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| HL1566AF 1.55 m Laser Diode with EA Modulator Description The HL1566AF is a 1.55 m InGaAsP distributed-feedback laser diode (DFB-LD) with a multiquantum well (MQW) structure. An electroabsorption (EA) modulator is integrated with the laser diode. It is suitable as a light source for high-bit-rate, long haul fiberoptic communication systems, such as 2.5 Gbps external modulation systems for up to 600 km. Features * * * * * Long wavelength output: p = 1550 nm Typ. High extinction ratio: 13 dB Min. at VR(EA) = -2 V Fast pulse response: tr/tf 80 ps Dynamic single longitudinal mode: Sr = 40 dB Typ. Package: open air package (chip on carrier) with micro strip-line 232 HL1566AF Absolute Maximum Ratings (TC = 25C) Item LD forward current Laser diode reverse voltage Modulator reverse voltage Operating Temperature Storage temperature Note: *1 Symbol IF VR(LD) VR(EA) Topr Tstg Value 100 2 -5 10 to 40 -40 to 85 Unit mA V V C C 1. without condensation Optical and Electrical Characteristics (TC = 25C) Item Threshold current Optical output power Extinction ratio Lasing wavelength Symbol Ith PO ER p // tr tr S21 S11 Min -- 3.5 13 1530 30 -- -- -- -- 4 10 Typ 10 -- -- 1550 40 30 40 -- -- -- -- Max 20 -- -- 1570 -- -- -- 80 80 -- -- Unit mA mW dB nm dB deg. deg. ps ps GHz dB I F(LD) = 50 mA, VR(EA) = 0 V I F(LD) = 50 mA, VR(EA) = 0/-2 V 2.5 Gbps (NRZ) 2.5 Gbps (NRZ) PO = 3.5 mW, FWHM PO = 3.5 mW, FWHM 2.5 Gbps (NRZ) 2.5 Gbps (NRZ) I F(LD) = 50 mA, VR(EA) = -1 V I F(LD) = 50 mA, VR(EA) = -1 V, f 3 GHz Test Conditions Side-mode suppression ratio Sr Beam divergence (parallel) Beam divergence (perpendicular) Rise time Fall time Cutoff frequency RF return loss 233 HL1566AF Typical Characteristics Curves 234 HL1566AF Typical Characteristics Curves (cont) 235 |
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