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| (R) STTH506TTI Tandem 600V HYPERFAST RECTIFIER MAJOR PRODUCTS CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) IRM (typ.) 5A 600 V (in series) 150 C 2.6 V 3.6 A 1 2 3 1 2 3 FEATURES AND BENEFITS ESPECIALLY SUITED AS BOOST DIODE IN CONTINUOUS MODE POWER FACTOR CORRECTORS AND HARD SWITCHING CONDITIONS DESIGNED FOR HIGH dIF/dt OPERATION. HYPERFAST RECOVERY CURRENT TO COMPETE WITH SiC DEVICES. ALLOWS DOWNSIZING OF MOSFET AND HEATSINKS INTERNAL CERAMIC INSULATED DEVICES WITH EQUAL THERMAL CONDITIONS FOR BOTH 300V DIODES INSULATION (2500VRMS) ALLOWS PLACEMENT ON SAME HEATSINK AS MOSFET FLEXIBLE HEATSINKING ON COMMON OR SEPARATE HEATSINK. MATCHED DIODES FOR TYPICAL PFC APPLICATION WITHOUT NEED FOR VOLTAGE BALANCE NETWORK Package Capacitance: C=7pF s s s s s s Insulated TO-220AB DESCRIPTION The TURBOSWITCH "H" is an ultra high performance diode composed of two 300V dice in series. TURBOSWITCH "H" family drastically cuts losses in the associated MOSFET when run at high dIF/dt. ABSOLUTE RATINGS (limiting values, for both diodes) Symbol VRRM IF(RMS) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms sinusoidal Value 600 14 60 -65 +150 + 150 Unit V A A C C TM: TURBOSWITCH is a trademark of STMicroelectronics June 2003 - Ed: 1A 1/5 STTH506TTI THERMAL AND POWER DATA Symbol Rth (j-c) P Parameter Junction to case thermal resistance Conduction power dissipation for both diodes Test conditions Total IF(AV) = 5 A = 0.5 Tc = 100C Value 3.0 17 Unit C/W W STATIC ELECTRICAL CHARACTERISTICS (for both diodes) Symbol IR * Parameter Reverse leakage current Tests Conditions VR = VRRM Tj = 25C Tj = 125C VF ** Forward voltage drop IF = 5 A Tj = 25C Tj = 125C Pulse test : * tp = 100 ms, < 2 % ** tp = 380 s, < 2% To evaluate the maximum conduction losses use the following equation : P = 1.8 x IF(AV) + 0.16 IF2(RMS) DYNAMIC CHARACTERISTICS (for both diodes) Symbol trr Parameter Reverse recovery time IF = 0.5 A IR = 1 A Tests Conditions Irr = 0.25 A Tj = 25C Min. Typ. 12 25 Tj = 125C 3.8 0.4 4.5 A Max. Unit ns 2.1 8 Min. Typ. Max. 6 60 3.6 2.6 V Unit A IF = 1 A dIF/dt = - 50 A/s VR = 30 V IRM S Reverse recovery current Reverse recovery softness factor VR = 400 V IF = 5 A dIF/dt = -200 A/s TURN-ON SWITCHING CHARACTERISTICS (for both diodes) Symbol tfr VFP Parameter Forward recovery time Transient peak forward recovery voltage Tests Conditions IF = 5 A dIF/dt = 100 A/s VFR = 1.1 x VF max IF = 5 A dIF/dt = 100 A/s Tj = 25C Tj = 25C Min. Typ. Max. 100 7 Unit ns V 2/5 STTH506TTI Fig. 1: Conduction losses versus average current. Fig. 2: Forward voltage drop versus forward current. IFM(A) = 0.1 = 0.2 = 0.5 = 0.05 =1 100 90 80 70 60 50 40 30 Tj=125C (maximum values) P(W) 20 18 16 14 12 10 8 6 Tj=125C (typical values) Tj=25C (maximum values) T 4 2 0 0 1 2 3 4 5 20 10 IF(AV)(A) =tp/T 6 tp 0 7 0 1 2 3 4 VFM(V) 5 6 7 8 Fig. 3: Relative variation of thermal impedance junction to case versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 = 0.5 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 9 8 7 6 5 4 IF=0.5 x IF(AV) VR=400V Tj=125C IF=2 x IF(AV) IF=IF(AV) IF=0.25 x IF(AV) 0.4 0.3 0.2 = 0.2 = 0.1 3 T 2 1 0 Single pulse 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 1.E+00 dIF/dt(A/s) 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 45 40 35 30 25 IF=2 x IF(AV) IF=IF(AV) IF=0.5 x IF(AV) VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 100 90 80 70 60 IF=0.5 x IF(AV) IF=IF(AV) VR=400V Tj=125C IF=2 x IF(AV) 50 20 40 15 10 5 30 20 dIF/dt(A/s) 0 0 50 100 150 200 250 300 350 400 450 500 10 0 0 50 100 150 dIF/dt(A/s) 200 250 300 350 400 450 500 3/5 STTH506TTI Fig. 7: Reverse recovery softness factor versus dIF/dt (typical values). S 0.60 IF=IF(AV) VR=400V Tj=125C Fig. 8: Relative variation of dynamic parameters versus junction temperature (reference: Tj = 125C). 2.50 2.25 2.00 1.75 1.50 S IF=IF(AV) VR=400V Reference: Tj=125C 0.50 0.40 1.25 1.00 0.75 IRM 0.30 0.50 0.25 dIF/dt(A/s) 0.20 0 50 100 150 200 250 300 350 400 450 500 Tj(C) 25 50 75 100 125 0.00 Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 20 18 16 14 12 10 8 6 4 2 0 0 50 100 150 200 250 300 350 400 450 500 IF=IF(AV) Tj=125C Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 200 180 160 140 120 100 80 60 40 IF=IF(AV) VFR=1.1 x VF max. Tj=125C dIF/dt(A/s) 20 0 0 100 dIF/dt(A/s) 200 300 400 500 Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz VOSC=30mVRMS Tj=25C 10 VR(V) 1 1 10 100 1000 4/5 STTH506TTI PACKAGE MECHANICAL DATA TO-220AB B C b2 DIMENSIONS REF. Millimeters Inches Min. Typ. Max. Min. Typ. Max. 15.20 15.90 0.598 0.625 3.50 4.20 0.137 0.165 13.00 14.00 0.511 0.551 10.00 10.40 0.393 0.409 0.61 0.88 0.024 0.034 1.23 1.32 0.048 0.051 4.40 4.60 0.173 0.181 0.49 0.70 0.019 0.027 2.40 2.72 0.094 0.107 2.40 2.70 0.094 0.106 6.20 6.60 0.244 0.259 3.75 3.85 0.147 0.151 16.40 0.646 2.65 2.95 0.104 0.116 1.14 1.70 0.044 0.066 1.14 1.70 0.044 0.066 2.60 0.102 L F I A l4 a1 c2 l3 l2 a2 b1 e M c1 A a1 a2 B b1 b2 C c1 c2 e F I I4 L l2 l3 M Ordering code STTH506TTI s Marking STTH506TTI Package TO-220AB Weight 2.3 g. Base qty 50 Delivery mode Tube s s s Cooling method: C Recommended torque value: 0.8 N.m. Maximum torque value: 1 N.m. Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 5/5 |
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