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STGB20NB41LZ
N-CHANNEL CLAMPED 40A - DPAK INTERNALLY CLAMPED PowerMESHTM IGBT
TYPE STGB20NB41LZ
s s s s s s s
VCES CLAMPED
VCE(sat) < 2.0 V
IC 20 A
POLYSILICON GATE VOLTAGE DRIVEN LOW THRESHOLD VOLTAGE LOW ON-VOLTAGE DROP LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH VOLTAGE CLAMPING FEATURE SURFACE-MOUNTING DPAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX "T4")
3 1
DPAK
DESCRIPTION INTERNAL SCHEMATIC DIAGRAM Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The built in collector-gate zener exhibits a very precise active clamping while the gate-emitter zener supplies an ESD protection. APPLICATIONS s AUTOMOTIVE IGNITION
ABSOLUTE MAXIMUM RATINGS
Symbol VCES VECR VGE IC IC ICM ( ) Eas PTOT ESD Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25C Collector Current (continuos) at TC = 100C Collector Current (pulsed) Single Pulse Energy Tc = 25C Total Dissipation at TC = 25C Derating Factor ESD (Human Body Model) Storage Temperature Operating Junction Temperature Value CLAMPED 20 CLAMPED 40 20 80 700 200 1.33 8 - 55 to 175 Unit V V V A A A
mJ
W W/C KV C
(*)Pulse width limited by safe operating area
March 2003
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STGB20NB41LZ
THERMAL DATA
Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 0.75 62.5 C/W C/W
ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF
Symbol BV(CES) BV(ECR) BVGE ICES IGES RGE Parameter Clamped Voltage Emitter Collector Break-down Voltage Gate Emitter Break-down Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Emitter Resistance Test Conditions IC = 2 mA, VGE = 0, Tc= - 40C / 150 C IC = 75 mA, Tc = 25C IG = 2 mA VCE = 15 V, VGE =0 ,TC =150 C VCE =200 V, VGE=0 ,TC =150C VGE = 10V , VCE = 0 300 10 660 15 Min. 382 20 12 Typ. 412 28 14 16 10 100 1000 30 Max. 442 Unit V V V A A A K
ON (1)
Symbol VGE(th) VCE(SAT) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250A, Tc=25C VGE =4.5V, IC = 10 A, Tc= 25C VGE =4.5V, IC = 20 A, Tc= 25C Min. 1 1.1 1.3 Typ. Max. 2.4 1.8 2.0 Unit V V V
DYNAMIC
Symbol gfs Cies Coes Cres Qg Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Charge VCE = 320V, IC = 20 A, VGE = 5V Test Conditions VCE = 25 V , IC =20 A VCE = 25V, f = 1 MHz, VGE = 0 Min. Typ. 35 2300 160 25 46 Max. Unit S pF pF pF nC
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STGB20NB41LZ
FUNCTIONAL CHARACTERISTICS
Symbol II U.I.S. Parameter Latching Current Functional Test Open Secondary Coil Test Conditions VClamp = 320 V, TC = 125 C RGOFF = 1K , VGE = 10 V RGOFF =1K , L = 1.6mH, Tc=125C 20 Min. Typ. 40 Max. Unit A A
SWITCHING ON
Symbol td(on) tr (di/dt)on Eon Parameter Turn-on Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 320 V, IC = 20 A RG = 1K , VGE = 5 V VCC= 320 V, IC = 20 A RG=1K, VGE = 5 V VCC= 320 V, IC = 20 A, Tc=25C RG=1K, VGE = 5 V, Tc=150C Min. Typ. 1 0.22 140 5 5.1 Max. Unit s s A/s mJ mJ
SWITCHING OFF
Symbol tc tr(Voff) td(off) tf Eoff(**) tc tr(Voff) td(off) tf Eoff(**) Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Vcc = 320 V, IC = 20 A, RGE = 1 K , VGE = 5 V Tj = 125 C Test Conditions Vcc = 320 V, IC = 20 A, RGE = 1K , VGE = 5 V Min. Typ. 4.4 2.5 12.1 1.6 12.9 6 3.16 13.4 2.7 18.4 Max. Unit s s s s mJ s s s s mJ
(q)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (1)Pulse width limited by max. junction temperature. (**)Losses Include Also the Tail
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STGB20NB41LZ
Output Characteristics Transfer Characteristics
Normalized Gate Threshold Voltage vs Temp.
Transconductance
Normalized Collector-Emitter On Voltage vs Temperature
Normalized Collector-Emitter On Voltage vs Gate-Emitter Voltage
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STGB20NB41LZ
Capacitance Variations Gate Charge vs Gate-Emitter Voltage
Off Losses vs Gate Resistance
Off Losses vs Collector Current
Normalized Break-down Voltage vs Temp.
Normalized BVGE vs Temperature
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STGB20NB41LZ
Off Losses vs Temperature Switching Off Safe Operating Area
Thermal Impedance
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STGB20NB41LZ
D2PAK MECHANICAL DATA
mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 8 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch
3
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1
STGB20NB41LZ
D2PAK FOOTPRINT
TUBE SHIPMENT (no suffix)*
TAPE AND REEL SHIPMENT (suffix "T4")*
REEL MECHANICAL DATA
DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992
TAPE MECHANICAL DATA
DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W
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BASE QTY 1000
mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1
inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574
0.35 0.0098 0.0137 0.933 0.956
* on sales type
STGB20NB41LZ
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com
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