View FN3386_984827.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

HCTS164MS
August 1995
Radiation Hardened 8-Bit Serial-In/Parallel-Out Shift Register
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE METAL SEAL PACKAGE (SBDIP) MIL-STD-1835, CDIP2-T14 TOP VIEW
DS1 1 DS2 2 Q0 3 Q1 4 Q2 5 Q3 6 GND 7 14 VCC 13 Q7 12 Q6 11 Q5 10 Q4 9 MR 8 CP
Features
* 3 Micron Radiation Hardened CMOS SOS * Total Dose 200K RAD (Si) * Dose Rate Survivability >1012 RAD (Si)/s (20ns Pulse) * Dose Rate Upset >1010 RAD (Si)/s (20ns Pulse) * Single Event Ray Upset Rate < 2 x 10-9 Errors/Bit Day (Typ) * LET Threshold >100 MEV-cm2/mg * Latch-Up-Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to LSTTL ICs * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels -VIL = 0.8 VCC (Max) -VIH = VCC/2 (Min) * Input Current Levels Ii 5A at VOL, VOH
14 LEAD CERAMIC METAL SEAL FLATPACK PACKAGE (FLATPACK) MIL-STD-1835, CDFP3-F14
TOP VIEW
DS1 DS2 Q0 Q1 Q2 Q3 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC Q7 Q6 Q5 Q4 MR CP
Description
The Intersil HCTS164MS is a radiation hardened 8-bit Serial-In/ Parallel-Out Shift Register with asynchronous reset. The HCTS164MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.
Ordering Information
PART NUMBER HCTS164DMSR HCTS164KMSR HCTS164D/Sample HCTS164K/Sample HCTS164HMSR TEMPERATURE RANGE -55oC to +125oC -55oC to +125oC +25oC +25oC +25oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 14 Lead SBDIP 14 Lead Ceramic Flatpack 14 Lead SBDIP 14 Lead Ceramic Flatpack Die
Truth Table
OPERATING MODE Reset (Clear) Shift INPUTS MR L H H H H CP X DS1 X L L H H DS2 X L H L H Q0 L L L L H OUTPUTS Q1-Q7 L-L q0 -q6 q0 - q6 q0 - q6 q0 - q6
H = High Voltage Level L = Low Voltage Level = LOW-to-HIGH clock transition q = Lower case letters indicate the state of the referenced input (or output) one setup time prior to the LOW-to-HIGH clock transition = DS1 and DS2 inputs must be at state one setup prior to CP (rising edge)
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. http://www.intersil.com or 407-727-9207 | Copyright (c) Intersil Corporation 1999
File Number Spec Number
1
3386.1 518613
HCTS164MS Functional Diagram
CP
DS1
DS2
CL DQ R
CL DQ R
CL DQ R
CL DQ R
CL DQ R
CL DQ R
CL DQ R
CL DQ R
MR
Q0
Q1
Q2
Q3
Q4
Q5
Q6
Q7
Spec Number 2
518613
Specifications HCTS164MS
Absolute Maximum Ratings
Supply Voltage (VCC). . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +7.0V Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .25mA (All Voltage Reference to the VSS Terminal) Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1
Reliability Information
Thermal Resistance JA JC SBDIP Package. . . . . . . . . . . . . . . . . . . . 74oC/ W 24oC/W Ceramic Flatpack Package . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125o Ambient SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.68W Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . . . .0.43W If device power exceeds package dissipation capability provide heat sinking or derate linearly at the following rate: SBDIP Package. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13.5mW/oC Ceramic Flatpack Package . . . . . . . . . . . . . . . . . . . . . . 8.6mW/oC
CAUTION: As with all semiconductors, stress listed under "Absolute Maximum Ratings" may be applied to devices (one at a time) without resulting in permanent damage. This is a stress rating only. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. The conditions listed under "Electrical Performance Characteristics" are the only conditions recommended for satisfactory device operation.
Operating Conditions
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Times at 4.5 VCC (TR, TF) . . . . . . 100ns/ V Max Operating Temperature Range (TA) . . . . . . . . . . . . -55oC to +125oC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . . . . . . . . 0V to 0.8V Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . . . . VCC to VCC/2V
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 1 2, 3 1 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1, 2, 3 1 2, 3 7, 8A, 8B LIMITS TEMPERATURE +25oC +125oC, -55oC MIN 4.8 4.0 -4.8 -4.0 VCC -0.1 VCC -0.1 MAX 40 750 0.1 0.1 0.5 5.0 UNITS A A mA mA mA mA V V V V A A -
PARAMETERS Supply Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0V (Note 2) VCC = VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V (Note 2) VCC = 4.5V, VIH = 2.25V, IOL = 50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOL = 50A, VIL = 0.8V
Output Current (Sink) Output Current (Source) Output Voltage Low
IOL
+25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC, +125oC, -55oC +25oC +125oC, +25oC, -55oC -55oC
IOH
VOL
Output Voltage High
VOH
VCC = 4.5V, VIH = 2.25V, IOH = -50A, VIL = 0.8V VCC = 5.5V, VIH = 2.75V, IOH = -50A, VIL = 0.8V
Input Leakage Current Noise Immunity Functional Test NOTES:
IIN
VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 2.25V, VIL = 0.8V (Note 2)
FN
+125oC,
1. All voltages reference to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 3
518613
Specifications HCTS164MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) CONDITIONS VCC = 4.5V VCC = 4.5V CP to Qn TPHL VCC = 4.5V VCC = 4.5V MR to Qn TPHL VCC = 4.5V VCC = 4.5V NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = 3.0V. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTE 1) CONDITIONS VCC = 5.0V, f = 1MHz LIMITS NOTES 1 1 CIN VCC = 5.0V, f = 1MHz 1 1 Output Transition Time TTHL TTLH VCC = 4.5V 1 1 TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC MIN MAX 135 210 10 10 15 22 UNITS pF pF pF pF ns ns GROUP A SUBGROUPS 9 10, 11 9 10, 11 9 10, 11 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN 2 2 2 2 2 2 MAX 26 33 33 40 34 42 UNITS ns ns ns ns ns ns
PARAMETER CP to Qn
SYMBOL TPLH
+25oC +125oC, -55oC
+25oC +125oC, -55oC
PARAMETER Capacitance Power Dissipation Input Capacitance
SYMBOL CPD
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Minimum and Maximum Limits are guaranteed, but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS 200K RAD LIMITS TEMP +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN 4.0 -4.0 VCC -0.1 MAX 0.75 0.1 5 UNITS mA mA mA V V A -
PARAMETERS Quiescent Current Output Current (Sink) Output Current (Source) Output Voltage Low Output Voltage High Input Leakage Current Noise Immunity Functional Test
SYMBOL ICC IOL IOH VOL VOH IIN FN
(NOTES 1, 2) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIN = VCC or GND, VOUT = 0.4V VCC = 4.5V, VIN = VCC or GND, VOUT = VCC -0.4V VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOL = 50A VCC = 4.5V and 5.5V, VIH = VCC/2, VIL = 0.8V, IOH = -50A VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = VCC/2, VIL = 0.8V, (Note 3)
Spec Number 4
518613
Specifications HCTS164MS
TABLE 4. DC POST RADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS (Continued) 200K RAD LIMITS TEMP +25oC +25oC +25oC MIN 2 2 2 MAX 33 40 42 UNITS ns ns ns
PARAMETERS CP to Qn CP to Qn MR to Qn NOTES:
SYMBOL TPLH TPHL TPHL VCC = 4.5V VCC = 4.5V VCC = 4.5V
(NOTES 1, 2) CONDITIONS
1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns, VIL = GND, VIH = VCC. 3. For functional tests VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". TABLE 5. BURN-IN AND OPERATING LIFE TEST, DELTA PARAMETERS (+25oC) PARAMETER ICC IOL/IOH GROUP B SUBGROUP 5 5 DELTA LIMIT 12A -15% of 0 Hour
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUPS Initial Test (Preburn-In) Interim Test 1 (Postburn-In) Interim Test 2 (Postburn-In) PDA Interim Test 3 (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A Testing in accordance with Method 5005 of MIL-STD-883 may be exercised. TABLE 7. TOTAL DOSE IRRADIATION CONFORMANCE GROUPS Group E Subgroup 2 NOTE: 1. Except FN Test which will be performed 100% Go/No-Go. TEST METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1) METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
Spec Number 5
518613
Specifications HCTS164MS
TABLE 8. STATIC AND DYNAMIC BURN-IN TEST CONNECTIONS OSCILLATOR OPEN GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
STATIC BURN-IN I TEST CONNECTIONS (Note 1) 3 - 6, 10 - 13 1, 2, 7 - 9 14 -
STATIC BURN-IN II TEST CONNECTIONS (Note 1) 3 - 6, 10 - 13 7 1, 2, 8, 9, 14 -
DYNAMIC BURN-IN TEST CONNECTIONS (Note 2) NOTES: 1. Each pin except VCC and GND will have a resistor of 10K 5% for static burn-in. 2. Each pin except VCC and GND will have a resistor of 1K 5% for dynamic burn-in. TABLE 9. IRRADIATION TEST CONNECTIONS OPEN 3 - 6, 10 - 13 GROUND 7 VCC = 5V 0.5V 1, 2, 8, 9, 14 7 3 - 6, 10 - 13 9, 14 8 1, 2
NOTE: Each pin except VCC and GND will have a resistor of 47K 5% for Irradiation Testing. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures.
AC Timing Diagrams and Load Circuit
VIH VS VIL CL TPLH TPHL VOH VS VOL TTLH 80% VOL 20% 80% 20% TTHL OUTPUT CL = 50pF RL = 500 VOH RL INPUT DUT TEST POINT
OUTPUT
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND HCTS 4.50 3.0 1.3 0 0 UNITS V V V V V
Spec Number 6
518613
HCTS164MS Die Characteristics
DIE DIMENSIONS: 95 mils x 95 mils 2.380mm x 2.410mm METALLIZATION: Type: AlSi Metal Thickness: 11kA 1kA GLASSIVATION: Type: SiO2 Thickness: 13kA 2.6kA WORST CASE CURRENT DENSITY: < 2.0 x 105A/cm2 BOND PAD SIZE: 100m x 100m 4 mils x 4 mils
Metallization Mask Layout
HCTS164MS
DS2 (2) DS1 (1) VCC (14) Q7 (13) Q6 (12)
Q0 (3) (11) Q5
Q1 (4) NC
NC (10) Q4
(5) Q2
(6) Q3
(7) GND
(8) CP
(9) (MR)
Spec Number 7
518613
HCTS164MS Intersil Space Level Product Flow - MS
Wafer Lot Acceptance, All Lots (including SEM); Method 5007 Gamma Radiation Verification, Each Wafer, 4 Samples/ Wafer, 0 Rejects, Method 1019 100% Nondestructive Bond Pull, Method 2023 Sample Wire Bond Pull Monitor, Method 2011 Sample Die Shear Monitor, Method 2019 or 2027 100% Internal Visual Inspection - Method 2010, Condition A 100% Temperature Cycling, Method 1010, Condition C, 10 Cycles 100% Constant Acceleration Method 2001, Condition per Method 5004 100% PIND, Method 2020, Condition A 100% External Visual 100% Serialization 100% Initial Electrical Test (T0) 100% Static Burn-In 1, Method 1015, Condition A or B, 24 Hours Minimum, +125oC minimum
NOTES: 1. Failures from Interim Electrical Test 1 and 2 are combined for determining PDA 1. 2. Failures from subgroups 1, 7, 9 and deltas are used for calculating PDA. The maximum allowable PDA = 5% with no more than 3% of the failures from subgroup 7. 3. Radiographic (X-Ray) inspection may be performed at any point after serialization as allowed by Method 5004. 4. Alternate Group A as allowed by MIL-STD-883, Method 5005 may be performed. 5. Data package contains: * Cover Sheet (Intersil name and/or logo, PO #, customer part #, lot date code, Intersil part #, lot #, quantity). * Wafer lot acceptance report (Method 5007). Includes reproductions of SEM photos with % step coverage. GAMMA Radiation Report. Contains cover page, disposition, rad dose, Lot #, test package used, specifications #s, test equipment, etc. radiation read and record data on file at Intersil. * X- Ray report and film. Includes pentrameter measurements. * Screening, electrical, and group A attributes (screening attributes begin after package seal). * Lot serial number sheet (good units serial # and lot #). * Variables data (all delta operations). Data is identified by serial number. The data header includes lot # and date of test. * The Certification of Conformance is part of the shipping invoice and is not part of the data book. The Certificate of Conformance is signed by an authorized quality representative.
100% Interim Electrical Test (T1) 100% Delta Calculation (T0-T1) 100% Static Burn-In 2, Method 1015, Condition A or B, 24 Hours Minimum, + 125oC Minimum 100% Interim Electrical Test 2 (T2) 100% Delta Calculation (T0-T2) 100% PDA 1, Method 5004 (see Notes 1, 2) 100% Dynamic Burn-In, Condition D, 240 Hours, +125oC or Equivalent per Method 1015 100% Interim Electrical Test 3 (T3) 100% Delta Calculation (T0-T3) 100% PDA 2, Method 5004 (see Note 2) 100% Final Electrical Test 100% Fine/Gross Leak, Method 1014 100% Radiographic, Method 2012 (see Note 3) 100% External Visual, Method 2009 Sample Group A, Method 5005 (see Note 4) 100% Data Package Generation (see Note 5)
Spec Number 8
518613
HCTS164MS
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Sales Office Headquarters
NORTH AMERICA Intersil Corporation P. O. Box 883, Mail Stop 53-204 Melbourne, FL 32902 TEL: (407) 724-7000 FAX: (407) 724-7240 EUROPE Intersil SA Mercure Center 100, Rue de la Fusee 1130 Brussels, Belgium TEL: (32) 2.724.2111 FAX: (32) 2.724.22.05 ASIA Intersil (Taiwan) Ltd. Taiwan Limited 7F-6, No. 101 Fu Hsing North Road Taipei, Taiwan Republic of China TEL: (886) 2 2716 9310 FAX: (886) 2 2715 3029
Spec Number 9

▲Up To Search▲

Price & Availability of FN3386

	To Download FN3386 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .