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| (R) TN22 STARTLIGHT FEATURES VBR : 1200 - 1500V and 1000 - 1600V versions IH > 175 mA IGT < 1.5 mA SOT 194 (Plastic) DESCRIPTION The TN22 is an high performance asymetrical SCR in high voltage PNPN diffused planar technology. Package either in TO220AB, SOT 82 or SOT 194, these parts are intended for use in electronic ABSOLUTE RATINGS (limiting values) Symbol VDRM IT(RMS) IT(AV) ITSM Parameter Repetitive peak off-state voltage RMS on-state current Full sine ware (180 conductionangle) Mean on-state current Full sine ware (180 conductionangle) Non repetitive surge peak on-state current (Tj initial = 25C) I2t Value for fusing Critical rate of rise of on-state current IG = 5 mA dIG /dt = 70 mA/s. Storage and operating junction temperature range Maximum lead temperature for soldering during 10s at 4.5mm from case Tj = 110C Tc= 95C Tc= 95C tp = 8.3ms tp = 10ms I2 t dI/dt Tstg Tj Tl tp = 10ms Value 400 2 1.8 22 20 2 50 - 40 to + 150 - 40 to + 110 260 A2s A/s C C Unit V A A A K AG TO220AB (Plastic) SOT 82 (Plastic) April 1995 1/7 TN22 THERMAL RESISTANCES Symbol Rth(j-a) Junction to ambient Parameter TO220AB SOT 82 / SOT 194 Rth(j-c) Junction to case Value 60 100 3 C/W Unit C/W GATE CHARACTERISTICS (maximum values) PG (AV)= 300 mW PGM = 2 W (tp = 20 s) IFGM = 1 A (tp = 20 s) VRGM = 6V ELECTRICAL CHARACTERISTICS Symbol IGT VGT IH VTM IDRM dV/dt Test Conditions VD=12V (DC) RL=33 VD=12V (DC) RL=33 RGK = 1 K VGK = 0V ITM= 2A tp= 380s VDRM Rated Linear slope up to VD=67%VDRM VGK = 0V Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 25C Tj= 110C Type MAX MAX MIN MAX MAX MIN Value 1.5 3 175 3.1 0.1 500 Unit mA V mA V mA V/s Symbol Test Conditions Suffix TN22-1500 TN22-1600 1000 1600 Unit VBR ID= 5mA VGK = 0V Tj = 25C MIN MAX 1200 1500 V V ORDERING INFORMATION T THYRISTOR FAMILY N STARLIGHT 2 IT(RMS) MAX 2 :2 A 2 IGT MAX 2 : 1.5 mA - XXXX VBR MAX 1500 : 1500 V 1600 : 1600V X Packages T : TO220AB D : SOT 82 K : SOT 194 2/7 (R) TN22 This thyristor has been designed for use as a fluorescent tube starter switch. Au electronic starter circuit provides : BASIC APPLICATION DIAGRAM A pre-heating period during which a heating current is applied to the cathode heaters. One or several high voltage striking pulses across the lamp. INDUCTANCE BALLAST START ER CIRCUIT 220 V AV VOLTAGE FLUORESCENT TUBE R TN22 S CONTROLER (TIMER) PRINCIPLE OF OPERATION 1/ Pre-heating At rest the switch S is opened and when the mains voltage is applied across the circuit a full wave rectified current flows through the resistor R and the TN22 gate : At every half-cycle when this current reaches the gate triggering current (IGT) the thyristor turns on. When the device is turned-on the heating current, limited by the ballast choke, flows through the tube heaters. The pre-heating time is typically 2 or 3 seconds. 2/ Pulsing At the end of the pre-heating phase the switch S is turned on. At this moment : If the current through the devices is higher than the holding current (IH) the thyristor remains on until the current falls (below IH). Then the thyristor turns off. If the current is equal or lower than the holding current the thyristor turns off the instantaneously. When the thyristor turns off the current flowing through the ballas choke generates a high voltage pulse. This overvoltage is clamped by the thyristor avalanche characteristic (VBR). If the lamp is not struck after the first pulse, the system starts a new ignition sequence again. 3/ Steady state When the lamp is on the running voltage is about 150V and the starter switch is in the off-state. IMPLEMENTATION The resistor R must be chosen to ensure a proper triggering in the worst case (minimum operating temperature) according to the specified gate triggering current and the peak line voltage. Switch S : This function can be realized with a gate sensitive SCR type : P0130AA... This component is a low voltage device (< 50V) and the maximum current sink through this switch can reach the level of the thyristor holding current. The pre-heating period can be determined by the time constant of a capacitor-resistor circuit charged by the voltage drop of diodes used in series in the thyristor cathode. 3/7 (R) TN22 Fig.1 : Maximum average power dissipation versus average on-state current (rectified full sine wave). Fig.2 : Correlation between maximum average power dissipation and maximum allowable temperature (Tamb and Tcase) for different thermal resistances heatsink + contact. PT(av) (W) Rth=8 o C/W Rth=4 o C/W Rth=0 o C/W 6 5 4 3 2 1 0 P T(av) (W) = 180 = 120 = 90 o o 6 5 o Rth=12 oC/W 4 3 2 = 180 o = 60 = 30 o o I T(av) (A) 1 1.4 1.6 1.8 2 0 0.2 0.4 0.6 0.8 1 1.2 0 Tcase ( oC) 0 10 20 30 40 50 60 70 80 90 100 110 Fig.3 : Average on-state current versus case temperature (rectified full sine wave). Fig.4 : Thermal transient impedance junction to ambient versus pulse duration. I T(av) (A) Zth(j-a)(o C/W) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0.0 Tcas e ( C) o 1 .0E + 02 o = 180 1.0E + 01 1 .0E + 00 10 20 30 40 50 60 70 80 90 100 110 1.0E-01 1.0E-02 tp(S) 1.0E-01 1.0E +0 0 1.0E +01 1 .0E +02 1 .0E + 03 Fig.5 : Relative variation of gate trigger current and holding current versus junction temperature. Igt[Tj] o Igt[Tj=25 C] Ih[Tj] o Ih[Tj=25 C] Fig.6 : Non repetitive surge peak on-state current versus number of cycles. ITSM(A) 20 18 16 14 3.0 2.5 2.0 1.5 Ih Igt Tj initial = 25oC F = 50Hz 12 10 8 6 4 1.0 0.5 Tj(o C) 2 0 Number of cycles 1 10 100 1000 0.0 -40 -20 0 20 40 60 80 100 120 140 4/7 (R) TN22 Fig.7 : Non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of I2t. I TSM (A). I2 t (A2 s) 100 Tj initial = 25oC 8 7 6 5 10 4 3 I2 t 2 1 1 1 I TM (A) 10 0 0.1 1 10 20 Tj=25oC Tj=11 0 oC Vto =2.50V Rt =0.235 Tj=110 oC Fig.8 : On-state characteristics (maximum values). VTM (V) I TSM tp(ms) Fig.9 : Relative variation of holding current versus gate-cathode resistance (typical values). Fig.10 : Maximum allowable RMS current versus time conduction and initial case temperature (Package : SOT 82). Note : Calculation made fot Tj max = 135C (the failure mode will be short circuit) IT(rms) (A) Tc initial = 25oC 500 IH (mA) Tj=25o C 11 10 9 100 8 7 6 Tc initial = 45 oC 10 5 4 3 Rgk( ) 2 1000 Tc initial = 65 oC tp(s) 1 10 100 1 1 10 100 1 0.1 5/7 (R) TN22 PACKAGE MECHANICAL DATA TO220AB (Plastic) DIMENSIONS REF. A B C D E F G H I J K L M N N1 O P Cooling method : C Marking : Type number Weight : 2 g Millimeters Min. 10.0 15.2 13 6.2 Inches Min. 0.393 0.598 0.511 0.244 Max. 10.4 15.9 14 6.6* * Max. 0.409 0.626 0.551 0.260 16.4 typ. 3.5 2.65 4.4 3.75 1.23 4.2 2.95 4.6 3.85 1.32 0.645 typ. 0.137 0.104 0.173 0.147 0.048 0.165 0.116 0.181 0.151 0.051 1.27 typ. 0.49 2.4 4.95 2.40 1.14 0.61 0.70 2.72 5.15 2.70 1.70 0.88 0.050 typ. 0.019 0.094 0.194 0.094 0.044 0.024 0.027 0.107 0.203 0.106 0.067 0.034 Recommended torque values : 5.5 m.N. Maximum torque values : 0.70 m.N. PACKAGE MECHANICAL DATA SOT 82 (Plastic) C A DIMENSIONS REF. B Millimeters Min. Max. 7.8 10.8 2.7 0.9 7.4 10.5 2.4 0.7 Inches Min. 0.291 0.413 0.094 0.027 Max. 0.307 0.425 0.106 0.035 A B H C D E L 2.2 typ. 0.49 4.15 0.75 4.65 2.54 15.7 typ. 1.0 1.3 0.087 typ. 0.019 0.163 0.029 0.183 0.100 0.618 typ. 0.039 0.051 F G H (1) D M F E G L M (1) Within this region the cross-section of the leads is uncontrolled Marking : Type number Weight : 0.72 g 6/7 (R) TN22 PACKAGE MECHANICAL DATA SOT 194 (Plastic) REF. C A A DIMENSIONS Millimeters Inches Min. 7.4 10.5 2.4 0.7 Max. 7.8 10.8 2.7 0.9 Min. 0.291 0.413 0.094 0.027 Max. 0.307 0.425 0.106 0.035 B B C D M L D O E F G 2.2 typ. 0.49 4.15 0.75 4.65 0.087 typ. 0.019 0.163 0.020 0.183 N F I E G I L M N O 1.3 typ. 0.1 typ. 4 typ 2 typ. 6 typ. 45 0.051 typ. 0.004 typ. 0.158 typ 0.078 typ. 0.236 typ. 45 Marking : Type number Weight : 0.68 g FOOT PRINT 6.7 8.5 3.5 4.5 1.2 1 Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THO MSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectronics. (c) 1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved. SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A. 7/7 (R) |
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