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BUH615D
HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
s s s
s
SGS-THOMSON PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N))
3 2 1
s
APPLICATIONS: HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH615D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds. The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol V CBO V CEO V EBO IC I CM IB I BM P tot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current (t p < 5 ms) Base Current Base Peak Current (t p < 5 ms) Total Dissipation at T c = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 700 5 8 12 5 8 55 -65 to 150 150 Unit V V V A A A A W
o o
C C 1/4
December 1997
BUH615D
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 2.3
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CES I EBO V CE(sat) V BE(sat) h FE ts tf ts tf Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage DC Current Gain RESISTIVE LOAD Storage Time Fall Time INDUCTIVE LOAD Storage Time Fall Time Test Conditions V CE = 1500 V V CE = 1500 V V EB = 5 V IC = 6 A IC = 6 A IC = 6 A I B = 2.5 A I B = 2.5 A V CE = 5 V IC = 6 A I B2 = -3 A 4 2.7 190 2.3 350 Tj = 125 C
o
Min.
Typ.
Max. 0.2 2 300 1.5 1.3 9 3.9 280
Unit mA mA mA V V
V CC = 400 V I B1 = 1.5 A IC = 6 A I B1 = 1.25 A V ceflyback
s ns s ns
f = 15625 Hz I B2 = -3 A = 1050 sin 106 t 10
V
ts tf
INDUCTIVE LOAD Storage Time Fall Time
IC = 6 A I B1 = 1.5 A V ceflyback IF = 5 A
f = 31250 Hz I B2 = -3 A = 1200 sin 106 t V 5
2.3 200
s ns
Vf
Diode Forward Voltage
2
V
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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BUH615D
ISOWATT218 MECHANICAL DATA
DIM. MIN. A C D D1 E F G H L1 L2 L3 L4 L5 L6 M N U 5.35 3.3 2.9 1.88 0.75 1.05 10.8 15.8 20.8 19.1 22.8 40.5 4.85 20.25 3.5 2.1 4.6 mm TYP. MAX. 5.65 3.8 3.1 2.08 1 1.25 11.2 16.2 21.2 19.9 23.6 42.5 5.25 20.75 3.7 2.3 MIN. 0.210 0.130 0.114 0.074 0.029 0.041 0.425 0.622 0.818 0.752 0.897 1.594 0.190 0.797 0.137 0.082 0.181 inch TYP. MAX. 0.222 0.149 0.122 0.081 0.039 0.049 0.441 0.637 0.834 0.783 0.929 1.673 0.206 0.817 0.145 0.090
L3 N
A E
L2 L5 L6
D1
C
D
M
U
F
H
123
L1
L4
P025C
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G
BUH615D
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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