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| P-CHANNEL 30V - 0.027 - 6A SO-8 STripFETTM POWER MOSFET TYPE STS6PF30L s s STS6PF30L VDSS 30 V RDS(on) <0.030 ID 6A s TYPICAL RDS(on) = 0.027 STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE DESCRIPTION This Power MOSFET is the latest development of STMicroelectronis unique "Single Feature SizeTM" strip-based process. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility. APPLICATIONS s MOBILE PHONE APPLICATIONS s DC-DC CONVERTERS s BATTERY MANAGEMENT IN NOMADIC EQUIPMENT SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID ID IDM(*) Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 k) Gate- source Voltage Drain Current (continuous) at TC = 25C Drain Current (continuous) at TC = 100C Drain Current (pulsed) Information furnished is believed to be accurate and reliable. However, STMicroel of use of such information nor for any infringement of patents or other rights of third by implication or otherwise under any patent or patent rights of STMicroelectronic Value Unit to change without notice. This publication supersedes and replaces all information 30 components in life support devices or systems withou V authorized for use as critical 30 16 6 3.8 24 V The ST logo is registered trademark of ST V (R) 2003 STMicroelectronics - All Righ A All other names are the property of their re A Total Dissipation at TC = 25C Ptot (*) Pulse width limited by safe operating area. May 2003 . STMicroelectronics GROUP OF CO 2.5 W Australia - Brazil - China - Finland - France - Germany - Hong Kong - In Singapore actual Sweden of Note: For the P-CHANNEL MOSFET - Spain -polarity - Switzerland - Un voltages and current has to be reversed http://www.st.com A 1/8 STS6PF30L THERMAL DATA Rthj-amb Tj Tstg Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose storage temperature Max Typ 50 150 -55 to 150 C/W C C ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 A, VGS = 0 VDS = Max Rating VDS = Max Rating TC = 125C VGS = 16 V Min. 30 1 10 100 Typ. Max. Unit V A A nA IGSS ON (*) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10 V VGS = 5 V ID = 250 A ID = 3 A ID = 3 A Min. 1 Typ. 1.6 0.027 0.034 Max. 2.5 0.030 0.042 Unit V DYNAMIC Symbol gfs (*) Ciss Coss Crss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions VDS=10 V ID=3 A Min. Typ. 12 1670 345 120 Max. Unit S pF pF pF VDS = 25V, f = 1 MHz, VGS = 0 2/8 STS6PF30L ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON (*) Symbol td(on) tr Qg Qgs Qgd Parameter Turn-on Delay Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions ID = 3 A VDD = 15 V RG = 4.7 VGS = 5 V (Resistive Load, Figure 1) VDD= 24V ID= 6A VGS=5V (see test circuit, Figure 2) Min. Typ. 62 140 21 3.9 8.6 28 Max. Unit ns ns nC nC nC SWITCHING OFF(*) Symbol td(off) tf Parameter Turn-off Delay Time Fall Time Test Conditions ID = 3 A VDD = 24 V RG = 4.7, VGS = 5 V (Resistive Load, Figure 1) Min. Typ. 57 19 Max. Unit ns ns SOURCE DRAIN DIODE(*) Symbol ISD ISDM (*) VSD (*) trr Qrr IRRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 6 A VGS = 0 37 46.3 2.5 Test Conditions Min. Typ. Max. 6 4 1.2 Unit A A V ns nC A di/dt = 100A/s ISD = 6 A VDD = 15 V Tj = 150C (see test circuit, Figure 3) (*)Pulse width [ 300 s, duty cycle 1.5 %. (*)Pulse width limited by TJMAX Safe Operating Area Thermal Impedance 3/8 STS6PF30L Output Characteristics Transfer Characteristics Transconductance Static Drain-source On Resistance Gate Charge vs Gate-source Voltage Capacitance Variations 4/8 STS6PF30L Normalized Gate Threshold Voltage vs Temperature Normalized on Resistance vs Temperature Source-drain Diode Forward Characteristics Normalized Breakdown Voltage vs Temperature . . 5/8 STS6PF30L Fig. 1: Switching Times Test Circuits For Resistive Load Fig. 2: Gate Charge test Circuit Fig. 3: Test Circuit For Diode Recovery Behaviour 6/8 STS6PF30L SO-8 MECHANICAL DATA DIM. MIN. A a1 a2 a3 b b1 C c1 D E e e3 F L M S 3.8 0.4 4.8 5.8 1.27 3.81 4.0 1.27 0.6 8 (max.) 0.14 0.015 5.0 6.2 0.65 0.35 0.19 0.25 0.1 mm TYP. MAX. 1.75 0.25 1.65 0.85 0.48 0.25 0.5 45 (typ.) 0.188 0.228 0.050 0.150 0.157 0.050 0.023 0.196 0.244 0.025 0.013 0.007 0.010 0.003 MIN. inch TYP. MAX. 0.068 0.009 0.064 0.033 0.018 0.010 0.019 0016023 7/8 STS6PF30L Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2003 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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