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| HN7G02FU TOSHIBA Transistor Silicon PNP Epitaxial S-MOS Planar Type (with built-in bias resistor) HN7G02FU Power Management Switch Application, Inverter Circuit Application, Driver Circuit Application and Interface Circuit Application. * The transistor and S-MOS combined allows reduced part count, thus enabling use in small-size equipment and simple system configuration. Q1 (transistor): RN2110 Equivalent Q2 (MOS-FET): 2SK1830 Equivalent Q1 Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC Rating -50 -50 -5 -100 Unit V V V mA Q2 Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Gate-source voltage DC drain current Symbol VDS VGSS ID Rating 20 10 50 Unit V V mA FT Q1, Q2 Common Ratings (Ta = 25C) Characteristics Collector power dissipation Junction temperature Storage temperature range Symbol PC (Note) Tj Tstg 150 -55~150 C C 6 5 4 Rating 200 Unit mW Marking Equivalent Circuit (top view) Note: Total rating Q1 Q2 1 2 3 961001EAA1 * TOSHIBA is continually working to improve the quality and the reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to observe standards of safety, and to avoid situations in which a malfunction or failure of a TOSHIBA product could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent products specifications. Also, please keep in mind the precautions and conditions set forth in the TOSHIBA Semiconductor Reliability Handbook. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 2000-03-23 1/5 HN7G02FU Q1 (transistor) Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Input resistor Symbol ICBO IEBO hFE VCE (sat) R1 Test Condition VCB = -50 V, IE = 0 VEB = -5 V, IC = 0 VCE = -5 V, IC = -1 mA IC = 5 mA, IB = -0.25 mA Min 120 3.29 Typ. -0.1 4.7 Max -100 -100 400 -0.3 6.11 V k Unit nA nA Q2 (MOS-FET) Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain-source breakdown voltage Drain cut-off current Gate threshold voltage Forward transfer admittance Drain-source ON resistance Symbol IGSS V (BR) DSS IDSS Vth Yfs RDS (ON) Test Condition VGS = 10 V, VDS = 0 ID = 100 A, VGS = 0 VDS = 20 V, VGS = 0 VDS = 3 V, ID = 0.1 mA VDS = 3 V, ID = 10 mA ID = 10 mA VGS = 2.5 V Min 20 0.5 20 Typ. 20 Max 1 1 1.5 40 Unit A V A V mS 2000-03-23 2/5 HN7G02FU Q1 (Transistor) IC - VI (ON) -3000 -50 -30 IC - VI (OFF) (A) Collector current IC -10 -5 -3 Ta = 100C 25 -25 -1 Common emitter -0.5 -0.3 -0.1 -0.3 -1 -3 VCE = -0.2 V -10 -30 -100 Collector current IC (A) -1000 -500 -300 Ta = 100C 25 -25 -100 -50 -30 -0 -0.2 -0.4 -0.6 -0.8 -1 Common emitter VCE = -5 V -1.2 -1.4 -1.6 Input voltage VI (ON) (V) Input voltage VI (OFF) (V) hFE - IC -3000 -3 VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) -1000 -1 -0.5 -0.3 DC current gain hFE -500 -300 Ta = 100C 25 -100 -50 -30 Common emitter VCE = -5 V -10 -0.1 -0.3 -1 -3 -10 -30 -100 -25 -0.1 -0.05 -0.03 Ta = 100C -25 25 Common emitter IC/IB = 20 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector current IC (mA) Collector current IC (mA) 2000-03-23 3/5 HN7G02FU Q2 (MOS-FET) (a) Switching time test circuit 2.5 V IN 50 0 10 S VIN RL ID OUT VDD = 3 V D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C 2.5 V (b) VIN VGS 0 VDD (c) VOUT VDS VDS (ON) ton 90% tr toff tf 90% 10% 10% VDD ID - VDS 60 Common source Ta = 25C 50 2.5 2.2 1.0 2.5 1.2 1.2 ID - VDS ( ) Common source Ta = 25C 1.1 (mA) 40 (mA) Drain current ID 2.0 0.8 1.05 0.6 Drain current ID 30 1.8 20 1.6 VGS = 1.4 V 1.2 0.4 VGS = 1.0 V 0.95 0.9 0.8 10 0.2 0 0 2 4 6 8 10 12 0 0 0.1 0.2 0.3 0.4 0.5 0.6 Drain-source voltage VDS (V) Drain-source voltage VDS (V) IDR - VDS 50 30 10 5 3 1 0.5 0.3 S 0.1 0.05 0.03 0.01 0 G Common source VGS = 0 Ta = 25C 50 30 10 ID - VGS Common source VDS = 3 V (mA) (mA) D 5 3 1 0.5 0.3 0.1 0.05 0.03 0.01 0 Ta = 100C IDR IDR Drain current ID 25 -25 -0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 1 2 3 4 5 Drain-source voltage VDS (V) Gate-source voltage VGS (V) 2000-03-23 4/5 HN7G02FU Yfs - ID 100 100 Common source 50 VDS = 3 V Ta = 25C 50 30 Common source VGS = 0 V f = 1 MHz Ta = 25C C - VDS Forward transfer admittance Yfs (mS) 30 (pF) Capacitance C 10 5 3 Ciss Coss Crss 1 0.5 0.3 0.1 10 5 3 0.5 1 3 5 10 30 50 100 0.3 0.5 1 3 5 10 20 Drain current ID (mA) Drain-source voltage VDS (V) VDS (ON) - ID 3000 Common source VGS = 2.5 V 1000 Ta = 25C 500 300 1000 t - ID Drain-source ON resistance VDS (ON) (mV) Switching time t (ns) toff tf 100 ton tr ID 2.5 V 0 50 VIN 10 s VOUT RL VDD = 3 V 10 3 D.U. < 1% = VIN: tr, tf < 5 ns (Zout = 50 ) Common source Ta = 25C 30 100 100 50 30 10 5 0.5 10 0.3 1 3 5 10 30 50 100 1 Drain current ID (mA) Drain current ID (mA) PD - Ta 200 (mW) Power Dissipation PD 150 100 50 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) 2000-03-23 5/5 |
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