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| S-AU80 TOSHIBA RF Power Amplifire Module S-AU80 900 MHz Band Amplifier Applications (GSM) Unit: mm * * * Output Power: Po = 35.0 dBmW (typ.) Power Gain: Gp = 35.0 dB (typ.) Total Efficiency: T = 43% (typ.) JEDEC EIAJ TOSHIBA 5-14A Maximum Ratings (Ta = 25C) Characteristic DC Supply Voltage DC Supply Voltage DC Current Input Power Output Power Operating Case Temperature Range Storage Temperature Range Symbol VDD VGG IDD Pi Po Tc (opr) Tstg Rating 8 (Note1) 5 (Note2) 5 6 36 (Note3) -30~85 -40~110 Unit V V A dBmW dBmW C C Type Name TOSHIBA S-AU80 JAPAN Weekly cord Note1: This value is specified at no operation (VGG = 0 V, Pi = none) Note2: This value is specified at no operation (VDD = 0 V, Pi = none) Note3: This value is specified at no 50 load operation 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-05-08 1/4 S-AU80 Electrical Characteristics (Ta = 25C) Characteristic Frequency range Leakage current Output power Power gain Total efficiency Input VSWR Control current 2nd harmonics 3rd harmonics Low voltage power Isolation (Note4) Symbol frange Ileak Po Gp Eff VSWR Icont nd rd Test Condition VDD = 6.0, VGG = 0 V Pi = 0 dBmW, VDD = 3.6 V, VGG < 2.5 V = ZG = ZL = 50 Pi = 0 dBmW, VDD = 3.6 V, VGG < 2.5 V = Po = 34.5 dBmW, ZG = ZL = 50 Min 880 34.5 34.5 37 Typ. 500 35.0 35.0 43 0.5 -45 -50 34.0 -40 -30 Max 915 3.0 1.0 -35 -40 -37 Unit MHz A dBmW dB % mA dB dB dBmW dBmW 2 HRM Pi = 0 dBmW, VDD = 3.6 V, VGG < 2.5 V = Po = 34.5 dBmW, ZG = ZL = 50 3 HRM Pi = 0 dBmW, VDD = 3.2 V, VGG < 2.5 V = ZG = ZL = 50 , Tc = 85C Pi = 0 dBmW, VDD = 3.6 V, VGG = 0.3 V ZG = ZL = 50 f0 - 200 kHz Pi1 = 0 dBmW, Pi2 = -40 dBmW Pin2 = Pi1 + 200 kHz, VDD = 3.6 V Po = 7~34.5 dBmW (VGG = adjust) ZG = ZL = 50 f0 + 200 kHz VDD = 3.6 V Po = 0~34.5 dBmW (VGG = adjust) Pi = 0 dBmW, ZG = ZL = 50 f0 + 20 MHz Po-L Po-iso 33.5 dB AM-AM conversion AMcon -30 dB Switching time (Note5) tr/tf 1.0 s Noise Power NRB f0 = 915 MHz, Pin = 0 dBmW Po = 34.5 dBmW, RBW = 100 kHz VDD = 3.6 V, VGG = adjust -82 dBmW f0 + 10 MHz -78 dBmW Load Mismatch Pi = 0 dBmW, VDD = 3.2~4.3 V Po < 34.5 dBmW (VGG = adjust), ZG = 50 = VSWR LOAD 6:1 ALL PHASE Pi = 0 dBmW, VDD = 3.2~4.3 V VGG = 0~2.5 V, ZG = 50 Po < 34.5 dBmW (@ZL = 50 ) = VSWR LOAD 6:1 ALL PHASE No degradation Stability All spurious output than 60 dB below desired signal Note4: Output power Po is defined at the root point of the module output pin Po. The coefficient of output power loss in the P.C.B. output is showed as follows: 1/(S21)^2 = 1/(0.9809)^2 = 1.04 Note5: GSM pulse is applied to VGG (1/8 duty 575 s) *: This transistor is the electrostatic sensitive device. Please handle with caution. 2000-05-08 2/4 S-AU80 Schematic Pi Po VGG VDD Ground Test Circuit Pout S-AU80 VDD C1 C2 Pin C3 VGG C1: 10000 pF C2: 10 F C3: 100 pF 2000-05-08 3/4 S-AU80 Pi - Po 50 (f = 880 MHz, Tc = 25C) 50 50 Pi - Po (f = 915 MHz, Tc = 25C) 50 Po (dBmW) T (%) 40 40 40 Po (dBmW) T (%) 40 Po (dBmW) 20 20 T (%) 20 20 10 10 10 10 0 -20 -10 0 0 10 0 -20 -10 0 0 10 Pi (dBmW) Pi (dBmW) VG - Po 50 (f = 880 MHz, Tc = 25C) 50 50 VG - Po (f = 915 MHz, Tc = 25C) 50 40 40 40 40 Po (dBmW) T (%) 20 20 20 20 10 Po (dBmW) T (%) 0 1 2 10 10 Po (dBmW) T (%) 10 0 3 0 1 2 0 3 VG (V) VG (V) AM - AM conversion -25 (f = 880 MHz) (-) (+) -25 AM - AM conversion (f = 915 MHz) (-) (+) -35 AM - AM conversation AM - AM conversion -35 -45 -45 -55 -10 10 30 -55 -10 10 30 Po (dBmW) Po (dBmW) *: These are only typical curves and devices are not necessarily guaranteed at these curves. 2000-05-08 T (%) 30 30 Po (dBmW) 30 30 T (%) 30 30 Po (dBmW) 30 30 4/4 |
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