverse recovery time * Per one device Symbol Min VF1 VF2 VF3 IR C trr -- -- -- -- -- -- Typ 0.76 0.88 0.97 -- 0.5 -- Max 1.0 1.0 1.2 0.1 2.0 3.0 A pF ns V Unit Test Condition IF = 10 mA IF = 50 mA IF = 100 mA VR = 80 V VR = 0 V, f = 1 MHz IF= 10mA, VR=6V, RL=50 HSM2838C 10 -1 10 10 Reverse current I R (A) -4 -5 Forward current I F (A) 10 -2 10 10 10 10 -6 Ta=75C -7 10 -3 Ta =7 5 C Ta =2 5 C Ta= -25 C Ta=50C Ta=25C -8 10 -4 -9 Ta= 0 C Ta=-25C 10 -5 10 10 -6 -10 10 0 0.6 0.8 0.2 0.4 Forward voltage VF (V) Fig.1 Forward current Vs. Forward voltage 1.0 -11 0 60 80 20 40 Reverse voltage VR (V) Fig.2 Reverse current Vs. Reverse voltage 100 f=1MHz 10 Capacitance C (pF) 1.0 10 -1 1.0 10 Reverse voltage VR (V) Fig.3 Capacitance Vs. Reverse voltage 102 HSM2838C Package Dimensions 0.65 - 0.3 + 0.1 Unit: mm Laser Mark 0.4 - 0.05 + 0.10 0.16 - 0.06 + 0.10 3 + 0.2 - 0.6 0.1 0.65 + 0.3 - 2 0.95 1 0.95 2.8 A6 1.9 0.3 2.8 + 0.1 - 1.5 0 - 0.10 1 Anode 2 Anode 3 Cathode HITACHI Code MPAK(1) 1.1 - 0.1 + 0.2 0.3 JEDEC Code EIAJ Code Weight (g) -- SC-59A 0.011 |
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