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(R)
STD7NS20
N - CHANNEL 200V - 0.35 - 7A - DPAK MESH OVERLAYTM MOSFET
PRELIMINARY DATA
TYPE STD7NS20
s s s s s s
V DSS 200 V
R DS(on) < 0.40
ID 7A
TYPICAL RDS(on) = 0.35 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED FOR TAPE & REEL AND OTHER PACKAGING OPTIONS CONTACT SALES OFFICES
3 1
DESCRIPTION This power MOSFET is designed using the company's consolidated strip layout-based MESH OVERLAYTM process. This technology matches and improves the performances compared with standard parts from various sources. APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
DPAK TO-252 (Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V DS V DGR V GS ID ID I DM (*) P tot dv/dt(1) Tstg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k) Gate-source Voltage Drain Current (continuous) at T c = 25 o C Drain Current (continuous) at T c = 100 C Drain Current (pulsed) Total Dissipation at T c = 25 o C Derating Factor Peak Diode Recovery voltage slope Storage Temperature Max. Operating Junction Temperature
o
Value 200 200 20 7 4.4 28 45 0.37 5 -65 to 150 150
Unit V V V A A A W W/ o C V/ns
o o
C C
(*) Pulse width limited by safe operating area (1) ISD 7A, di/dt 300 A/s, VDD V(BR)DSS, Tj TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet
November 1998
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STD7NS20
THERMAL DATA
R thj-case
Rthj-amb
R thc-sink Tl
Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose
2.7 100 1.5 275
C/W oC/W o C/W o C
o
AVALANCHE CHARACTERISTICS
Symbol IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by T j max) Single Pulse Avalanche Energy (starting T j = 25 o C, I D = I AR , V DD = 50 V) Max Value 7 60 Unit A mJ
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) OFF
Symbol V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Conditions I D = 250 A V GS = 0 Min. 200 1 10 100 Typ. Max. Unit V A A nA
Zero Gate Voltage V DS = Max Rating Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (V DS = 0) V GS = 20 V
T c = 125 o C
ON ()
Symbol V GS(th) R DS(on) I D(on) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance V GS = 10V Test Conditions I D = 250 A I D =3.5 A 7 Min. 2 Typ. 3 0.35 Max. 4 0.40 Unit V A
On State Drain Current V DS > I D(on) x R DS(on)max V GS = 10 V
DYNAMIC
Symbol g fs () C iss C oss C rss Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Test Conditions V DS > I D(on) x R DS(on)max V DS = 25 V f = 1 MHz I D = 3.5 A V GS = 0 Min. 3 Typ. 4 540 90 35 700 120 50 Max. Unit S pF pF pF
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STD7NS20
ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON
Symbol t d(on) tr Qg Q gs Q gd Parameter Turn-on Time Rise Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Test Conditions V DD = 100 V I D = 3.5 A V GS = 10 V R G = 4.7 (see test circuit, figure 3) V DD = 160 V V ID = 18 A V GS = 10 Min. Typ. 10 15 31 7.5 9 Max. 14 20 45 Unit ns ns nC nC nC
SWITCHING OFF
Symbol tr(Voff) tf tc Parameter Off-voltage Rise Time Fall Time Cross-over Time Test Conditions V DD = 160 V I D = 7 A R G = 4.7 VGS = 10 V (see test circuit, figure 5) Min. Typ. 12 12 25 Max. 17 17 35 Unit ns ns ns
SOURCE DRAIN DIODE
Symbol ISD I SDM (*) V SD () t rr Q rr I RRM Parameter Source-drain Current Source-drain Current (pulsed) Forward On Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current I SD = 7 A V GS = 0 170 0.95 11 I SD = 7 A di/dt = 100 A/s V DD = 50 V T j = 150 o C (see test circuit, figure 5) Test Conditions Min. Typ. Max. 7 28 1.5 Unit A A V ns C A
() Pulsed: Pulse duration = 300 s, duty cycle 1.5 % (*) Pulse width limited by safe operating area
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STD7NS20
TO-252 (DPAK) MECHANICAL DATA
mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 0.6 2.2 0.9 0.03 0.64 5.2 0.45 0.48 6 6.4 4.4 9.35 0.8 1 0.023 TYP. MAX. 2.4 1.1 0.23 0.9 5.4 0.6 0.6 6.2 6.6 4.6 10.1 MIN. 0.086 0.035 0.001 0.025 0.204 0.017 0.019 0.236 0.252 0.173 0.368 0.031 0.039 inch TYP. MAX. 0.094 0.043 0.009 0.035 0.212 0.023 0.023 0.244 0.260 0.181 0.397
DIM.
H
A
C2
C
DETAIL "A"
A1
L2
D DETAIL "A"
B
=
=
3
B2
=
=
G
E
2
L4
1
=
=
A2
0068772-B
4/5
STD7NS20
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics (c) 1998 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Mexico - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. http://www.st.com .
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