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DISCRETE SEMICONDUCTORS
DATA SHEET
BLF521 UHF power MOS transistor
Product specification November 1992
Philips Semiconductors
Product specification
UHF power MOS transistor
FEATURES * High power gain * Easy power control * Gold metallization * Good thermal stability * Withstands full load mismatch * Designed for broadband operation.
4 g
MBB072
BLF521
PIN CONFIGURATION
ook, halfpage
1
2
3
d
s
DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 4-lead, SOT172D studless envelope, with a ceramic cap. All leads are isolated from the mounting base. PINNING - SOT172D PIN 1 2 3 4 gate drain source DESCRIPTION source
Top view
MSB007
Fig.1 Simplified outline and symbol.
CAUTION The device is supplied in an antistatic package. The gate-source input must be protected against static charge during transport and handling. WARNING Product and environmental safety - toxic materials This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.
QUICK REFERENCE DATA RF performance at Tamb = 25 C in a common source test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 PL (W) 2 Gp (dB) > 10 D (%) > 50
November 1992
2
Philips Semiconductors
Product specification
UHF power MOS transistor
LIMITING VALUES In accordance with the Absolute Maximum System (IEC 134). SYMBOL VDS VGS ID Ptot Tstg Tj PARAMETER drain-source voltage gate-source voltage DC drain current total power dissipation storage temperature junction temperature up to Tmb = 25 C CONDITIONS - - - - -65 - MIN.
BLF521
MAX. 40 20 1 10 150 200
UNIT V V A W C C
THERMAL RESISTANCE SYMBOL Rth j-mb Rth j-a Note 1. Mounted on printed circuit board, see Fig.12. PARAMETER thermal resistance from junction to mounting base thermal resistance from junction to ambient (note 1) THERMAL RESISTANCE 17.5 K/W 75 K/W
handbook, halfpage
5
MRA989
handbook, halfpage
16
MDA486
Ptot (W)
ID (A)
12
(2)
1
(1) (2)
(1)
8
4
0.1
1
10
VDS (V)
100
0 0 40 80 120 160 Tmb ( C)
(1) Current in this area may be limited by RDS(on). (2) Tmb = 25 C.
(1) Continuous operation. (2) Short-time operation during mismatch.
Fig.2 DC SOAR.
Fig.3 Power/temperature derating curves.
November 1992
3
Philips Semiconductors
Product specification
UHF power MOS transistor
CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL V(BR)DSS IDSS IGSS VGS(th) gfs RDS(on) IDSX Cis Cos Crs PARAMETER drain-source breakdown voltage drain-source leakage current gate-source leakage current gate-source threshold voltage forward transconductance drain-source on-state resistance on-state drain current input capacitance output capacitance feedback capacitance CONDITIONS VGS = 0; ID = 3 mA VGS = 0; VDS = 12.5 V VGS = 20 V; VDS = 0 ID = 3 mA; VDS = 10 V ID = 0.3 A; VDS = 10 V ID = 0.3 A; VGS = 15 V VGS = 15 V; VDS = 10 V VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz VGS = 0; VDS = 12.5 V; f = 1 MHz MIN. 40 - - 2 80 - - - - - TYP. - - - - 135 3.5 1.3 5.3 7.8 1.8
BLF521
MAX. UNIT - 10 1 4.5 - 4 - - - - V A A V mS A pF pF pF
handbook, halfpage
15
MDA485
handbook, halfpage
1600
MDA484
T.C (mV/K) 10
ID (mA) 1200
5
800
0
400
-5 1
0 10 102 ID (A) 103 0 4 8 12 16 20 VGS (V)
VDS = 10 V.
VDS = 10 V; Tj = 25 C.
Fig.4
Temperature coefficient of gate-source voltage as a function of drain current, typical values.
Fig.5
Drain current as a function of gate-source voltage, typical values.
November 1992
4
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
handbook, halfpage
5
MDA483
RDSon () 4
handbook, halfpage
30
MDA482
C (pF) 20
3 Cos 2 10 Cis 1
0 0 40 80 120 Tj (C) 160
0 0 4 8 12 VDS (V) 16
ID = 0.3 A; VGS = 15 V.
VGS = 0; f = 1 MHz.
Fig.6
Drain-source on-state resistance as a function of junction temperature, typical values.
Fig.7
Input and output capacitance as functions of drain-source voltage, typical values.
handbook, halfpage
5
MDA481
Crs (pF)
4
3
2
1
0 0 4 8 12 VDS (V) 16
VGS = 0; f = 1 MHz.
Fig.8
Feedback capacitance as a function of drain-source voltage, typical values.
November 1992
5
Philips Semiconductors
Product specification
UHF power MOS transistor
APPLICATION INFORMATION FOR CLASS-B OPERATION Tamb = 25 C; RGS = 274 , unless otherwise specified. RF performance in a common source class-B test circuit. MODE OF OPERATION CW, class-B f (MHz) 500 VDS (V) 12.5 IDQ (mA) 10 PL (W) 2 GP (dB) > 10 typ. 13
BLF521
D (%) > 50 typ. 60
Ruggedness in class-B operation The BLF521 is capable of withstanding a load mismatch corresponding to VSWR = 50:1 through all phases under the following conditions: VDS = 15.5 V; f = 500 MHz at rated output power.
handbook, halfpage
20 Gp
MDA480
100 D (%) 80
handbook, halfpage
4
MDA479
(dB) 16
PL (W) 3
Gp D
12
60 2
8
40 1
4
20
0 0.5
1.5
2.5
PL (W)
0 3.5
0 0 0.2 0.4 0.6 0.8 1.0 PIN (W)
Class-B operation; VDS = 12.5 V; IDQ = 10 mA; ZL = 9.5 + j12.8; f = 500 MHz.
Class-B operation; VDS = 12.5 V; IDQ = 20 mA; ZL = 9.5 + j12.8; f = 175 MHz.
Fig.9
Power gain and efficiency as functions of load power, typical values.
Fig.10 Load power as a function of input power, typical values.
November 1992
6
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
handbook, full pagewidth
50 input
C1
,,,,, ,,,,, ,,,,,
C12 L1 L2 C3 L3 D.U.T. L5 L8 L9 L4 BLF521 C13 C14 C2 C4 R1 L6 C7 C5 C8 R6 C11 R2 R3 C6 C10 +VD R4 R5
MDA475
L10 C15
50 output
L7 C9
f = 500 MHz.
Fig.11 Test circuit for class-B operation.
November 1992
7
Philips Semiconductors
Product specification
UHF power MOS transistor
List of components (class-AB test circuit) COMPONENT C1, C5, C8, C15 C2, C13 C3 C4 C6, C11 C7, C9 C10 C12 C14 L1 L2 L3 L4, L5 L6 DESCRIPTION multilayer ceramic chip capacitor (note 1) film dielectric trimmer multilayer ceramic chip capacitor (note 2) film dielectric trimmer multilayer ceramic chip capacitor multilayer ceramic chip capacitor electrolytic capacitor multilayer ceramic chip capacitor (note 2) film dielectric trimmer stripline (note 3) stripline (note 3) stripline (note 3) stripline (note 3) 5 turns enamelled 0.5 mm copper wire grade 3B Ferroxcube RF choke stripline (note 3) stripline (note 3) stripline (note 3) 0.4 W metal film resistor 0.4 W metal film resistor 0.4 W metal film resistor cermet potentiometer 0.4 W metal film resistor 1 W metal film resistor 83 83 83 274 1.96 k 1 M 5 k 7.5 k 10 18.6 x 2 mm 31.6 x 2 mm 2 x 2 mm VALUE 390 pF, 500 V 2 to 9 pF 5.6 pF, 500 V 2 to 18 pF 2 x 100 nF in parallel, 50 V 100 nF, 50 V 10 F, 63 V 9.1 pF, 50 V 1.4 to 5.5 pF 83 83 83 67 62 nH 20 x 2 mm 21 x 2 mm 19 x 2 mm 12 x 3 mm length 3.75 mm int. dia. 3 mm leads 2 x 4 mm DIMENSIONS
BLF521
CATALOGUE NO.
2222 809 09002
2222 809 09003 2222 852 47104 2222 852 47104 2222 030 38109
2222 809 09001
L7 L8 L9 L10 R1 R2 R3 R4 R5 R6 Notes
4312 020 36642
2322 151 72741 2322 151 71962 2322 151 71005 2322 151 77502 2322 153 51009
1. American Technical Ceramics (ATC) capacitor, type 100B or other capacitor of the same quality. 2. American Technical Ceramics (ATC) capacitor, type 100A or other capacitor of the same quality. 3. The striplines are on a double copper-clad printed circuit board, with PTFE fibre-glass dielectric (r = 2.2), thickness 1.6 mm.
November 1992
8
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
handbook, full pagewidth
R4 C11
+VDS C9 C10
R3 R2 C3 L1 C1 C2 C4 L2 L3 C7 C6 L4 C5
R6 C8 R1 L5 L6 L8
L7
C12 L9
C15 L10
C13
C14
MBA381
handbook, full pagewidth
150 mm
rivets strap rivets 70 mm strap rivets mounting screws (6x)
MBA380
strap
strap
The circuit and components are situated on one side of the printed circuit board, the other side being fully metallized, to serve as a ground plane. Earth connections are made by means of copper straps and hollow rivets for a direct contact between upper and lower sheets.
Fig.12 Component layout for 500 MHz test circuit.
November 1992
9
Philips Semiconductors
Product specification
UHF power MOS transistor
BLF521
handbook, halfpage
50
MDA478
handbook, halfpage
50 ZL
MDA477
Zi () 0
() ri 40
30 RL xi 20 XL
-50
10
-100 100
200
300
400
f (MHz)
500
0 100
200
300
400
f (MHz)
500
Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 ; PL = 2 W.
Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 ; PL = 2 W.
Fig.13 Input impedance as a function of frequency (series components), typical values per section.
Fig.14 Load impedance as a function of frequency (series components), typical values.
handbook, halfpage
20 Gp
MDA476
(dB) 16
12
handbook, halfpage
8
4 Zi ZL
MBA379
0 100
200
300
400
f (MHz)
500
Class-B operation; VDS = 12.5 V; IDQ = 10 mA; RGS = 274 ; PL = 2 W.
Fig.15 Definition of MOS impedance.
Fig.16 Power gain as a function of frequency, typical values.
November 1992
10
Philips Semiconductors
Product specification
UHF power MOS transistor
Common emitter S-parameters Measured at VDS = 12.5 V and ID = 100 mA. f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 S11 MAGNITUDE (ratio) 0.968 0.864 0.701 0.626 0.587 0.580 0.580 0.581 0.588 0.596 0.605 ANGLE (deg) -24.0 -55.4 -91.0 -112.4 -127.0 -137.1 -144.6 -151.7 -157.6 -163.5 -168.8 S21 MAGNITUDE (ratio) 10.749 9.105 6.353 4.693 3.622 2.959 2.498 2.131 1.874 1.656 1.473 ANGLE (deg) 161.5 138.3 112.7 97.0 85.6 76.5 68.8 61.4 54.7 48.8 43.0 S12 MAGNITUDE (ratio) 0.044 0.094 0.130 0.140 0.141 0.139 0.135 0.130 0.123 0.115 0.107 ANGLE (deg) 72.6 51.7 29.7 17.2 9.4 4.0 0.0 -2.5 -4.3 -4.8 -4.4
BLF521
S22 MAGNITUDE (ratio) 0.900 0.828 0.735 0.693 0.678 0.675 0.675 0.677 0.677 0.683 0.689 ANGLE (deg) -27.4 -62.4 -100.8 -122.7 -136.3 -145.4 -152.1 -157.5 -162.3 -166.9 -171.2
Measured at VDS = 12.5 V and ID = 150 mA. f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 S11 MAGNITUDE (ratio) 0.965 0.857 0.691 0.622 0.588 0.580 0.582 0.586 0.588 0.599 0.609 ANGLE (deg) -25.9 -58.7 -95.1 -116.7 -130.3 -140.8 -147.8 -154.9 -160.5 -166.3 -171.7 S21 MAGNITUDE (ratio) 11.435 9.534 6.529 4.783 3.663 2.988 2.515 2.154 1.897 1.673 1.493 ANGLE (deg) 160.6 136.8 111.3 96.0 84.8 75.9 68.4 61.2 54.6 48.8 43.0 S12 MAGNITUDE (ratio) 0.044 0.092 0.125 0.134 0.135 0.133 0.128 0.123 0.117 0.111 0.103 ANGLE (deg) 72.0 50.1 28.6 16.7 9.2 4.3 0.7 -1.3 -2.6 -2.6 -1.7 S22 MAGNITUDE (ratio) 0.876 0.804 0.715 0.678 0.666 0.665 0.666 0.668 0.669 0.675 0.681 ANGLE (deg) -29.2 -65.7 -104.3 -125.8 -138.8 -147.5 -154.0 -159.1 -163.8 -168.1 -172.3
November 1992
11
Philips Semiconductors
Product specification
UHF power MOS transistor
Measured at VDS = 12.5 V and ID = 200 mA. f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 S11 MAGNITUDE (ratio) 0.965 0.851 0.688 0.623 0.590 0.585 0.583 0.589 0.593 0.602 0.612 ANGLE (deg) -26.7 -60.7 -97.5 -118.8 -132.7 -142.4 -150.0 -156.7 -162.2 -167.8 -173.0 S21 MAGNITUDE (ratio) 11.660 9.625 6.524 4.751 3.644 2.968 2.495 2.137 1.877 1.656 1.476 ANGLE (deg) 160.1 135.9 110.5 95.2 84.3 75.3 67.8 60.7 54.3 48.4 42.8 S12 MAGNITUDE (ratio) 0.044 0.091 0.123 0.131 0.132 0.130 0.126 0.120 0.114 0.108 0.100 ANGLE (deg) 71.4 49.4 27.9 16.4 9.2 4.3 1.0 -0.8 -1.9 -1.7 -0.5
BLF521
S22 MAGNITUDE (ratio) 0.854 0.783 0.699 0.666 0.657 0.658 0.659 0.662 0.664 0.670 0.677 ANGLE (deg) -30.4 -67.7 -106.5 -127.6 -140.3 -148.7 -155.0 -160.0 -164.6 -168.9 -173.0
Measured at VDS = 12.5 V and ID = 250 mA. f (MHz) 40 100 200 300 400 500 600 700 800 900 1000 S11 MAGNITUDE (ratio) 0.963 0.848 0.686 0.624 0.594 0.585 0.590 0.595 0.601 0.607 0.613 ANGLE (deg) -27.3 -62.0 -99.3 -120.3 -134.2 -143.9 -150.8 -157.6 -163.1 -168.8 -174.1 S21 MAGNITUDE (ratio) 11.640 9.567 6.434 4.674 3.582 2.914 2.447 2.097 1.840 1.625 1.447 ANGLE (deg) 159.7 135.2 109.8 94.6 83.8 74.7 67.4 60.3 53.8 48.0 42.2 S12 MAGNITUDE (ratio) 0.045 0.092 0.123 0.130 0.130 0.128 0.124 0.119 0.113 0.106 0.099 ANGLE (deg) 70.8 48.9 27.4 16.0 8.9 4.2 0.9 -0.6 -1.7 -1.3 -0.1 S22 MAGNITUDE (ratio) 0.832 0.766 0.688 0.657 0.651 0.651 0.654 0.658 0.660 0.667 0.673 ANGLE (deg) -31.3 -69.2 -108.2 -128.9 -141.3 -149.6 -155.8 -160.7 -165.2 -169.4 -173.3
November 1992
12
Philips Semiconductors
Product specification
UHF power MOS transistor
PACKAGE OUTLINE Studless ceramic package; 4 leads
BLF521
SOT172D
D
A Q c D1
H b
4
b1 H
1
3
2
0
5 scale
10 mm
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT mm inches A 3.71 2.89 0.146 0.114 b 3.31 3.04 0.13 0.12 b1 0.89 0.63 c 0.16 0.10 D 5.20 4.95 D1 5.33 5.08 H 26.17 24.63 1.03 0.97 Q 1.15 0.88 0.045 0.035
0.035 0.006 0.025 0.004
0.205 0.210 0.195 0.200
OUTLINE VERSION SOT172D
REFERENCES IEC JEDEC EIAJ
EUROPEAN PROJECTION
ISSUE DATE 97-06-28
November 1992
13
Philips Semiconductors
Product specification
UHF power MOS transistor
DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values
BLF521
This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications.
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.
November 1992
14

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