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DG444/445 Vishay Siliconix Quad SPST CMOS Analog Switches FEATURES D D D D D D D Low On-Resistance: 50 W Low Leakage: 80 pA Low Power Consumption: 22 nW Fast Switching Action--tON: 120 ns Low Charge Injection DG211/DG212 Upgrades TTL/CMOS Logic Compatible BENEFITS D Low Signal Errors and Distortion D Reduced Power Supply Requirements D Faster Throughput D Improved Reliability D Reduced Pedestal Errors D Simple Interfacing APPLICATIONS D D D D D D D D Audio Switching Battery Powered Systems Data Acquisition Sample-and-Hold Circuits Telecommunication Systems Automatic Test Equipment Single Supply Circuits Hard Disk Drives DESCRIPTION The DG444/DG445 monolithic quad analog switches are designed to provide high speed, low error switching of analog signals. The DG444 has a normally closed function. The DG445 has a normally open function. Combining low power (22 nW, typ) with high speed (tON: 120 ns, typ), the DG444/DG445 are ideally suited for upgrading DG211/212 sockets. Charge injection has been minimized on the drain for use in sample-and-hold circuits. To achieve high-voltage ratings and superior switching performance, the DG444/DG445 are built on Vishay Siliconix's high-voltage silicon-gate process. An epitaxial layer prevents latchup. Each switch conducts equally well in both directions when on, and blocks input voltages to the supply levels when off. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 16 15 14 13 IN2 TRUTH TABLE Logic DG444 ON OFF Logic "0" v 0.8 V Logic "1" w 2.4 V DG445 OFF ON D2 S2 V+ VL 0 1 DG444 5 6 7 8 12 11 10 9 ORDERING INFORMATION S3 D3 -40_C to 85_C 40_C IN3 DG444DY 16-Pin Narrow SOIC DG445DY Top View Temp Range Package 16-Pin Plastic DIP Part Number DG444DJ DG445DJ Document Number: 70054 S-52433--Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-1 DG444/445 Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V VL . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (GND -0.3 V) to (V+) + 0.3 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 30 mA, whichever occurs first Continuous Current (Any Terminal) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Current, S or D (Pulsed 1 ms, 10% duty cycle) . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450 mW 16-Pin Narrow Body SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 640 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6 mW/_C above 75_C d. Derate 8 mW/_C above 75_C SPECIFICATIONS FOR DUAL SUPPLIES Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) IS = -10 mA, VD = "8.5 V V+ = 13.5 V, V- = -13.5 V V+ = 16.5, V- = -16.5 V , VD = "15.5 V VS = #15.5 V 15 5 V, 15 5 V+ = 16.5 V, V- = -16.5 V VS = VD = "15.5 V Full Room Full Room Full Room Full Room Full -0.5 -5 -0.5 -5 -0.5 -10 -15 50 "0.01 "0.01 "0.08 15 85 100 0.5 5 0.5 5 0.5 10 nA A V W D Suffix -40 to 85_C Symbol V+ = 15 V, V- = -15 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit Digital Control Input Current VIN Low Input Current VIN High IIL IIH VIN under test = 0.8 V All Other = 2.4 V VIN under test = 2.4 V All Other = 0.8 V Full Full -500 -500 -0.01 0.01 500 nA 500 Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injectione Off Isolatione Crosstalk (Channel-to-Channel)d Source Off Capacitance Drain Off Capacitance Channel On Capacitance tON tOFF Q OIRR XTALK CS(off) CD(off) CD(on) RL = 1 kW , CL = 35 pF VS = "10 V, See Figure 2 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W RL = 50 W, CL = 5 pF, f = 1 MHz W, f = 1 MHz VANALOG = 0 V DG444 DG445 Room Room Room Room Room Room Room Room Room 120 110 160 -1 60 100 4 4 16 pF F 250 140 210 pC dB ns Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND Room Full V+ 16 5 V, V V = 16.5 V, V- = -16.5 V 16 5 VIN = 0 or 5 V Room Full Room Full Room Full -1 -5 -1 -5 0.001 -0.0001 1 5 mA A 1 5 0.001 -0.001 www.vishay.com S FaxBack 408-970-5600 4-2 Document Number: 70054 S-52433--Rev. F, 06-Sep-99 DG444/445 Vishay Siliconix SPECIFICATIONS FOR UNIPOLAR SUPPLIES Test Conditions Unless Otherwise Specified Parameter Analog Switch Analog Signal Ranged Drain-Source On-Resistanced VANALOG rDS(on) IS = -10 mA, VD = 3 V, 8 V V+ = 10.8 V, VL = 5.25 V Full Room Full 0 100 12 160 200 V W D Suffix -40 to 85_C Symbol V+ = 12 V, V- = 0 V VL = 5 V, VIN = 2.4 V, 0.8 Ve Tempa Minb Typc Maxb Unit Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection tON tOFF Q RL = 1 kW , CL = 35 p , VS = 8 V pF, See Figure 2 S Fi CL = 1 nF, Vgen = 6 V, Rgen = 0 W Room Room Room 300 60 2 450 ns 200 pC Power Supplies Positive Supply Current Negative Supply Current Logic Supply Current Ground Current I+ I- IL IGND V+ = 13.2 V, VIN = 0 or 5 V VIN = 0 or 5 V VL = 5.25 V, VIN = 0 or 5 V VIN = 0 or 5 V Room Full Room Full Room Full Room Full -1 -5 -1 -5 0.001 -0.0001 0.001 -0.001 1 5 mA A 1 5 Notes: a. Room = 25_C, Full = as determined by the operating temperature suffix. b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. Guaranteed by design, not subject to production test. e. VIN = input voltage to perform proper function. Document Number: 70054 S-52433--Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-3 DG444/445 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 80 r DS(on) Drain-Source On-Resistance ( W ) - 70 60 -100 50 40 30 20 10 0 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) 0_C -40_C -40 -20 0 100 1k 10 k 100 k 1M 10 M V+ = 15 V V- = -15 V Ref. 10 dBm 85_C 25_C (dB) -80 -60 Off Isolation rDS(on) vs. VD and Temnperature V+ = 15 V V- = -15 V Crosstak and Off Isolation vs. Frequency -140 -120 Crosstalk f - Frequency (Hz) Charge Injection vs. Source Voltage 50 40 30 20 Q (pC) 10 0 -10 -20 -30 -10 -5 0 VS - Source Voltage (V) 5 10 0 0 V+ = 12 V V- = 0 V 3 V TH (V) V+ = 15 V V- = -15 V CL = 1 nF 4 Switching Threshold vs. Supply Voltage 2 VL = 7 V 1 VL = 5 V 4 8 12 16 20 VSUPPLY (V) Source/Drain Leakage Currents 20 IS(off) , ID(off) 0 0 10 Source/Drain Leakage Currents (Single 12-V Supply) IS(off), ID(off) -20 I S, I D (pA) ID(on) -40 I S, I D (pA) -10 IS(on) + ID(on) -20 V+ = 12 V V- = 0 V For ID, VS = 0 V For IS, VD = 0 V -60 V+ = 15 V V- = -15 V For I(off), VD = -VS -30 -80 -100 -15 -10 -5 0 5 10 15 -40 0 2 4 6 8 10 12 VD or VS - Drain or Source Voltage (V) VD or VS - Drain or Source Voltage (V) www.vishay.com S FaxBack 408-970-5600 4-4 Document Number: 70054 S-52433--Rev. F, 06-Sep-99 DG444/445 Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Switching Time vs. Power Supply Voltage 160 140 400 120 tON DG444 tOFF 300 t (ns) tON 200 tON DG445 500 V- = 0 V VL = 5 V Switching Times vs. Power Supply Voltage t (ns) 100 80 60 40 20 "10 "12 "14 "16 "18 "20 "22 "VSUPPLY (V) DG444 DG445 tON tOFF 100 tOFF tOFF 0 8 10 12 14 16 18 20 22 V+ - Positive Supply (V) 100 mA 10 mA 1 mA I L , I-, I+, I GND 100 nA 10 nA Supply Current vs. Temperature 25 Source/Drain Capacitance vs. Analog Voltage V+ = 15 V V- = -15 V CS(on) + CD(on) C S, D (pF) 15 20 I+, IGND -(I-) 1 nA 100 pA 10 5 10 pA 1 pA -55 -25 0 25 50 75 100 125 IL 0 -15 -10 -5 0 5 10 15 Temperature (_C) VANALOG - Analog Voltage (V) CS(off), CD(off) Switching Time vs. Input Voltage 160 140 120 100 tON 80 60 40 20 2 3 Input Voltage (V) 4 5 DG444 DG445 tOFF V+ = 15 V V- = -15 V tON t (ns) Document Number: 70054 S-52433--Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-5 DG444/445 Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ S VL V- VIN Level Shift/ Drive V+ GND D V- FIGURE 1. TEST CIRCUITS +5 V +15 V Logic Input VL "10 V S IN 3V GND V- Switch Output 0V tON Logic input waveform is inverted for DG445. V+ D RL 1 kW CL 35 pF 0V VO Switch Input VS VO 80% 80% tOFF 3V 50% 50% tr <20 ns tf <20 ns -15 V CL (includes fixture and stray capacitance) Note: FIGURE 2. Switching Time +5 V +15 V DVO VO Rg VL S IN V+ D CL 1 nF V- VO INX OFF (DG444) ON OFF Vg 3V GND -15 V INX (DG445) OFF ON Q = DVO x CL OFF FIGURE 3. Charge Injection www.vishay.com S FaxBack 408-970-5600 4-6 Document Number: 70054 S-52433--Rev. F, 06-Sep-99 DG444/445 Vishay Siliconix TEST CIRCUITS C = 1 mF tantalum in parallel with 0.01 mF ceramic +5 V +15 V C +5 V VL VS Rg = 50 W IN1 0V, 2.4 V S2 NC IN2 GND V- C -15 V -15 V Off Isolation = 20 log XTALK Isolation = 20 log C = RF bypass VS VO VS VO RL D2 VO 0V, 2.4 V S1 V+ D1 VL 50 W VS Rg = 50 W IN GND V- RL S V+ D VO +15 V C 0V, 2.4 V C FIGURE 4. Crosstalk +5 V +15 V C FIGURE 5. Off Isolation VL V+ S Meter IN 0 V, 2.4 V D GND V- C HP4192A Impedance Analyzer or Equivalent f = 1 MHz -15 V FIGURE 6. Source/Drain Capacitances APPLICATIONS +5 V +15 V +15 V VL 1/ 4 V+ DG444 +15 V VOUT 10 kW +5 V VIN GND V- 0V 0V FIGURE 7. Level Shifter Document Number: 70054 S-52433--Rev. F, 06-Sep-99 www.vishay.com S FaxBack 408-970-5600 4-7 DG444/445 Vishay Siliconix APPLICATIONS VIN +5V VL + - +15 V V+ VOUT Gain error is determined only by the resistor tolerance. Op amp offset and CMRR will limit accuracy of circuit. GAIN1 AV = 1 R1 90 kW With SW4 Closed: VOUT VIN = R1 + R2 + R3 + R4 R4 = 100 GAIN2 AV = 10 R2 5 kW GAIN3 AV = 20 GAIN4 AV = 100 R3 4 kW R4 1 kW DG444 or DG445 V- GND -15 V FIGURE 8. Precision-Weighted Resistor Programmable-Gain Amplifier +5 V V1 +15 V Logic Input Low = Sample High = Hold DG444 +15 V -15 V - VIN + 5 MW 5.1 MW 30 pF -15 V C1 50 pF V2 J202 R1 200 kW J500 +15 V 2N4400 VOUT J507 GND C2 1000 pF FIGURE 9. Precision Sample-and-Hold www.vishay.com S FaxBack 408-970-5600 4-8 Document Number: 70054 S-52433--Rev. F, 06-Sep-99 |
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