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FUJITSU SEMICONDUCTOR DATA SHEET
DS04-27300-3E
ASSP
VOLTAGE DETECTOR
MB3761
s DESCRIPTION
Designed for voltage detector applications, the Fujitsu MB3761 is a dual comparator with a built-in high precision reference voltage generator. Outputs are open-collector outputs and enable use of the OR-connection between both channels. Both channels have hysteresis control outputs. Because of a wide power supply voltage range and a low power supply current, the MB3761 is suitable for power supply monitors and battery backup systems.
s FEATURES
* * * * * Wide power supply voltage range: 2.5 V to 40 V Low power and small voltage dependency supply current: 250 A Typ Built-in stable low voltage generator: 1.20 V Typ Easy-to-add hysteresis characteristics. Package: 8-pin Plastic SIP Package (Suffix: -PS) 8-pin Plastic DIP Package (Suffix: -P) 8-pin Plastic SOP Package (Suffix: -PF)
s PACKAGE
8-pin plastic DIP 8-pin plastic SIP 8-pin plastic SOP
(DIP-8P-M01)
(SIP-8P-M03)
(FPT-8P-M01)
Note : This device contains circuitry to protect the inputs against damage due to high static voltages or electric fields. However, it is advised that normal precautions be taken to avoid application of any voltage higher than maximum rated voltages to this high impedance circuit.
MB3761
s PIN ASSIGNMENT
(FRONT VIEW) (TOP VIEW)
B
8 (+) 7 6 (-) 5
VCC HYS-B OUT-B GND OUT-A IN-A HYS-A IN-B
IN-B
1 B
(+) (-)
8
VCC
HYS-A
2 (+) A (-)
7
HYS-B
A (-) (+)
4 3 2 1
IN-A
3
6
OUT-B
OUT-A
4
5
GND
(DIP-8P-M01) (SIP-8P-M03) (FPT-8P-M01)
2
MB3761
s ABSOLUTE MAXIMUM RATINGS
Parameter Power Supply Voltage Output Voltage Output Current Input Voltage Power Dissipation Storage Temperature Symbol VCC VO IO VIN PD TSTG Rating Min - 0.3 - 55 Max 41 41 50 + 6.5 350 (TA +70C) + 125 Unit V V mA V mW
C
WARNING: Semiconductor devices can be permanently damaged by application of stress (voltage, current, temperature, etc.) in excess of absolute maximum ratings. Do not exceed these ratings.
s RECOMMENDED OPERATING CONDITIONS
Parameter Power Supply Voltage Operating Temperature Output Current at pin 4 Output Current at pin 6 Symbol VCC TA IO4 IO6 Value Min 2.5 - 20 Max 40 + 75 4.5 3.0 Unit V C mA mA
WARNING: The recommended operating conditions are required in order to ensure the normal operation of the semiconductor device. All of the device's electrical characteristics are warranted when the device is operated within these ranges. Always use semiconductor devices within their recommended operating condition ranges. Operation outside these ranges may adversely affect reliability and could result in device failure. No warranty is made with respect to uses, operating conditions, or combinations not represented on the data sheet. Users considering application outside the listed conditions are advised to contact their FUJITSU representatives beforehand.
3
MB3761
s ELECTRICAL CHARACTERISTICS
(TA=+25C, VCC=5 V) Parameter Power Supply Voltage Threshold Voltage Deviation of Threshold Voltage Offset Voltage between Outputs Temperature Coefficient of Threshold Voltage Difference Voltage on Threshold Voltage between Channel Input Current Output Leakage Current Hysteresis Output Leakage Current Output Sink Current Hysteresis Current Output Saturation Voltage Hysteresis Saturation Output Delay Time Symbol ICCL ICCH VTH Conditions VCC= 40 V, VIL= 1.0 V VCC= 40 V, VIH= 1.5 V IO = 2 mA, VO= 1 V 2.5 V VCC 5.5 V 4.5 V VCC 40 V IOA= 4.5 mA, VOA= 2 V, IHA= 20 A, VHA= 3 V IOB= 3 mA, VOB= 2 V, IHB= 3 mA, VHB= 2 V -20C TA +70C Value Min 1.15 -10 VIL= 1.0 V VIH= 1.5 V VO= 40 V, VIL= 1.0 V VCC= 40 V, VHA= 0 V, VIL= 1.0 V VHB= 40 V, VIH= 1.5 V VO= 1.0 V, VIH= 1.5 V VO= 1.0 V, VIH= 1.5 V VH= 0 V, VIH= 1.5 V VH= 1.0 V,VIL = 1.0 V IO= 4.5 mA, VIH= 1.5 V IO= 3.0 mA, VIH= 1.5 V IH= 20 A, VIH= 1.5 V IH= 3.0 mA, VIL= 1.0 V RL= 5 k RL= 5 k 6 4 40 4 Typ 250 400 1.20 3 10 2.0 2.0 Max 400 600 1.25 12 40 -10 Unit A A V mV mV mV mV mV/C mV nA 500 1 0.1 1 400 400 200 400 nA A A A mA mA A mA mV mV mV mV s s
VTH1 VTH2
VOOSA VOSSB
0.05
5 100 12 10 80 10 120 120 50 120 2 3
VTHAB
IIL IIH IOH IHLA IHHB IOLA IOLB IHHA IHLB VOLA VOLB VHHA VHLB tPHL tPLH
4
MB3761
s EQUIVALENT CIRCUIT
8 V CC
HYS-A
2
OUT-A
4 V REF 1.2 V
7
HYS-B
5
GND
3 IN-A
1 IN-B
6 OUT-B
s OPERATIONAL DEFINITIONS
VO(A) VIN R4 R1 1 R5 2 R3 3 4 R2 6 VO(B) 5 VO(A) OUT-A GND VIN VIL(B) VIH(B) VO(B) VIN 7 8 V H(B) HYS-B OUT-B VH(B) R6 RL RL VIL(A) VIH(A) VIN VCC
(NOTE)
VIH(A) = (1 + R1 )VR R2 VIL(A) = (1 + R1 )VR R2 // R3 R1VCC R3 R4 VIH(B) = (1 + ) VR R5 // R6 VIL(B) = (1 + R4 ) VR R5 . VR . . VTH (= 1.20 V) = . R2 // R3 = R2 R3 R2 + R3 R5 R6 R5 + R6
R5 // R6 =
5
MB3761
s TYPICAL PERFORMANCE CHARACTERISTICS
Power Supply Current vs. Power Supply Voltage
500 +70C +25C
Hysteresis (A) Current vs. Power Supply Voltage
150
Hysteresis (A) Current IHHA (A)
Power Supply Current ICC (A)
+70C 120 +25C
400 VIH = 1.5 V 300
-20C
+70C
-20C
90 VIH = 1.5 V 60
200
-20C
VIL = 1.0 V +25C
100
30
00
10
20
30
40
00
10
20
30
40
Power Supply Voltage VCC (V)
Power Supply Voltage VCC (V)
Output (A) Voltage vs. Output (A) Current
1.0
Output (B) Voltage vs. Output (B) Current
1.0
Output (A) Voltage VOLA (V)
Output (B) Voltage VOLB (V)
-20C
0.8 VCC = 5 V VIH = 1.5 V 0.6
+25C
-20C
0.8 VCC = 5 V VIH = 1.5 V 0.6
+25C +70C
+70C
0.4
0.4
0.2
0.2
0
0
5
10
15
20
25
0
0
5
10
15
20
25
Output (A) Current IOL(A) (mA)
Output (B) Current IOL(B) (mA)
Threshold Voltage vs. Power Supply Voltage
1.22
Threshold Voltage vs. Temperature
1.22
Threshold Voltage VTH (V)
Threshold Voltage VTH (V)
1.21
1.21
1.20 Ta = +25C
1.20
1.19
1.19 V CC = 5 V 1.18
1.18
1.17 0
10
20
30
40
1.17-20
0
20
40
60
80
Power Supply Voltage VCC (V)
Temperature Ta (C)
6
MB3761
s APPLICATION EXAMPLES
1. Addition of Hysteresis
VO(A) VCC (VIN) R1 1 R2 2 3 4 R3 8 RL 7 6 VO(A) 5 R1 + R2 . VIH(A) = (1 + )V R . R3 GND .. VIL(A) = (1 + R2 )V R R3 VIL(A) VIH(A) VIN (VCC)
VCC R1 1 R2 2 3 R3 4 8 7 6 5 C1 RL
VH(B)
VIH VH(B) VO(B) VIH GND VIL(B) VIH(B) VO(B)
Note : All calculations occur with the output voltage at 0. The hysteresis values are adjusted for load condition and saturation voltage.
VIH(B) . . (1 + R1 )V R = R2 R1 . (1 + VIL(B) = )V R . R2 + R3
2. Voltage Detection for Alarm
VO VCC R3 RL R1 1 2 3 4 R2 R4 GND 8 7 6 5 VCCH = (1 + R1 )VR R2 VCCL = (1 + R3 )VR R4 VO VCCL VCCH VCC
For hysteresis, a positive feedback from pin 2 or 7 is required.
VCCL 2.5 V
7
MB3761
3. Voltage Detection for Alarm
VO
VCC R3 R1 R4 1 2 3 4 R2 GND VCCH = (1 + R3 )VR R4 8 7 6 5 VO VCCL VCCH VCC RL
VCCL 2.5 V
VCCL = (1 + R1 )VR R2
4. Programmable Zener
V CC R1 VZ R2 1 2 3 R3 4 8 7 6 5 V Z = (1 + R 2 ) V R R3 VZ R2 + R3 V CC - V Z R1 6 mA
GND
Note : Channel B can be used independently.
8
MB3761
5. Recovery Reset Circuit
V CC = 5 V R1 15 k
R2 3.3 k
R4 330 k 1 2 3 8 7 6 5 R5 6.8 k OUT
6.8 k R3 0.1 F C1
4
OUT
GND
9
MB3761
s TYPICAL CHARACTERISTICS
DC Characteristics
6 V CC (V) 5 V CC (L)
Response Characteristics
V CC V CC (H)
V O (V)
4
0 4.4 t RST 30 ms VO
V O (V) 0 1 2 3 V CC (V) 4 5 6
VCCH = VCCL + R1 (R2 + R3 ) VTH R3 R4 = -C1 R4 * In
2
0
0
*
Voltage Threshold Levels (VCCL and VCCH) and Hysteresis Width can be changed by the resistors (R1 through R4). R1 + R2 + R3 VCCL = VTH R3
*
Power-On Reset Time is provided by the following approximate equation: tRST
{ 1 - VCC
VTH
(1 +
R1 R2 + R3
)
* * *
The recommended value of hFE of the external transistor is from 50 to 200. In the case of an instant power fail, the remaining charge in C1 effects tRST. If necessary, the reversed output is provided on HYS terminal
10
MB3761
s NOTES ON USE
* Take account of common impedance when designing the earth line on a printed wiring board. * Take measures against static electricity. - For semiconductors, use antistatic or conductive containers. - When storing or carrying a printed circuit board after chip mounting, put it in a conductive bag or container. - The work table, tools and measuring instruments must be grounded. - The worker must put on a grounding device containing 250 k to 1 M resistors in series. * Do not apply a negative voltage - Applying a negative voltage of -0.3 V or less to an LSI may generate a parasitic transistor, resulting in malfunction.
s ORDERING INFORMATION
Part number MB3761M MB3761PS MB3761PF Package 8-pin Plastic DIP (DIP-8P-M01) 8-pin Plastic SIP (SIP-8P-M03) 8-pin Plastic SOP (FPT-8P-M01) Remarks
11
MB3761
s PACKAGE DIMENSION
8-pin Plastic DIP (DIP-8P-M01)
9.40 -0.30
+0.40 +.016
.370 -.012
1 PIN INDEX
6.200.25 (.244.010)
4.36(.172)MAX
0.51(.020)MIN 0.250.05 (.010.002)
3.00(.118)MIN
0.460.08 (.018.003) 15MAX
0.99 -0 .039 0.89 .035
+0.30 +.012 -0 +0.35 -0.30 +.014 -.012
1.52 -0 .060
+0.30 +.012 -0
7.62(.300) TYP
2.54(.100) TYP
C
1994 FUJITSU LIMITED D08006S-2C-3
Dimensions in mm (inches) . Note : The values in parentheses are reference values.
(Continued)
12
MB3761
8-pin Plastic SIP (SIP-8P-M03)
19.65 -0.35 .774
+0.15 +.006 -.014
3.260.25 (.128.010)
INDEX-1 6.200.25 (.244.010) INDEX-2 8.200.30 (.323.012)
0.99 -0
+0.30 +.012
.039 -0
4.000.30 (.157.012)
2.54(.100) TYP
1.52 -0
+0.30 +.012
.060 -0
0.500.08 (.020.003)
0.250.05 (.010.002)
C
1994 FUJITSU LIMITED S08010S-3C-2
Dimensions in mm (inches) . Note : The values in parentheses are reference values.
(Continued)
13
MB3761
8-pin Plastic SOP (FPT-8P-M01)
Note 1) *1 : These dimensions include resin protrusion. Note 2) *2 : These dimensions do not include resin protrusion. Note 3) Pins width and pins thickness include plating thickness. Note 4) Pins width do not include tie bar cutting remainder.
+0.25 +.010
*1 6.35 -0.20 .250 -.008
8
0.17 -0.04 .007 -.002
+0.03 +.001
5
INDEX
*2 5.300.30 7.800.40 (.209.012) (.307.016)
Details of "A" part 2.00 -0.15 .079 -.006
1 4
+0.25 +.010
(Mounting height)
"A" 0.13(.005)
0.25(.010) 0~8
1.27(.050)
0.470.08 (.019.003)
M
0.500.20 (.020.008) 0.600.15 (.024.006)
0.10 -0.05
+0.10 +.004
.004 -.002 (Stand off)
0.10(.004)
C
2002 FUJITSU LIMITED F08002S-c-6-7
Dimensions in mm (inches) . Note : The values in parentheses are reference values
14
MB3761
FUJITSU LIMITED
All Rights Reserved. The contents of this document are subject to change without notice. Customers are advised to consult with FUJITSU sales representatives before ordering. The information, such as descriptions of function and application circuit examples, in this document are presented solely for the purpose of reference to show examples of operations and uses of Fujitsu semiconductor device; Fujitsu does not warrant proper operation of the device with respect to use based on such information. When you develop equipment incorporating the device based on such information, you must assume any responsibility arising out of such use of the information. Fujitsu assumes no liability for any damages whatsoever arising out of the use of the information. Any information in this document, including descriptions of function and schematic diagrams, shall not be construed as license of the use or exercise of any intellectual property right, such as patent right or copyright, or any other right of Fujitsu or any third party or does Fujitsu warrant non-infringement of any third-party's intellectual property right or other right by using such information. Fujitsu assumes no liability for any infringement of the intellectual property rights or other rights of third parties which would result from the use of information contained herein. The products described in this document are designed, developed and manufactured as contemplated for general use, including without limitation, ordinary industrial use, general office use, personal use, and household use, but are not designed, developed and manufactured as contemplated (1) for use accompanying fatal risks or dangers that, unless extremely high safety is secured, could have a serious effect to the public, and could lead directly to death, personal injury, severe physical damage or other loss (i.e., nuclear reaction control in nuclear facility, aircraft flight control, air traffic control, mass transport control, medical life support system, missile launch control in weapon system), or (2) for use requiring extremely high reliability (i.e., submersible repeater and artificial satellite). Please note that Fujitsu will not be liable against you and/or any third party for any claims or damages arising in connection with above-mentioned uses of the products. Any semiconductor devices have an inherent chance of failure. You must protect against injury, damage or loss from such failures by incorporating safety design measures into your facility and equipment such as redundancy, fire protection, and prevention of over-current levels and other abnormal operating conditions. If any products described in this document represent goods or technologies subject to certain restrictions on export under the Foreign Exchange and Foreign Trade Law of Japan, the prior authorization by Japanese government will be required for export of those products from Japan.
F0308 (c) FUJITSU LIMITED Printed in Japan

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