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| STGW30NB60HD N-CHANNEL 30A - 600V - TO-247 PowerMESHTM IGBT TYPE STGW30NB60HD s s s s s s s VCES 600 V VCE(sat) (Max) < 2.8 V IC 30 A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (VCESAT) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TORBOSWITCHTM ANTIPARALLEL DIODE 3 2 1 TO-247 DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120KHz). APPLICATIONS s HIGH FREQUENCY MOTOR CONTROLS s WELDING EQUIPMENTS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol VCES VECR VGE IC IC ICM ( ) PTOT Tstg Tj March 2003 Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C Collector Current (continuous) at TC = 100C Collector Current (pulsed) Total Dissipation at TC = 25C Derating Factor Storage Temperature Max. Operating Junction Temperature Value 600 20 20 60 30 240 190 1.52 -65 to 150 150 Unit V V V A A A W W/C C C 1/8 Note:NEW DATASHEET ACCORDING TO PCN DSG/CT/XXXX (q ) Pulse width limited by safe operating area STGW30NB60HD THERMAL DATA Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 0.66 30 0.1 C/W C/W C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collectro-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 A, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20 V , VCE = 0 Min. 600 100 1000 100 Typ. Max. Unit V A A nA ON (*) Symbol VGE(th) VCE(sat) Parameter Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions VCE = VGE, IC = 250 A VGE=15 V, IC=30 A VGE=15 V, IC=30 A , TC=125C Min. 3 2.2 1.8 Typ. Max. 5 2.8 Unit V V V DYNAMIC Symbol gfs Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Latching Current VCE = 480 V, IC = 30 A, VGE = 15 V Vclamp = 480 V , RG =10 VGE =15 V , Tj = 150C 120 Test Conditions VCE = 25 V , IC = 30 A VCE = 25 V, f = 1 MHz, VGE = 0 Min. Typ. 20 2300 250 72 150 15 72 210 Max. Unit S pF pF pF nC nC nC A SWITCHING ON Symbol td(on) tr (di/dt)on Eon Parameter Delay Time Rise Time Turn-on Current Slope Turn-on Switching Losses Test Conditions VCC = 480 V, IC = 30 A VGE = 15 V , RG = 10 VCC= 480 V, IC = 30 A, RG=10 VGE = 15 V, Tj = 125C Min. Typ. 15 35 1000 1000 Max. Unit ns ns A/s J 2/8 STGW30NB60HD ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING OFF Symbol tc tr(Voff) td(off) tf Eoff(**) Ets tc tr(Voff) td(off) tf Eoff(**) Ets Parameter Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Cross-over Time Off Voltage Rise Time Delay Time Fall Time Turn-off Switching Loss Total Switching Loss Vcc = 480 V, IC = 30 A, RGE = 10 , VGE = 15 V Tj = 125 C Test Conditions Vcc = 480 V, IC = 30 A, RGE = 10 , VGE = 15 V Min. Typ. 150 40 210 90 1.10 2.0 250 70 250 160 1.6 2.65 Max. Unit ns ns ns ns mJ mJ ns ns ns ns mJ mJ Note: (*)Pulsed: Pulse duration = 300 s, duty cycle 1.5 %. (**)Losses include Also the Tail (Jedec Standardization) COLLECTOR-EMITTER DIODE Symbol If Ifm Vf trr Qrr Irrm Parameter Forward Current Forward Current pulsed Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current If = 15 A If = 15 A, Tj = 125 C If = 15 A ,VR = 27 V, Tj =125C, di/dt = 100A/s 1.4 1.25 84 201 4.8 Test Conditions Min. Typ. Max. 15 120 2.0 Unit A A V V ns nC A Thermal Impedance 3/8 STGW30NB60HD Output Characteristics Transfer Characteristics Transconductance Collector-Emitter On Voltage vs Temperature Collector-Emitter On Voltage vs Collettor Current Gate Threshold vs Temperature 4/8 STGW30NB60HD Normalized Breakdown Voltage vs Temperature Capacitance Variations Gate Charge vs Gate-Emitter Voltage Total Switching Losses vs Gate Resistance Total Switching Losses vs Temperature Total Switching Losses vs Collector Current 5/8 STGW30NB60HD Switching Off Safe Operating Area Diode Forward Voltage Fig. 1: Gate Charge test Circuit Fig. 2: Test Circuit For Inductive Load Switching 6/8 STGW30NB60HD TO-247 MECHANICAL DATA mm. MIN. 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 3.65 5.50 0.140 0.177 0.216 14.80 4.30 0.560 0.14 0.728 0.143 0.216 TYP MAX. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 MIN. 0.19 0.086 0.039 0.086 0.118 0.015 0.781 0.608 0.214 0.582 0.17 inch TYP. MAX. 0.20 0.102 0.055 0.094 0.134 0.03 0.793 0.620 DIM. A A1 b b1 b2 c D E e L L1 L2 oP oR S 7/8 STGW30NB60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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