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www.fairchildsemi.com
FS6S0965F
Fairchild Power Switch(FPS)
Features
* * * * * * * * * * Wide operating frequency range up to 150Khz Internal Burst mode Controller for Stand-by mode Pulse by pulse over current limiting Over current protection(Latch mode) Over voltage protection (Latch mode) Over load protection(Auto restart mode) Internal thermal shutdown function(Latch mode) Under voltage lockout Internal high voltage sense FET Eternal sync terminal/Soft start
Description
The Fairchild Power Switch(FPS) product family is specially designed for an off-line SMPS with minimal external components. The Fairchild Power Switch(FPS) consist of high voltage power SenseFET and current mode PWM IC. Included PWM controller features integrated fixed oscillator, under voltage lock out, optimized gate turn-on/turn-off driver, thermal shut down protection, over voltage protection, and temperature compensated precision current sources for loop compensation and fault protection circuitry. compared to discrete MOSFET and controller or RCC switching converter solution, aFairchild Power Switch(FPS) can reduce total component count, design size, and weight and at the same time increase efficiency, productivity, and system reliability. It has a basic platform well suited for cost effective monitor power supply.
TO-3PF-5L
Advance Specification
Internal Block Diagram
Vref
3
Vpp=5.8/7.2V OSC Internal Bias Vref Vfb Vth=1V Burst mode controller Vref
1
5
UVLO
S Q
Ron
Vcc Vth=11V/12V
R
Roff PWM
4
Ifb
2.5R R Vcc Vfb Offset Rsenese
Vref
Idelay OLP Vth=7.5V Vcc Vth=30V OVP UVLO Reset (Vcc=9V)
OCL
Filter (130nsec)
Vth=1V
2
S R
Q
Q
S R
Power-on Reset (Vcc=6.5V)
TSD
(Tj=160 )
Rev.0.5.1
(c)2001 Fairchild Semiconductor Corporation
FS6S0965F
Absolute Maximum Ratings
(Ta=25C, unless otherwise specified) Parameter Drain-source(GND) voltage Gate-source (GND) Voltage Drain current pulsed (2) Single pulsed avalanche energy (3) Single Pulsed Avalanche current
(4) (1)
Symbol VDSS VDGR VGS IDM EAS IAS ID ID VCC VFB VS_S PD(Watt H/S) Derating Tj TA TSTG
Value 650 650 30 27.6 515 25 6.9 4.3 35 -0.3 to VCC -0.3 to 10 90 0.721 +160 -25 to +85 -55 to +150
Unit V V V ADC mJ A ADC ADC V V V W W/C C C C
Drain-Gate Voltage (RGS=1M)
Continuous drain current (Tc = 25C) Continuous drain current (TC=100C) Supply voltage
Advance Specification
Input Voltage Range Total Power Dissipation Operating junction temperature Operating Ambient Temperature Storage Temperature range
Notes: 1. Tj=25C to 150C 2. Repetitive rating: Pulse width limited by maximum junction temperature 3. L=20mH, starting Tj=25C 4. L=13uH, starting Tj=25C
2
FS6S0965F
Electrical Characteristics (SFET part)
(Ta=25C unless otherwise specified) Parameter Drain source breakdown voltage Zero gate voltage drain current Static drain source on resistance (note) Forward transconductance (note) Input capacitance Output capacitance Reverse transfer capacitance Turn on delay time Rise time Turn off delay time Fall time Total gate charge (gate-source+gate-drain) Gate source charge Gate drain (Miller) charge
Note: Pulse test : Pulse width 300S, duty 2% 1 S = --R
Symbol BVDSS IDSS RDS(ON) gfs Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd
Condition VGS=0V, ID=250A VDS=650V, VGS=0V VDS=520V VGS=0V, TC=125C VGS=10V, ID=1.8A VDS=50V, ID=1.8A VGS=0V, VDS=25V, f = 1MHz VDD=325V, ID=6.5A (MOSFET switching time are essentially independent of operating temperature) VGS=10V, ID=6.5A, VDS=520V (MOSFET Switching time are Essentially independent of Operating temperature)
Min. 650 -
Typ. 1.0 1300 135 25 25 75 130 70 45 8 21
Max. 200 300 1.2 60 -
Unit V A A
S pF
Advance Specification
3
nS
nC
FS6S0965F
Electrical Characteristics
(Ta=25C unless otherwise specified) Parameter UVLO SECTION Start threshold voltage Stop threshold voltage SENSEFET SECTION Drain to PKG Breakdown voltage Drain to Source Breakdown voltage Drain to Source Leakage current OSCILLATOR SECTION Initial Frequency FOSC FSTABLE FOSC DMAX DMIN IFB VSD Idelay VOVP VOCL TSD VFB = GND Vfb 6.9V VFB = 5V Vsync 11V 12V Vcc 23V -25C Ta 85C 45 0 0 92 0.7 6.9 1.6 27 0.9 140 50 1 5 95 0.9 7.5 2.0 30 1.0 160 55 3 10 98 0 1.1 8.1 2.4 33 1.1 kHz % % % % mA V A V V C BVpkg BVdss Idss 60HZ AC, Ta = 25C Vdrain = 650V, Ta = 25C 3500 300 V V uA Vdrain = 650V, Ta = 25C 650 VSTART VSTOP VFB = GND VFB = GND 14 8 15 9 16 10 V V Symbol Condition Min. Typ. Max. Unit
Advance Specification
4
Voltage Stability Temperature Stability (note4) Maximum duty cycle Minimum Duty Cycle FEEDBACK SECTION Feedback source current Shutdown Feedback voltage Shutdown delay current PROTECTION SECTION Over Voltage Protection Over Current Latch Voltage (Note2) Thermal Shutdown Temp.(Note4)
FS6S0965F
Electrical Characteristics
(Ta=25C unless otherwise specified) Parameter Sync & SOFTSTART SECTION Softstart Vortage Softstart Current Sync High Threshold Voltage Sync Low Threshold Voltage BURST MODE SECTION Burst mode Low Threshold Voltage Burst mode High Threshold Voltage Burst mode Enable Feedback Voltage(Note4) Burst mode Peak Current Limit(Note3) Burst mode Frequency CURRENT LIMIT(SELF-PROTECTION)SECTION Peak Current Limit(Note3) TOTAL DEVICE SECTION Start Up current Operating supply current (Note1) ISTART IOP IOP(MIN) IOP(MAX) Vfb = GND, VCC = 14V Vfb = GND, VCC = 16V Vfb = GND, VCC = 10V Vfb = GND, VCC = 28V 10 15 mA 0.1 0.17 mA IOVER 5.28 6.0 6.72 A VBURL VBURH VBEN IBU_PK FBUR Vfb = 0V Vfb = 0V Vcc = 10.5V Vcc = 10.5V Vcc = 10.5V, Vfb = 0V 10.4 11.4 0.7 0.6 40 11.0 12.0 1.0 0.85 50 11.6 12.6 1.3 1.1 60 V V V VSS ISS VSYNCH VSYNCL Vfb = 2 Vss = V Vcc = 16V, Vfb = 5V Vcc = 16V, Vfb = 5V 4.7 0.8 5.0 1.0 7.2 5.8 5.3 1.2 V mA V V Symbol Condition Min. Typ. Max. Unit
Advance Specification
V KHz
Notes: 1. These parameters is the current flowing in the Control IC. 2. These parameters, although guaranteed, are tested in EDS(wafer test) process. 3. These parameters indicate Inductor Current. 4. These parameters, although guranteed at the design, are not tested in massing production.
5
FS6S0965F
Package Dimensions
TO-3PF-5L
Advance Specification
6
FS6S0965F
Package Dimensions(Continued)
TO-3PF-5L(Forming)
Advance Specification
7
FS6S0965F
Ordering Information
Product Number FS6S0965F Package TO-3PF-5L Marking Code 6S0965F BVdss 650V Rds(on) 1.0
Advance Specification
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user.
www.fairchildsemi.com 10/17/01 0.0m 001 Stock#DSxxxxxxxx 2001 Fairchild Semiconductor Corporation
2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.

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